scholarly journals The Reliability Improvement of Cu Interconnection by the Control of Crystallizedα-Ta/TaNxDiffusion Barrier

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
Wei-Lin Wang ◽  
Chia-Ti Wang ◽  
Wei-Chun Chen ◽  
Kuo-Tzu Peng ◽  
Ming-Hsin Yeh ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Practical Application ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Reliability Improvement ◽  
N Concentration ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Interconnection Structure

Ta/TaN bilayers have been deposited by a commercial self-ionized plasma (SIP) system. The microstructures of Ta/TaN bilayers have been systematically characterized by X-ray diffraction patterns and cross-sectional transmission electron microscopy. TaN films deposited by SIP system are amorphous. The crystalline behavior of Ta film can be controlled by the N concentration of underlying TaN film. On amorphous TaN film with low N concentration, overdeposited Ta film is the mixture ofα- andβ-phases with amorphous-like structure. Increasing the N concentration of amorphous TaN underlayer successfully leads upper Ta film to form pureα-phase. For the practical application, the electrical property and reliability of Cu interconnection structure have been investigated by utilizing various types of Ta/TaN diffusion barrier. The diffusion barrier fabricated by the combination of crystallizedα-Ta and TaN with high N concentration efficiently reduces the KRc and improves the EM resistance of Cu interconnection structure.

Microstructural study of MBE-grown ZnO film on GaN/sapphire (0001) substrate

Open Physics ◽  
2008 ◽  
Vol 6 (3) ◽  
Author(s):  
Hua Li ◽  
Jianping Sang ◽  
Chang Liu ◽  
Hongbing Lu ◽  
Juncheng Cao
Keyword(s):  
Interface Layer ◽  
Interfacial Microstructure ◽  
X Ray Diffraction ◽  
Zno Film ◽  
Epitaxial Relationship ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Gan Heterostructure

AbstractSingle crystalline ZnO film is grown on GaN/sapphire (0001) substrate by molecular beam epitaxy. Ga2O3 is introduced into the ZnO/GaN heterostructure intentionally by oxygen-plasma pre-exposure on the GaN surface prior to ZnO growth. The crystalline orientation and interfacial microstructure are characterized by X-ray diffraction and transmission electron microscopy. X-ray diffraction analysis shows strong c-axis preferred orientation of the ZnO film. Cross-sectional transmission electron microscope images reveal that an additional phase is formed at the interface of ZnO/GaN. Through a comparison of diffraction patterns, we confirm that the interface layer is monoclinic Ga2O3 and the main epitaxial relationship should be $$ (0001)_{ZnO} \parallel (001)_{Ga_2 O_3 } \parallel (0001)_{GaN} $$ and $$ [2 - 1 - 10]_{ZnO} \parallel [010]_{Ga_2 O_3 } \parallel [2 - 1 - 10]_{GaN} $$.

Microstructural Studies of Sputtered Co90Fe10/Ag GMR Multilayers

1997 ◽  
Vol 475 ◽  
Author(s):  
J.D. Jarratt ◽  
T.J. Klemmer ◽  
J.A. Barnard
Keyword(s):  
Multilayer Films ◽  
X Ray Diffraction ◽  
Satellite Peak ◽  
Cross Sectional ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Columnar Grains ◽  
Diffraction Patterns ◽  
Microstructural Studies

ABSTRACTThe microstructure of Co90Feio/Ag giant magnetoresistive multilayer films has been investigated using x-ray diffraction (XRD) and cross-sectional transmission electron microscopy. Columnar grains with a (111) fiber growth texture is observed. A comparison is made between the observed layering structure and earlier multilayer schematics based on the literature and magnetic and magnetoresistive measurements as a function of layer thickness. A direct correlation is made between superlattice satellite peak signals from selected area electron diffraction patterns and XRD scans.

Tem Investigation of Growth Temperature Dependence in Pulsed-Laser Ablated PLZT Films for Pyroelectric Applications

1999 ◽  
Vol 596 ◽  
Author(s):  
R. N. Jacobs ◽  
R. P. Godfrey ◽  
W. L. Sarney ◽  
C. W. Tipton ◽  
L. Salamanca-Riba
Keyword(s):  
Growth Temperature ◽  
Deposition Temperature ◽  
Structural Characteristics ◽  
Pulsed Laser ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Domain Orientation ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractTransmission electron microscopy is used to examine the structural characteristics of Pb0.9La0.1Zr0.2Ti0.8O3 (PLZT) films grown directly on single crystal LaAlO3 (LAO) substrates. In particular, the domain orientation and film epitaxial quality as a function of substrate deposition temperature are obtained in the range 500–650°C and compared to x-ray diffraction results. High-resolution cross sectional images and electron diffraction patterns confirm that domain orientation and overall epitaxial quality can be optimized with growth temperature. In addition, these results show a direct correlation with pyroelectric measurements obtained for capacitor structures incorporating La1−xSrxCoO3 (LSCO) top and bottom electrodes.

