DX-centers in CdTe and ZnTe Observed by Locally Sensitive Probe Atoms

2003 ◽  
Vol 763 ◽  
Author(s):  
S. Lany ◽  
H. Wolf ◽  
Th. Wichert

AbstractHeavily In-doped CdTe and ZnTe crystals are investigated using perturbed γγ-angular correlation experiments. By means of characteristic electric field gradients, it is shown that in the Cd (Zn) poor regime, the compensation is governed by A-center formation. After annealing in Cd (Zn) rich atmosphere, the formation of DX-centers is observed and identified as the prevailing compensation mechanism in the Cd (Zn) rich regime.

Perturbed differential angular correlation measurements were performed on the 133-482 keV γ -cascade of 181 Ta in synthetic and neutron irradiated polycrystalline Hf ( AA ) 4 sources. Evidence is presented showing occurrence of different crystalline sites in the two cases. The experimental data have been treated by means of a X 2 test. Electric field gradients and asymmetry parameters are evaluated and discussed in terms of possible crystalline structures.


1998 ◽  
Vol 53 (6-7) ◽  
pp. 349-354 ◽  
Author(s):  
P. Wodniecki ◽  
A. Kulińska ◽  
B. Wodniecka ◽  
A. Z. Hrynkiewicz

Abstract The quadrupole interaction in Au-In compounds of different stoichiometrics was studied with the perturbed angular correlation technique. The electric field gradients at 111Cd probes were measured and the temperature dependences of the quadrupole frequencies were determined. A new high temperature phase of Auln above 630 K and a new metastable modification of Au7In3 were found.


1989 ◽  
Vol 163 ◽  
Author(s):  
Th. Wichert ◽  
R. Keller ◽  
M. Deicher ◽  
W. Pfeiffer ◽  
H. Skudlik ◽  
...  

AbstractUsing the perturbed γγ angular correlation technique (PAC) the pairing of Cu with the radioactive acceptor atom 111In in Si is detected. Because of the identity of the electric field gradients the so-called X defect, observed after chemomechanical polishing of Si wafers and known of neutralizing acceptor atoms in Si, is identified as a Cu atom. It is also shown that as-delivered Si wafers already contain Cu atoms which neutralize acceptor atoms if the wafers are annealed at 1173 K.


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