DX-centers in CdTe and ZnTe Observed by Locally Sensitive Probe Atoms
Keyword(s):
AbstractHeavily In-doped CdTe and ZnTe crystals are investigated using perturbed γγ-angular correlation experiments. By means of characteristic electric field gradients, it is shown that in the Cd (Zn) poor regime, the compensation is governed by A-center formation. After annealing in Cd (Zn) rich atmosphere, the formation of DX-centers is observed and identified as the prevailing compensation mechanism in the Cd (Zn) rich regime.
1969 ◽
Vol 311
(1504)
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pp. 185-190
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1998 ◽
Vol 53
(6-7)
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pp. 349-354
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2010 ◽
Vol 22
(21)
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pp. 215501
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