Indications of the Interaction of Electric Field Gradients and Nuclear Electric Quadrupole Moments in Angular Correlation

1953 ◽  
Vol 90 (6) ◽  
pp. 1119-1119 ◽  
Author(s):  
Rolf M. Steffen

Perturbed differential angular correlation measurements were performed on the 133-482 keV γ -cascade of 181 Ta in synthetic and neutron irradiated polycrystalline Hf ( AA ) 4 sources. Evidence is presented showing occurrence of different crystalline sites in the two cases. The experimental data have been treated by means of a X 2 test. Electric field gradients and asymmetry parameters are evaluated and discussed in terms of possible crystalline structures.


1968 ◽  
Vol 46 (8) ◽  
pp. 923-927 ◽  
Author(s):  
Douglas L. Martin

Ordering reduces the nuclear, electronic, and lattice specific heats. The change in nuclear specific heat supports the hypothesis that this term in the specific heat arises from the interaction of nuclear electric quadrupole moments with electric field gradients in the disordered lattice. The small (3.5%) change in the electronic specific heat suggests little change in the Fermi surface on ordering. The change in the lattice specific heat is greater than expected from elastic constant measurements on ordered and disordered Cu3Au.


1998 ◽  
Vol 53 (6-7) ◽  
pp. 349-354 ◽  
Author(s):  
P. Wodniecki ◽  
A. Kulińska ◽  
B. Wodniecka ◽  
A. Z. Hrynkiewicz

Abstract The quadrupole interaction in Au-In compounds of different stoichiometrics was studied with the perturbed angular correlation technique. The electric field gradients at 111Cd probes were measured and the temperature dependences of the quadrupole frequencies were determined. A new high temperature phase of Auln above 630 K and a new metastable modification of Au7In3 were found.


1989 ◽  
Vol 163 ◽  
Author(s):  
Th. Wichert ◽  
R. Keller ◽  
M. Deicher ◽  
W. Pfeiffer ◽  
H. Skudlik ◽  
...  

AbstractUsing the perturbed γγ angular correlation technique (PAC) the pairing of Cu with the radioactive acceptor atom 111In in Si is detected. Because of the identity of the electric field gradients the so-called X defect, observed after chemomechanical polishing of Si wafers and known of neutralizing acceptor atoms in Si, is identified as a Cu atom. It is also shown that as-delivered Si wafers already contain Cu atoms which neutralize acceptor atoms if the wafers are annealed at 1173 K.


Sign in / Sign up

Export Citation Format

Share Document