The Effect of Atomic Mixing on the Depth Profiles of Metal Markers in Silicon

1983 ◽  
Vol 27 ◽  
Author(s):  
B. V. King ◽  
D. G. Tonn ◽  
I.S.T. Tsong ◽  
J. A. Leavitt
Keyword(s):  
Thin Film ◽  
Diffusion Theory ◽  
Diffusion Constant ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Mixing Effects ◽  
Radiation Enhanced Diffusion ◽  
Experimental Values ◽  
Atomic Mixing

ABSTRACTAtomic mixing effects of sputter depth-profiles are modeled by a diffusion theory with a depth-dependent diffusion constant D. The model is compared to SIMS depth profiles, using 5 keV Ar+ bombardment of dilute thin-film multilayers of Al, Ag, Ti and Mo in silicon. The experimental values of D can be explained by cascade mixing and radiation enhanced diffusion within the cascade for Al, Ag and Ti markers but not for the Mo marker.

Measurement of radiation-enhanced diffusion of La in single crystal thin film CeO2

2010 ◽  
Vol 405 (2) ◽  
pp. 118-125 ◽  
Author(s):  
Harrison K. Pappas ◽  
Brent J. Heuser ◽  
Melissa M. Strehle
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion

Diffusion Induced Grain Boundary Migration in Ion-Beam Mixed Fe-AL

1982 ◽  
Vol 40 ◽  
pp. 634-635 ◽  
Author(s):  
Shankara K. Prasad ◽  
Herbert Herman ◽  
Alexander H. King ◽  
Allen Goland
Keyword(s):  
Thin Film ◽  
Thin Layer ◽  
Boundary Migration ◽  
Ion Beam ◽  
Bulk Diffusion ◽  
Grain Boundary Migration ◽  
Recoil Implantation ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Mixed Layers

Ion beam intermixing is a newly investigated process wherein an ion beam is used to induce a reaction between a deposited thin layer and the substrate. The ion beam induced intermixing and microalloying at the interface can be due to three processes: 1. Recoil implantation 2. Cascade mixing 3. Radiation enhanced diffusion. Mixing due to recoil implantation has been studied by Nelson and was shown to result in very shallow mixed layers. However, in their recent investigation of Pt-Si, Pd-Si and Al-Ge and other systems, Tsaur et.al, have observed the formation of a thick surface alloy which is metastable in nature. They attribute this intermixing of the deposited thin film and the substrate, and the eventual "epitaxial" growth, to cascade overlap and radiation enhanced bulk diffusion. The present work provides evidence for the role played by grain boundaries in both intermixing and grain growth.

DIFFUSION IN METALS AND ALLOYS UNDER IRRADIATION

1992 ◽  
Vol 06 (18) ◽  
pp. 2925-2986 ◽  
Author(s):  
Volkmar Naundorf
Keyword(s):  
Point Defect ◽  
Metals And Alloys ◽  
Impurity Diffusion ◽  
Simultaneous Action ◽  
Experimental Investigations ◽  
Mixing Efficiency ◽  
Fundamental Parameters ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion ◽  
Atomic Mixing

Experimental investigations of the diffusion in crystalline metals and alloys under irradiation are reviewed emphasizing those experiments, in which atom transport was directly observed. Three types of results will be considered: (i) radiation-enhanced self- and impurity diffusion, (ii) segregation of components in homogeneous alloys, and (iii) the behaviour of thermodynamically (meta-) stable precipitates under the simultaneous action of radiation-enhanced diffusion and atomic mixing. The analysis of the experiments will be based on well known defect kinetics, using as fundamental parameters the fraction of freely migrating defects, the effective sink concentration for point defect annihilation, and the mixing efficiency.

The Influence of Dose Rate on the Formation of CrSi2 by Ion Mixing

1987 ◽  
Vol 93 ◽  
Author(s):  
S.-J. Kim ◽  
D. N. Jamieson ◽  
M-A. Nicolet ◽  
R. S. Averback
Keyword(s):  
Growth Rate ◽  
Dose Rate ◽  
Ion Irradiation ◽  
Diffusion Theory ◽  
Layer Compound ◽  
Enhanced Diffusion ◽  
Silicide Layer ◽  
Radiation Enhanced Diffusion ◽  
Lower Dose Rate ◽  
The Relationship

ABSTRACTThe relationship between growth rate of CrSi2 and dose rate during Xe ion irradiation at 500K is investigated. Dose raies difffering by up to a factor of 40 have been utilized to study the relationship. For a fixed total dose, a lower dose rate results in a thicker silicide layer compound to a higher dose rate. The results are explained from radiation-enhanced diffusion theory.

High Energy Ion Beam Mixing in Al2 O3

1983 ◽  
Vol 27 ◽  
Author(s):  
M. B. Lewis ◽  
C. J. Mchargue
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
High Energy ◽  
Binary Collision ◽  
Surface Layers ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Metal Atoms ◽  
Radiation Enhanced Diffusion

ABSTRACTThe ion beam mixing technique has been employed to mix metal atoms into the surface layers of Al2O3. Ion beams of Fe+ and Zr+ in the 1 to 4 MeV energy range were used to irradiate Al2O3 specimens on the surfaces of which films of chromium or zirconium had been evaporated. Some specimens were irradiated at elevated temperatures of 873 or 1173 K. Rutherford backscattering (RBS) and channeling methods were used to measure the metal atom depth profiles near the surface. Analyses of the backscattering data included binary collision calculations using the codes TRIM and MARLOWE. The significance and limitations of high energy (>1 MeV) beams for ion beam mixing experiments is discussed. Evidence was found for radiation enhanced diffusion and/or solubility of zirconium and chromium in Al2O3 at 873 K.