Characterization of Tib2/TISI2 Bilayer Structure Deposited by Sputtering

1995 ◽  
Vol 402 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg
Keyword(s):  
Diffusion Barrier ◽  
Photoelectron Spectroscopy ◽  
Effective Diffusion ◽  
Barrier Properties ◽  
Titanium Boride ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Structural And Electrical Properties

AbstractBilayer of TiB2/TiSi2 was deposited by magnetron co-sputtering on silicon and alumina substrates, and this structure was investigated for structural and electrical properties. Substrate bias and annealing in vacuum have been applied to vary the film properties. X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (XTEM) were used to characterize the structure, and chemical composition was characterized by Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS). Resistivity was measured by four probe method. Diffusion barrier properties were studied by AES. As deposited films are amorphous with resistivities of about 40 μΩcm. Post deposition annealing in vacuum shows that the amorphous titanium boride film is very stable. Crystallization starts above 1000°C as seen by XRD, and the crystallization temperature depends on the thickness of TiB2. TiSi2 C54 forms in the temperature range 586°C - 922°C, when TiB2 still remains in amorphous form. The TiSi2 sublayer serves as an additional effective diffusion barrier, preventing outdiffusion of boron from TiB2 into the Si substrate.

Cetyltrimethylammonium bromide- and ethylene glycol-assisted preparation of mono-dispersed indium oxide nanoparticles using hydrothermal method

2014 ◽  
Vol 68 (8) ◽  
Author(s):  
Selvakumar Dhanasingh ◽  
Dharmaraj Nallasamy ◽  
Saravanan Padmanapan ◽  
Vinod Padaki
Keyword(s):  
Ethylene Glycol ◽  
Hydrothermal Method ◽  
Indium Oxide ◽  
Cetyltrimethylammonium Bromide ◽  
Oxide Nanoparticles ◽  
X Ray Diffraction ◽  
Hydrothermal Conditions ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns

AbstractThe influence of cetyltrimethylammonium bromide and ethylene glycol on the size and dispersion of indium oxide nanoparticles prepared under hydrothermal conditions was investigated. The precursor compound, indium hydroxide, obtained by the hydrothermal method in the absence as well as the presence of cetyltrimethylammonium bromide, was converted to indium oxide by sintering at 400°C. The formation of nanoscale indium oxide upon sintering was ascertained by the characteristic infrared adsorption bands and X-ray diffraction patterns of indium oxide. Transmission electron microscopy and band gap values confirmed that the cetyltrimethylammonium bromide facilitated the formation of indium oxide nanoparticles smaller in size and narrower in distribution than those prepared without the assistance of cetyltrimethylammonium bromide.

Facile Refluxing Synthesis of Hydroxyapatite Nanoparticles

2015 ◽  
Vol 68 (8) ◽  
pp. 1293 ◽  
Author(s):  
Pakvipar Chaopanich ◽  
Punnama Siriphannon
Keyword(s):  
Crystallite Size ◽  
Reaction Times ◽  
Single Step ◽  
Hydroxyapatite Nanoparticles ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Aqueous Mixture ◽  
Diffraction Patterns ◽  
Microscopy Images

Hydroxyapatite (HAp) nanoparticles were successfully synthesized from an aqueous mixture of Ca(NO3)2·4H2O and (NH4)2HPO4 by a facile single-step refluxing method using polystyrene sulfonate (PSS) as a template. The effects of reaction times, pH, and PSS concentration on the HAp formation were investigated. It was found that the crystalline HAp was obtained under all conditions after refluxing the precursors for 3 and 6 h. The longer refluxing time, the greater the crystallinity and the larger the crystallite size of the HAp nanoparticles. The HAp with poor crystallinity was obtained at pH 8.5; however, the well-crystallized HAp was obtained when reaction pH was increased to 9.5 and 10.5. In addition, the X-ray diffraction patterns revealed that the presence of PSS template caused the reduction of HAp crystallite size along the (002) plane from 52.6 nm of non-template HAp to 43.4 nm and 41.4 nm of HAp with 0.05 and 0.2 wt-% PSS template, respectively. Transmission electron microscopy images of the synthesized HAp revealed the rod-shaped crystals of all samples. The synthesized HAp nanoparticles were modified by l-aspartic acid (Asp) and l-arginine (Arg), having negative and positive charges, respectively. It was found that the zeta potential of HAp was significantly changed from +5.46 to –24.70 mV after modification with Asp, whereas it was +4.72 mV in the Arg-modified HAp. These results suggested that the negatively charged amino acid was preferentially adsorbed onto the synthesized HAp surface.

