Formation of In-Cu Pairs in Silicon During Chemomechanical Polishing

1989 ◽  
Vol 163 ◽  
Author(s):  
Th. Wichert ◽  
R. Keller ◽  
M. Deicher ◽  
W. Pfeiffer ◽  
H. Skudlik ◽  
...  
Keyword(s):  
Electric Field ◽  
Angular Correlation ◽  
Correlation Technique ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Acceptor Atom

AbstractUsing the perturbed γγ angular correlation technique (PAC) the pairing of Cu with the radioactive acceptor atom 111In in Si is detected. Because of the identity of the electric field gradients the so-called X defect, observed after chemomechanical polishing of Si wafers and known of neutralizing acceptor atoms in Si, is identified as a Cu atom. It is also shown that as-delivered Si wafers already contain Cu atoms which neutralize acceptor atoms if the wafers are annealed at 1173 K.

scholarly journals Electric Field Gradients at the In Site in Au-In Compounds

1998 ◽  
Vol 53 (6-7) ◽  
pp. 349-354 ◽  
Author(s):  
P. Wodniecki ◽  
A. Kulińska ◽  
B. Wodniecka ◽  
A. Z. Hrynkiewicz
Keyword(s):  
High Temperature ◽  
Electric Field ◽  
Angular Correlation ◽  
Perturbed Angular Correlation ◽  
High Temperature Phase ◽  
Correlation Technique ◽  
Temperature Phase ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Temperature Dependences

Abstract The quadrupole interaction in Au-In compounds of different stoichiometrics was studied with the perturbed angular correlation technique. The electric field gradients at 111Cd probes were measured and the temperature dependences of the quadrupole frequencies were determined. A new high temperature phase of Auln above 630 K and a new metastable modification of Au7In3 were found.

Tdpac-Studies of Electric Field Gradients in Amorphous Metallic Systems

1980 ◽  
Vol 3 ◽  
Author(s):  
P. Heubes ◽  
D. Korn ◽  
G. Schatz ◽  
G. Zibold
Keyword(s):  
Electric Field ◽  
Structural Model ◽  
Electric Field Gradient Tensor ◽  
Correlation Technique ◽  
Relative Width ◽  
Electric Field Gradients ◽  
Gradient Tensor ◽  
Field Gradients ◽  
Time Differential ◽  
Metallic Systems

ABSTRACTThe time differential perturbed γ-γ angular correlation technique (TDPAC) is applied to the amorphous metallic systems Ga, Bi, In50Au50 and In80Ag20. The electric field gradient tensor probed by 111Cd nuclei shows a broad probability distribution with a relative width of 0.4 – 0.5 for all systems, as suggested by a continuous random structural model.

Evidence of an after-effect in the ( n , γ ) reaction on polycrystalline hafnium (IV) acetyl-acetonate complex

1969 ◽  
Vol 311 (1504) ◽  
pp. 185-190 ◽  
Keyword(s):  
Experimental Data ◽  
Electric Field ◽  
Angular Correlation ◽  
Electric Field Gradients ◽  
Crystalline Structures ◽  
Field Gradients ◽  
After Effect ◽  
Asymmetry Parameters ◽  
Acetyl Acetonate

Perturbed differential angular correlation measurements were performed on the 133-482 keV γ -cascade of 181 Ta in synthetic and neutron irradiated polycrystalline Hf ( AA ) 4 sources. Evidence is presented showing occurrence of different crystalline sites in the two cases. The experimental data have been treated by means of a X 2 test. Electric field gradients and asymmetry parameters are evaluated and discussed in terms of possible crystalline structures.

Impurity Cationic-Site Population and Electric-Field Gradient Dependence on Ionic Size in Bixbyites Sesquioxides Implanted With 181Hf → 181Ta

1998 ◽  
Vol 12 (20) ◽  
pp. 819-827 ◽  
Author(s):  
M. Rentería ◽  
A. G. Bibiloni ◽  
F. G. Requejo ◽  
A. F. Pasquevich ◽  
J. Shitu ◽  
...  
Keyword(s):  
Electric Field ◽  
Perturbed Angular Correlation ◽  
Lattice Parameter ◽  
Correlation Technique ◽  
Electric Field Gradients ◽  
Field Gradients ◽  
Cationic Site ◽  
Small Lattice ◽  
Ionic Size ◽  
Site Population

The Perturbed-Angular-Correlation technique was used to study the impurity cationic-site population and electric-field gradients in scandium and samarium sesquioxides implanted with 181 Hf → 181 Ta . We found a departure of the tantalum (hafnium) relative occupancy of the crystallographic sites C and D in the bixbyite structure from the natural abundance of the sites, in the case of scandium sesquioxide, that could be explained in terms of the small lattice parameter of this sesquioxide. A similar behavior occurs in the case of indium sesquioxide. In the rest of the bixbyites measured with 181 Ta , f D /f C remains nearly constant and close to the crystallographic abundance, which is only reached in the case of Sm 2 O 3, the sesquioxide with the largest lattice parameter. Additionally, we confirm a jump in the values of νQ( Ta ) for sites C and D that takes place for a ≤ 1:012 nm, that is for lattice parameters smaller than that of ytterbium sesquioxide.

DX-centers in CdTe and ZnTe Observed by Locally Sensitive Probe Atoms

2003 ◽  
Vol 763 ◽  
Author(s):  
S. Lany ◽  
H. Wolf ◽  
Th. Wichert
Keyword(s):  
Electric Field ◽  
Angular Correlation ◽  
Compensation Mechanism ◽  
Electric Field Gradients ◽  
Dx Centers ◽  
Field Gradients

AbstractHeavily In-doped CdTe and ZnTe crystals are investigated using perturbed γγ-angular correlation experiments. By means of characteristic electric field gradients, it is shown that in the Cd (Zn) poor regime, the compensation is governed by A-center formation. After annealing in Cd (Zn) rich atmosphere, the formation of DX-centers is observed and identified as the prevailing compensation mechanism in the Cd (Zn) rich regime.

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