Temperature-dependent current-voltage and lightsoaking measurements on Cu(In,Ga)Se2 solar cells with ALD-Zn1-x Mgx O buffer layers

2009 ◽  
Vol 17 (7) ◽  
pp. 460-469 ◽  
Author(s):  
J. Pettersson ◽  
C. Platzer-Björkman ◽  
M. Edoff
Keyword(s):  
Solar Cells ◽  
Buffer Layers ◽  
Temperature Dependent ◽  
Current Voltage

Variable Light Soaking Effect of Cu(In,Ga)Se2 Solar Cells with Conduction Band Offset Control of Window/Cu(In,Ga)Se2 Layers

2007 ◽  
Vol 1012 ◽  
Author(s):  
Takashi Minemoto ◽  
Yasuhiro Hashimoto ◽  
Takuya Satoh ◽  
Takayuki Negami ◽  
Hideyuki Takakura
Keyword(s):  
Solar Cells ◽  
Conduction Band ◽  
Buffer Layers ◽  
Window Layer ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Current Voltage ◽  
Variable Light ◽  
Cigs Solar Cells ◽  
The Impact

AbstractThe impact of the conduction band offset (CBO) between window/Cu(In,Ga)Se2 (CIGS) layers on the light soaking (LS) effect in CIGS solar cells has been studied with continuous CBO control using a (Zn,Mg)O (ZMO) window layer. Two types of CIGS solar cells with different window/buffer/absorber layers configurations were fabricated, i.e., ZMO/CIGS (without buffer layer) and ZMO/CdS/CIGS structures. The CBO values between ZMO and CIGS layers were controlled to -0.15~0.25 eV. Plus and minus signs of CBO indicate the conduction band minimums of ZMO above and below that of CIGS, respectively. Current-voltage (J-V) characteristics of the solar cells with different LS durations revealed that a positive CBO value higher than 0.16 eV induces J-V curve distortion, i.e., LS effect, and all the J-V characteristics stabilized in 30 min. The degrees of the LS effect were dominated by the CBO value between ZMO and CIGS layers in the both structure regardless of the existence of CdS buffer layers. These results indicate that the LS effect is dominated by the highest barrier for photo-generated electrons in the conduction band diagram, i.e., the CBO between ZMO and CIGS layers, and quantitatively the LS effect emerges the CBO value higher than 0.16 eV.

Solar Cells prepared with Spray-ILGAR Indium Sulfide buffer layers on Cu(In,Ga)Se2 Absorbers

2005 ◽  
Vol 865 ◽  
Author(s):  
Nicholas A. Allsop ◽  
Christian A. Kaufmann ◽  
Axel Neisser ◽  
Marin Rusu ◽  
Andreas Hänsel ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Space Charge ◽  
Cadmium Sulfide ◽  
Space Charge Region ◽  
Buffer Layers ◽  
Indium Sulfide ◽  
Recombination Mechanism ◽  
Current Voltage ◽  
First Results

AbstractIndium sulfide buffer layers deposited by the Spray-Ion Layer Gas Reaction (Spray-ILGAR) technique have recently been used with Cu(In,Ga)(S,Se)2 absorbers giving cells with an efficiency equal to the cadmium sulfide references. In this paper we show the first results from cells prepared with Cu(In,Ga)Se2 absorbers (sulfur free). These cells reach an efficiency of 13.1% which remains slightly below the efficiency of the cadmium sulfide reference. However, temperature dependant current-voltage measurements reveal that the activation energy of the dominant recombination mechanism remains unchanged from the cadmium sulfide buffered cells indicating that recombination remains within the space charge region.

