Thermodynamic Stability of High-K Dielectric Metal Oxides ZrO2 and HfO2 in Contact with Si and SiO2

2002 ◽  
Vol 716 ◽  
Author(s):  
Maciej Gutowski ◽  
John E. Jaffe ◽  
Chun-Li Liu ◽  
Matt Stoker ◽  
Rama I. Hegde ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxides ◽  
Electron Micrographs ◽  
Thermodynamic Stability ◽  
Experimental Results ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
High K ◽  
High K Dielectric

AbstractWe present experimental results regarding the thermodynamic stability of the high-k dielectrics ZrO2 and HfO2 in contact with Si and SiO2. The HfO2/Si interface is found to be stable with respect to formation of silicides whereas the ZrO2/Si interface is not. The metal oxide/SiO2 interface is marginally unstable with respect to formation of silicates. Cross-sectional transmission electron micrographs expose formation of nodules, identified as silicides, across the polysilicon/ZrO2/Si interfaces but not for the interfaces with HfO2. For both ZrO2 and HfO2, the X-ray photoemission spectra illustrate formation of silicate-like compounds in the MO2/SiO2 interface.

Thermodynamic stability of high-K dielectric metal oxides ZrO2 and HfO2 in contact with Si and SiO2

2002 ◽  
Vol 80 (11) ◽  
pp. 1897-1899 ◽  
Author(s):  
Maciej Gutowski ◽  
John E. Jaffe ◽  
Chun-Li Liu ◽  
Matt Stoker ◽  
Rama I. Hegde ◽  
...  
Keyword(s):  
Metal Oxides ◽  
Thermodynamic Stability ◽  
High K ◽  
High K Dielectric

Direct Deposition Reactions Between Nickel and Silicon Substrates

1993 ◽  
Vol 311 ◽  
Author(s):  
Lin Zhang ◽  
Douglas G. Ivey
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Cross Sectional ◽  
Deposition Rates ◽  
Plan View ◽  
X Ray ◽  
Si Substrates ◽  
Transmission Electron

ABSTRACTSilicide formation through deposition of Ni onto hot Si substrates has been investigated. Ni was deposited onto <100> oriented Si wafers, which were heated up to 300°C, by e-beam evaporation under a vacuum of <2x10-6 Torr. The deposition rates were varied from 0.1 nm/s to 6 nm/s. The samples were then examined by both cross sectional and plan view transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy and electron diffraction. The experimental results are discussed in terms of a new kinetic model.

scholarly journals CO Oxidation over Metal Oxide (La2O3, Fe2O3, PrO2, Sm2O3, and MnO2) Doped CuO-Based Catalysts Supported on Mesoporous Ce0.8Zr0.2O2 with Intensified Low-Temperature Activity

Catalysts ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 724 ◽  
Author(s):  
Yan Cui ◽  
Leilei Xu ◽  
Mindong Chen ◽  
Chufei Lv ◽  
Xinbo Lian ◽  
...  
Keyword(s):  
Catalytic Activity ◽  
Low Temperature ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Co Oxidation ◽  
Active Sites ◽  
Earth Metal ◽  
High Dispersion ◽  
Impregnation Method ◽  
X Ray

CuO-based catalysts are usually used for CO oxidation owing to their low cost and excellent catalytic activities. In this study, a series of metal oxide (La2O3, Fe2O3, PrO2, Sm2O3, and MnO2)-doped CuO-based catalysts with mesoporous Ce0.8Zr0.2O2 support were simply prepared by the incipient impregnation method and used directly as catalysts for CO catalytic oxidation. These mesoporous catalysts were systematically characterized by X-ray powder diffraction (XRD), N2 physisorption, transmission electron microscopy (TEM), energy-dispersed spectroscopy (EDS) mapping, X-ray photoelectron spectroscopy (XPS), and H2 temperature programmed reduction (H2-TPR). It was found that the CuO and the dopants were highly dispersed among the mesoporous framework via the incipient impregnation method, and the strong metal framework interaction had been formed. The effects of the types of the dopants and the loading amounts of the dopants on the low-temperature catalytic performances were carefully studied. It was concluded that doped transition metal oxides could regulate the oxygen mobility and reduction ability of catalysts, further improving the catalytic activity. It was also found that the high dispersion of rare earth metal oxides (PrO2, Sm2O3) was able to prevent the thermal sintering and aggregation of CuO-based catalysts during the process of calcination. In addition, their presence also evidently improved the reducibility and significantly reduced the particle size of the CuO active sites for CO oxidation. The results demonstrated that the 15CuO-3Fe2O3/M-Ce80Zr20 catalyst with 3 wt. % of Fe2O3 showed the best low-temperature catalytic activity toward CO oxidation. Overall, the present Fe2O3-doped CuO-based catalysts with mesoporous nanocrystalline Ce0.8Zr0.2O2 solid solution as support were considered a promising series of catalysts for low-temperature CO oxidation.