A Comparison of Atomic Mixing Behaviour of Cu- Au and Cu- W Systems for Room Temperature and Low Temperature Irradiation

1981 ◽  
Vol 7 ◽  
Author(s):  
Z.L. Wang ◽  
J.F.M. Westendorp ◽  
S. Doorn ◽  
F.W. Saris
Keyword(s):  
Ion Beam ◽  
Pronounced Difference ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Atomic Displacements ◽  
Radiation Enhanced Diffusion ◽  
Thermodynamic Conditions ◽  
Order Of Magnitude ◽  
Atomic Mixing ◽  
Mixing Behaviour

ABSTRACT300 keV Kr ion irradiations with doses varying from 2× 1015 to 2× 1016 at/cm2 have been applied to initiate mixing of Cu-Au and Cu-W systems. As under normal thermodynamic conditions the Cu-Au system is miscible whereas the Cu-W system is not, the comparison of both systems provides a test for the current theories on ion-beam mixing. A pronounced difference in mixing phenomena is observed for both systems; in the Cu-Au system atomic displacements are one order of magnitude larger than those in the Cu-W system. In addition, a drastic temperature dependence of ion-beam mixing in the Cu-Au system has been found. The mixing is suppressed by lowering the substrate temperature during irradiation. These results show that radiation enhanced diffusion is the mechanism underlying the ion-beam mixing of Cu and Au. Results for the Cu-W system are consistent with a collisional mixing model.

Temperature Dependence of Ion Mixing Of Markers in Zr

1986 ◽  
Vol 74 ◽  
Author(s):  
S. -J. Kim ◽  
M. -A. Nicolet ◽  
R. S. Averback
Keyword(s):  
Thin Films ◽  
Temperature Dependence ◽  
Diffusion Theory ◽  
Irradiation Temperature ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion

AbstractIon mixing of thin markers in Zr was investigated by irradiating with 660 keV Kr++ ions at temperatures between 300 to 423 K. Very thin films of vacuum evaporated Ti, Cr, Fe, Co, Ni, Cu+ Hf, W, and Au served as markers. The samples were analyzed by 2 MeV He backscattering spectrometry. The marker elements that are likely to dissolve interstitially in Zr have higher mixing efficiencies at elevated irradiation temperature than the markers that are likely to dissolve substitutionally. The results are explained by radiation-enhanced diffusion theory.

Effects of Concurrent Co or Ti Silicidation on Transient Diffusion and End-of-Range Damage in Phosphorus Implanted Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
J.W. Honeycutt ◽  
J. Ravi ◽  
G. A. Rozgonyi
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Complete Removal ◽  
Dislocation Loops ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Enhanced Dissolution ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Defect Behavior ◽  
Secondary Ion

ABSTRACTThe effects of Ti and Co silicidation on P+ ion implantation damage in Si have been investigated. After silicidation of unannealed 40 keV, 2×1015 cm-2 P+ implanted junctions by rapid thermal annealing at 900°C for 10–300 seconds, secondary ion mass spectrometry depth profiles of phosphorus in suicided and non-silicided junctions were compared. While non-silicided and TiSi2 suicided junctions exhibited equal amounts of transient enhanced diffusion behavior, the junction depths under COSi2 were significantly shallower. End-of-range interstitial dislocation loops in the same suicided and non-silicided junctions were studied by planview transmission electron microscopy. The loops were found to be stable after 900°C, 5 minute annealing in non-silicided material, and their formation was only slightly effected by TiSi2 or COSi2 silicidation. However, enhanced dissolution of the loops was observed under both TiSi2 and COSi2, with essentially complete removal of the defects under COSi2 after 5 minutes at 900°C. The observed diffusion and defect behavior strongly suggest that implantation damage induced excess interstitial concentrations are significantly reduced by the formation and presence of COSi2, and to a lesser extent by TiSi2. The observed time-dependent defect removal under the suicide films suggests that vacancy injection and/or interstitial absorption by the suicide film continues long after the suicide chemical reaction is complete.

The Study of the Interaction of the Components of Imitator-Glasses of Glassified Radioactive Wastes With Various Surrounding Rocks

1981 ◽  
Vol 6 ◽  
Author(s):  
V. I. Spitsyn ◽  
A. A. Minaev ◽  
L. I. Barsova ◽  
P. Ya. Glazunov ◽  
V. N. Vetchkanov
Keyword(s):  
Gamma Irradiation ◽  
High Temperatures ◽  
Phosphate Glass ◽  
Phosphate Glasses ◽  
Radioactive Wastes ◽  
X Ray ◽  
Enhanced Diffusion ◽  
Radiation Enhanced Diffusion

ABSTRACTThis work is one of the first attempts to work out a proper technique for the determination of the diffusion of the phosphate glass components into various rocks by using X-ray microanalysis. Under study was thermal and radiationenhanced diffusion of phosphorus, chromium from phosphate glasses into the samples of basalt, metagabbro, metadunite and quartz at high temperatures (to 600°) during gamma irradiation. Radiation enhanced diffusion of ions into rocks.

Sign in / Sign up

Export Citation Format

Share Document