An analysis of temperature dependent current–voltage characteristics of Cu2O–ZnO heterojunction solar cells

2011 ◽  
Vol 519 (19) ◽  
pp. 6613-6619 ◽  
Author(s):  
SeongHo Jeong ◽  
Sang Ho Song ◽  
Kushagra Nagaich ◽  
Stephen A. Campbell ◽  
Eray S. Aydil
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Heterojunction Solar Cells ◽  
Current Voltage ◽  
Current Voltage Characteristics

Temperature-Dependent Electroluminescence from CdTe/CdS Solar Cells

2003 ◽  
Vol 763 ◽  
Author(s):  
K. J. Price ◽  
A. Vasko ◽  
L. Gorrelland ◽  
A. D. Compaan
Keyword(s):  
Solar Cells ◽  
Temperature Dependent ◽  
Electron Hole ◽  
Cell Efficiency ◽  
Forward Current ◽  
Current Voltage ◽  
Power Law Function ◽  
Current Densities ◽  
Increasing Temperature ◽  
Hole Recombination

AbstractElectroluminescence (EL) from polycrystalline CdTe/CdS solar cells was studied over the temperature range – 30 C to 25 C. We are able to observe above-background EL at forward current densities as low as 3 mA/cm2, allowing us to explore the EL behavior at current-voltage regimes within the normal operating parameters of the device. The EL spectrum is very similar to the photoluminescence (PL) spectrum, and is independent of applied voltage. We show that the EL most likely originates from injected electron-hole recombination at the CdTe/CdS junction. The total EL intensity is found to vary as a power-law function of current, EL ∼ Ib, where I is the forward current density and b is a constant. The value of b varies from sample to sample and decreases with increasing temperature. EL intensity typically is much more sensitive to device deterioration with light soak stress than is cell efficiency.

Quantitative measurements of charge carrier hopping transport properties in depleted-heterojunction PbS colloidal quantum dot solar cells from temperature dependent current–voltage characteristics

RSC Advances ◽  
2016 ◽  
Vol 6 (95) ◽  
pp. 93180-93194 ◽  
Author(s):  
Andreas Mandelis ◽  
Lilei Hu ◽  
Jing Wang
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Charge Carrier ◽  
Temperature Dependent ◽  
Hopping Transport ◽  
Quantitative Measurements ◽  
Quantum Dot Solar Cells ◽  
Current Voltage ◽  
Colloidal Quantum Dot ◽  
Current Voltage Characteristics

Non-conventional (anomalous) current–voltage characteristics are reported with increasing frequency for colloidal quantum dot-based (CQD) solar cells.

Contactless and Spatially‐Resolved Determination of Current‐Voltage Curves in Perovskite Solar Cells via Photoluminescence

Solar RRL ◽  
2021 ◽  
Author(s):  
Anh Dinh Bui ◽  
Md Arafat Mahmud ◽  
Naeimeh Mozaffari ◽  
Rabin Basnet ◽  
The Duong ◽  
...  
Keyword(s):  
Solar Cells ◽  
Perovskite Solar Cells ◽  
Spatially Resolved ◽  
Current Voltage

scholarly journals Study and Assessment of Defect and Trap Effects on the Current Capabilities of a 4H-SiC-Based Power MOSFET

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 735
Author(s):  
Fortunato Pezzimenti ◽  
Hichem Bencherif ◽  
Giuseppe De Martino ◽  
Lakhdar Dehimi ◽  
Riccardo Carotenuto ◽  
...  
Keyword(s):  
Drain Current ◽  
Oxide Semiconductor ◽  
Temperature Dependent ◽  
Channel Mobility ◽  
Blocking Voltage ◽  
Current Voltage ◽  
Wide Range ◽  
Temperature Ranges ◽  
Joint Contribution ◽  
State Resistance

A numerical simulation study accounting for trap and defect effects on the current-voltage characteristics of a 4H-SiC-based power metal-oxide-semiconductor field effect transistor (MOSFET) is performed in a wide range of temperatures and bias conditions. In particular, the most penalizing native defects in the starting substrate (i.e., EH6/7 and Z1/2) as well as the fixed oxide trap concentration and the density of states (DoS) at the 4H-SiC/SiO2 interface are carefully taken into account. The temperature-dependent physics of the interface traps are considered in detail. Scattering phenomena related to the joint contribution of defects and traps shift the MOSFET threshold voltage, reduce the channel mobility, and penalize the device current capabilities. However, while the MOSFET on-state resistance (RON) tends to increase with scattering centers, the sensitivity of the drain current to the temperature decreases especially when the device is operating at a high gate voltage (VGS). Assuming the temperature ranges from 300 K to 573 K, RON is about 2.5 MΩ·µm2 for VGS > 16 V with a percentage variation ΔRON lower than 20%. The device is rated to perform a blocking voltage of 650 V.

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