scholarly journals High-K dielectric sulfur-selenium alloys

2019 ◽  
Vol 5 (5) ◽  
pp. eaau9785 ◽  
Author(s):  
Sandhya Susarla ◽  
Thierry Tsafack ◽  
Peter Samora Owuor ◽  
Anand B. Puthirath ◽  
Jordan A. Hachtel ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Metal Oxides ◽  
High Dielectric Constant ◽  
Dielectric Material ◽  
Dielectric Strength ◽  
Dielectric Materials ◽  
High K ◽  
Device Applications ◽  
High K Dielectric ◽  
High Dielectric

Upcoming advancements in flexible technology require mechanically compliant dielectric materials. Current dielectrics have either high dielectric constant, K (e.g., metal oxides) or good flexibility (e.g., polymers). Here, we achieve a golden mean of these properties and obtain a lightweight, viscoelastic, high-K dielectric material by combining two nonpolar, brittle constituents, namely, sulfur (S) and selenium (Se). This S-Se alloy retains polymer-like mechanical flexibility along with a dielectric strength (40 kV/mm) and a high dielectric constant (K = 74 at 1 MHz) similar to those of established metal oxides. Our theoretical model suggests that the principal reason is the strong dipole moment generated due to the unique structural orientation between S and Se atoms. The S-Se alloys can bridge the chasm between mechanically soft and high-K dielectric materials toward several flexible device applications.

scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Crystallization of Germanium-Carbon Alloys - Structure and Electronic Transport

1997 ◽  
Vol 467 ◽  
Author(s):  
T.-M. John ◽  
J. Bläsing ◽  
P. Veit ◽  
T. Drüsedau
Keyword(s):  
Electron Microscopy ◽  
Crystallite Size ◽  
Electronic Transport ◽  
Cluster Formation ◽  
Electronic Conductivity ◽  
Rf Magnetron Sputtering ◽  
Cross Sectional ◽  
Structural Investigations ◽  
X Ray ◽  
Transmission Electron

ABSTRACTAmorphous Ge1-xCx alloys were deposited by rf-magnetron sputtering from a germanium target in methane-argon atmosphere. Structural investigations were performed by means of wide and small angle X-ray scattering, X-ray reflectometry and cross-sectional transmission electron microscopy. The electronic transport properties were characterized using Hall-measurements and temperature depended conductivity. The results of X-ray techniques together with the electron microscopy clearly proof the existence of a segregation of the components and cluster formation already during deposition. The temperature dependence of the electronic conductivity in the as-prepared films follows the Mott' T−1/4 law, indicating transport by a hopping process. After annealing at 870 K, samples with x≤0.4 show crystallization of the Ge-clusters with a crystallite size being a function of x. After Ge-crystallization, the conductivity increases by 4 to 5 orders of magnitude. Above room temperature, electronic transport is determined by a thermally activated process. For lower temperatures, the σ(T) curves show a behaviour which is determined by the crystallite size and the free carrier concentration, both depending on the carbon content.

Application of Nanometer Metal Oxides in Infrared Ray Shielding Transparent Thin Film

2011 ◽  
Vol 474-476 ◽  
pp. 195-199 ◽  
Author(s):  
Ai Hong Guo ◽  
Xue Jiao Tang ◽  
Su Juan Zhang
Keyword(s):  
Thin Film ◽  
Metal Oxide ◽  
Metal Oxides ◽  
Sol Gel ◽  
Volume Ratio ◽  
Experimental Results ◽  
Mass Ratio ◽  
Gel Method ◽  
Water Based ◽  
Better Than

Water-based infrared ray shielding coating, that is, nanometer metal oxide is added to the water-based paint, which has anti-IR features without affecting the transparency of the paint. In this paper, the nanometer oxides are prepared by sol-gel method, added into polypropylene sour. In order to improve the infrared ray shielding of the thin film, two kinds of nanometer oxides are added into the polypropylene sour with different volume ratios, the shielding performance of the paint is studied. Experimental results show: in the 8000 ~ 4000cm-1 range, the transmittances of infrared ray is 30% to 75%; in 4000 ~ 400cm-1 range, transmittances decrease significantly; 3% ZnO, 3% Fe2O3, 3% Y2O3, 2% Al2O3 are the best mass ratio of every single nanometer oxide; the infrared shielding rate of Fe2O3 and Y2O3 mixture with the volume ratio of 1 to 4 is better than Fe2O3 and Y2O3 single.

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