A Chemical Solution Route to Rapid Synthesis of Homogeneous Bi100−xSbx Alloys Nanoparticles at Room Temperature

2007 ◽  
Vol 7 (2) ◽  
pp. 525-529 ◽  
Author(s):  
Bo Zhou ◽  
Jun-Jie Zhu
Keyword(s):  
Room Temperature ◽  
Raw Materials ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Solution Route ◽  
Diffraction Patterns ◽  
Co Reduction ◽  
Chemical Solution Route

A chemical co-reduction route in aqueous solution was developed to synthesize Bi100−xSbx alloys at room temperature. The hydrolyses of Bi(III) and Sb(III) were effectively avoided by selecting proper raw materials and coordinator. X-ray diffraction analysis indicated that the as-prepared Bi100−xSbx alloys were homogeneous and phase-pure, and the Bi/Sb ratios in the alloys were very close to those in the aqueous solutions. The transmission electron microscope observation showed that the as-prepared Bi100−xSbx (x = 0∼100) alloys were particles with a size of tens of nanometers. The selected area electron diffraction patterns confirmed the high crystallinity, the homogeneousness, and the composition controllability of as-prepared alloys. All these characters and the nanometer-scaled size of the alloys are believed to be beneficial to the thermoelectric property of the Bi100−xSbx alloys.

Millable Polyurethane/Organoclay Nanocomposites: Preparation, Characterization, and Properties

2007 ◽  
Vol 7 (2) ◽  
pp. 634-640 ◽  
Author(s):  
M. Siliani ◽  
M. A. López-Manchado ◽  
J. L. Valentín ◽  
M. Arroyo ◽  
A. Marcos ◽  
...  
Keyword(s):  
Barrier Properties ◽  
Substantial Improvement ◽  
Nanometer Scale ◽  
X Ray Diffraction ◽  
Transformation Techniques ◽  
Covalent Bonds ◽  
X Ray ◽  
Transmission Electron ◽  
Organically Modified ◽  
Diffraction Patterns

Novel millable polyurethane (PU)/organoclay nanocomposites have been successfully prepared by conventional transformation techniques. One natural (C6A) and two organically modified (C15A and C30B) montmorillonites have been used as clays for preparing PU nanocomposites. The optimum dispersion of nanofiller at a nanometer scale in PU matrix was confirmed by X-ray diffraction patterns and transmission electron microscopy. A substantial improvement of the PU properties by addition of only a small amount of organoclay was observed. It is worthy to note that the organoclays show a different interfacial interaction with the PU matrix, which was reflected in different macroscopic properties. Thus, C30B organoclay seems to react with PU chains to form covalent bonds, while C15Aonly interacts physically with PU chains. Mechanical and barrier properties are analyzed.

Homogeneity in the Polyether Alkoxide Sol‐Gel Synthesis of YBa2Cu3O7-δ

1994 ◽  
Vol 346 ◽  
Author(s):  
Carol S. Houk ◽  
Gary A. Burgoine ◽  
Catherine J. Page
Keyword(s):  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Diffraction Patterns ◽  
Mapping Techniques ◽  
Starting Solutions ◽  
Average Size ◽  
Sol Gel Synthesis ◽  
Elemental Maps

ABSTRACTWe have investigated the homogeneity of sol‐gel derived YBa2Cu307‐s from the solution phase to the final product using transmission electron microscopy (TEM), x‐ray diffraction (XRD), and Energy Dispersive X‐ray (EDX) lateral mapping techniques. The starting solutions contain stoichiometric amounts of the metal 2‐(2‐methoxyethoxy)ethoxide components in 2‐(2‐methoxyethoxy)ethanol and appear to be homogeneous by TEM with a uniform distribution of particles having an average size of less than 40 â. Through elemental mapping we see elemental segregation in the high temperature (950 °C) products, which are orthorhombic by XRD. In elemental maps of gel samples fired to 700 °C, which are tetragonal by XRD, we also see elemental inhomogeneity within particles and phase zoning in maps of products from finely ground gels. A comparison of elemental maps and x‐ray diffraction patterns of the products from gel processing and conventional solid state processing is made.

Evolution of Epitaxial SixGei1-x Alloys on Si(100) During Thermal Annealing a-Ge/Au Bilayers Deposited on Si Substrate

1992 ◽  
Vol 280 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen
Keyword(s):  
Single Crystal ◽  
Thermal Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Solid Phase ◽  
Growth Dynamics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

ABSTRACTSolid phase epitaxial (SPE) growth of SixGei1-x alloys on Si (100) was achieved by thermal annealing a-Ge/Au bilayers deposited on single crystal Si substrate in the temperature range of 280°C to 310°C. Growth dynamics was investigated using X-ray diffraction, Rutherford backscattering spectrometry, and cross-sectional transmission electron microscopy. Upon annealing, Ge atoms migrate along the grain boundaries of polycrystalline Au and the epitaxial growth initiates at localized triple points between two Au grains and Si substrate, simultaneously incorporating a small amount of Si dissolved in Au. The Au is gradually displaced into the top Ge layer. Individual single crystal SixGei1-x islands then grow laterally as well as vertically. Finally, the islands coalesce to form a uniform layer of epitaxial SixGe1-x alloy on the Si substrate. The amount of Si incorporated in the final epitaxial film was found to be dependent upon the annealing temperature.

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