scholarly journals Large-Area Pulsed Laser Deposition of Silicon Carbide Films

2002 ◽  
Vol 715 ◽  
Author(s):  
D. Yang ◽  
L. Xue ◽  
C. M. Mccague ◽  
P. R. Norton ◽  
C. S. Zhang
Keyword(s):  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Index Of Refraction ◽  
Laser Deposition ◽  
Large Area ◽  
Force Microscopy ◽  
Wide Range ◽  
Krf Excimer Laser ◽  
Amorphous Sic

AbstractSilicon carbide (SiC) thin films are attractive for a wide range of applications ranging from microelectronic and opto-electronic devices to protective and tribological coatings. In this paper, we will demonstrate that silicon carbide films can be successfully deposited by pulsed laser deposition (PLD) technique over large areas, with good uniformity in thickness, composition, and film-specific properties.Amorphous SiC films were grown on silicon wafers of 75-mm diameter over a temperature range of 25 – 650°C using a KrF excimer laser at a wavelength 248 nm and a repetition rate of 100 Hz. The large-area uniform coverage was obtained by rastering the laser beam over the radius of a rotating SiC target of 90-mm diameter, while the substrate was rotated simultaneously. The uniformity of film composition over the 75-mm wafers was characterized by Auger electron spectroscopy (AES), while the crystallinity of films was investigated by X-ray diffraction (XRD). The morphology of the films was evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thickness of the coatings, and the index of refraction, n, along the wafer radii were measured optically using a spectrophotometer.

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

2014 ◽  
Vol 32 (4) ◽  
pp. 541-546 ◽  
Author(s):  
P. Nagaraju ◽  
Y. Vijayakumar ◽  
D. Phase ◽  
V. Reddy ◽  
M. Ramana Reddy
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Krf Excimer Laser

AbstractMicrostructural properties of Ce1-x GdxO2-δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

Large-Area Pulsed Laser Deposition of Tantalum Oxide Films

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Boughaba ◽  
M. U. Islam ◽  
G. I. Sproule ◽  
M. J. Graham
Keyword(s):  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Large Area ◽  
Composition Structure ◽  
Krf Excimer Laser

ABSTRACTA large-area pulsed laser deposition (PLD) technique was used to uniformly grow tantalum pentoxide (Ta2O5) films on silicon wafers of 75 mm diameter. A KrF excimer laser beam was focused onto a 90 mm diameter Ta2O5 target to induce its ablation in oxygen gas ambient. The large-area coverage was obtained by rastering the laser beam over the radius of the rotating target, while the substrate was rotated simultaneously.The tantalum oxide films were characterized in terms of uniformity of thickness, composition, structure, and optical properties across the substrate. Average deviations typically below 1% were achieved in thickness, composition, indices of refraction and optical energy band-gap. Identical X-ray diffraction spectra were obtained at the center, middle of radius and edge of the wafers.

scholarly journals Synthesis of Samarium Oxide Films by Pulsed Laser Deposition

2003 ◽  
Vol 780 ◽  
Author(s):  
Dongfang Yang ◽  
Lijue Xue
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Index Of Refraction ◽  
Laser Deposition ◽  
Monoclinic Structure ◽  
Samarium Oxide ◽  
Structure Surface ◽  
Krf Excimer Laser

AbstractUniform Samarium oxide (Sm203) films were grown on 75-mm diameter silicon wafers by the pulsed laser deposition (PLD) technique. The beam of a KrF excimer laser was used to ablate an Sm2O3 target in an oxygen pressure of 30 mTorr. The crystal structure, surface morphology and optical properties of Sm2O3 films deposited at a temperature range of 25∼680°C were determined by XRD, FE-SEM, and spectra reflectance respectively. Monoclinic structure was the predominant phase for Sm2O3 films deposited at temperatures of 680°C and 400°C. Amorphous or partially crystallized amorphous phase was observed at deposition temperatures of 25°C and 200°C. The Sm2O3 film deposited at 680°C is very dense, while films deposited at lower temperatures have higher porosity. The values of index of refraction, n, and extinction coefficient, k, at λ = 633 nm are 1.867 and 0.0660, respectively, for the 680°C film, and are in a range of 1.5∼1.6 and 0.01∼0.04 respectively for films deposited at lower temperatures.

