Temperature Dependence of Ion Mixing Of Markers in Zr

1986 ◽  
Vol 74 ◽  
Author(s):  
S. -J. Kim ◽  
M. -A. Nicolet ◽  
R. S. Averback
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Diffusion Theory ◽  
Irradiation Temperature ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion

AbstractIon mixing of thin markers in Zr was investigated by irradiating with 660 keV Kr++ ions at temperatures between 300 to 423 K. Very thin films of vacuum evaporated Ti, Cr, Fe, Co, Ni, Cu+ Hf, W, and Au served as markers. The samples were analyzed by 2 MeV He backscattering spectrometry. The marker elements that are likely to dissolve interstitially in Zr have higher mixing efficiencies at elevated irradiation temperature than the markers that are likely to dissolve substitutionally. The results are explained by radiation-enhanced diffusion theory.

Sink Strength Evolution of Heavy Ion Irradiated Nickel

1998 ◽  
Vol 540 ◽  
Author(s):  
P. Fielitz ◽  
M.-P. Macht ◽  
V. Naundorf ◽  
H. Wollenberger
Keyword(s):  
Ion Irradiation ◽  
Heavy Ion ◽  
Irradiation Temperature ◽  
Sink Strength ◽  
Enhanced Diffusion ◽  
Self Diffusion ◽  
Spatially Resolved ◽  
Radiation Enhanced Diffusion ◽  
Strength Evolution ◽  
Different Depths

AbstractAtom transport under irradiation is determined by the concentration of freely migrating defects, which depends on the dynamical equilibrium between production and annihilation rates. In order to determine effective values of both of these quantities for the case of ion irradiation, spatially resolved self-diffusion measurements were performed on single crystals of nickel which contained several thin tracer layers at different depths.For fixed depth the radiation-enhanced diffusion coefficient (DK) was determined as function of displacement rate (K0) and fluence (Φ). The DK essentially representing the ratio of the rates of production and annihilation was found to be proportional to K0 for 800 K irradiation temperature and to K00.4for Ni and K00.4for Kr irradiation at 950 K. It is independent of Φ for 800 K and decreases with increasing Φ for 950 K.

The Influence of Dose Rate on the Formation of CrSi2 by Ion Mixing

1987 ◽  
Vol 93 ◽  
Author(s):  
S.-J. Kim ◽  
D. N. Jamieson ◽  
M-A. Nicolet ◽  
R. S. Averback
Keyword(s):  
Growth Rate ◽  
Dose Rate ◽  
Ion Irradiation ◽  
Diffusion Theory ◽  
Layer Compound ◽  
Enhanced Diffusion ◽  
Silicide Layer ◽  
Radiation Enhanced Diffusion ◽  
Lower Dose Rate ◽  
The Relationship

ABSTRACTThe relationship between growth rate of CrSi2 and dose rate during Xe ion irradiation at 500K is investigated. Dose raies difffering by up to a factor of 40 have been utilized to study the relationship. For a fixed total dose, a lower dose rate results in a thicker silicide layer compound to a higher dose rate. The results are explained from radiation-enhanced diffusion theory.

The Effect of Atomic Mixing on the Depth Profiles of Metal Markers in Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
B. V. King ◽  
D. G. Tonn ◽  
I.S.T. Tsong ◽  
J. A. Leavitt
Keyword(s):  
Thin Film ◽  
Diffusion Theory ◽  
Diffusion Constant ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Mixing Effects ◽  
Radiation Enhanced Diffusion ◽  
Experimental Values ◽  
Atomic Mixing

ABSTRACTAtomic mixing effects of sputter depth-profiles are modeled by a diffusion theory with a depth-dependent diffusion constant D. The model is compared to SIMS depth profiles, using 5 keV Ar+ bombardment of dilute thin-film multilayers of Al, Ag, Ti and Mo in silicon. The experimental values of D can be explained by cascade mixing and radiation enhanced diffusion within the cascade for Al, Ag and Ti markers but not for the Mo marker.

scholarly journals Influence of the irradiation temperature on the intracascade ion mixing

1993 ◽  
Vol 8 (3) ◽  
pp. 449-454 ◽  
Author(s):  
M. Alurralde ◽  
A. Caro ◽  
M. Victoria
Keyword(s):  
Energy Deposition ◽  
Liquid Drop ◽  
Irradiation Temperature ◽  
Binary Collision ◽  
Liquid Drop Model ◽  
Good Qualitative Agreement ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Mixing Rates ◽  
Collision Approximation

We present a description of the thermal behavior of cascades in Cu and Ag over a large energy range and irradiation temperatures. For this purpose the binary collision approximation, which gives the profile of the energy deposition, is coupled to a simplified version of the heat equation. In the present calculations, the original liquid drop model [M. Alurralde, A. Caro, and M. Victoria, J. Nucl. Mater. 183, 33 (1991)] has been extended to the case where the lattice is at finite temperatures. The resulting evolution of the liquid cascade is analyzed for PKA energies up to 1 MeV, and the results are compared to experimental observations of mixing rates. We obtain a temperature dependence that adds to the traditional Radiation Enhanced Diffusion, RED, in very good qualitative agreement with experiments on materials showing thermal spikes.

Ion Beam Mixing of Ni-Ti Bilayered Thin Films

1985 ◽  
Vol 43 ◽  
pp. 290-291
Author(s):  
A. K. Rai ◽  
R. S. Bhattacharya ◽  
M. H. Rashid
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Amorphous Alloys ◽  
Ion Beam ◽  
Ion Bombardment ◽  
High Energy ◽  
Mixing Efficiency ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Binary Metal

Ion beam mixing has recently been found to be an effective method of producing amorphous alloys in the binary metal systems where the two original constituent metals are of different crystal structure. The mechanism of ion beam mixing are not well understood yet. Several mechanisms have been proposed to account for the observed mixing phenomena. The first mechanism is enhanced diffusion due to defects created by the incoming ions. Second is the cascade mixing mechanism for which the kinematicel collisional models exist in the literature. Third mechanism is thermal spikes. In the present work we have studied the mixing efficiency and ion beam induced amorphisation of Ni-Ti system under high energy ion bombardment and the results are compared with collisional models. We have employed plan and x-sectional veiw TEM and RBS techniques in the present work.

Temperature dependence of ZnO thin films grown on Si substrate

2007 ◽  
Vol 19 (8-9) ◽  
pp. 749-754 ◽  
Author(s):  
Y. Y. Kim ◽  
C. H. Ahn ◽  
S. W. Kang ◽  
B. H. Kong ◽  
S. K. Mohanta ◽  
...  
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Zno Thin Films ◽  
Si Substrate
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