Pulsed laser deposition of oriented V2O5 thin films

2000 ◽  
Vol 15 (10) ◽  
pp. 2249-2265 ◽  
Author(s):  
Jeanne M. McGraw ◽  
John D. Perkins ◽  
Falah Hasoon ◽  
Philip A. Parilla ◽  
Chollada Warmsingh ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Glass Substrates ◽  
Wide Range ◽  
Phase Pure ◽  
Amorphous Quartz ◽  
Quartz Substrates

We have found that by varying only the substrate temperature and oxygen pressure five different crystallographic orientations of V2O5 thin films can be grown, ranging from amorphous to highly textured crystalline. Dense, phase-pure V2O5 thin films were grown on SnO2/glass substrates and amorphous quartz substrates by pulsed laser deposition over a wide range of temperatures and oxygen pressures. The films' microstructure, crystallinity, and texturing were characterized by electron microscopy, x-ray diffraction, and Raman spectroscopy. Temperature and oxygen pressure appeared to play more significant roles in the resulting crystallographic texture than did the choice of substrate. A growth map summarizes the results and delineates the temperature and O2 pressure window for growing dense, uniform, phase-pure V2O5 films.

scholarly journals Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

2010 ◽  
Vol 2010 ◽  
pp. 1-27 ◽  
Author(s):  
Michael Lorenz ◽  
Holger Hochmuth ◽  
Christoph Grüner ◽  
Helena Hilmer ◽  
Alexander Lajn ◽  
...  
Keyword(s):  
Thin Film ◽  
Dislocation Density ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Laser Deposition ◽  
Oxide Thin Film ◽  
Organic Chemical ◽  
Large Area ◽  
Low Dislocation Density

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.

scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Absorption Coefficient ◽  
Pulsed Laser Deposition ◽  
Extinction Coefficient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cutoff Wavelength ◽  
Nanostructured Silicon

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

Epitaxial Bi-layered perovskite ferroelectric thin film heterostructures by large area pulsed laser deposition

1999 ◽  
Vol 225 (1) ◽  
pp. 201-220 ◽  
Author(s):  
A. Pignolet ◽  
M. Alexe ◽  
K. M. Satyalakshmi ◽  
St. Senz ◽  
D. Hesse ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Film ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Large Area

Pulsed Laser Deposition of Superconductor/Ferromagnetic YBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 Heterostructures

1999 ◽  
Vol 574 ◽  
Author(s):  
V. Trtík ◽  
F. Sánchez ◽  
C. Ferrater ◽  
M. Varela ◽  
L. Fábrega ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Complete Analysis ◽  
Force Microscopy ◽  
Atomic Force ◽  
Strip Geometry ◽  
Droplet Density ◽  
Scanning Electron ◽  
Deposition Conditions

AbstractYBa2Cu3Oy/SrTiO3/La2/3Sr1/3MnO3 heterostructures have been deposited on LaAlO3(001) and SrTiO3(001) substrates by pulsed laser deposition. First, the influence of deposition conditions on crystallinity and morphology of single LSMO films was examined. Results were used for preparation of heterostructures in tri-layer and cross-strip geometry. Cross-strip geometry was defined by direct shadow mask patterning. Different characterization techniques have been used to determine and correlate the heterostructure properties. A complete analysis of the crystal structure has been carried out with a four-circle difractometer. Morphology has been studied by scanning electron microscopy and atomic force microscopy in order to determine surface roughness and droplet density. Basic electrical properties of films have been determined.

Sign in / Sign up

Export Citation Format

Share Document