Large-Area Pulsed Laser Deposition of Tantalum Oxide Films

1999 ◽  
Vol 567 ◽  
Author(s):  
S. Boughaba ◽  
M. U. Islam ◽  
G. I. Sproule ◽  
M. J. Graham
Keyword(s):  
Laser Beam ◽  
Pulsed Laser Deposition ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Large Area ◽  
Composition Structure ◽  
Krf Excimer Laser

ABSTRACTA large-area pulsed laser deposition (PLD) technique was used to uniformly grow tantalum pentoxide (Ta2O5) films on silicon wafers of 75 mm diameter. A KrF excimer laser beam was focused onto a 90 mm diameter Ta2O5 target to induce its ablation in oxygen gas ambient. The large-area coverage was obtained by rastering the laser beam over the radius of the rotating target, while the substrate was rotated simultaneously.The tantalum oxide films were characterized in terms of uniformity of thickness, composition, structure, and optical properties across the substrate. Average deviations typically below 1% were achieved in thickness, composition, indices of refraction and optical energy band-gap. Identical X-ray diffraction spectra were obtained at the center, middle of radius and edge of the wafers.

Synthesis and optical properties of tantalum oxide films prepared by ionized plasma-assisted pulsed laser deposition

2008 ◽  
Vol 147 (3-4) ◽  
pp. 90-93 ◽  
Author(s):  
Xiliang He ◽  
Jiehua Wu ◽  
Lili Zhao ◽  
Jia Meng ◽  
Xiangdong Gao ◽  
...  
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition

Preparation and microstructural characterization of Si(100) Ce1−x GdxO2−δ thin films prepared by pulsed laser deposition technique

2014 ◽  
Vol 32 (4) ◽  
pp. 541-546 ◽  
Author(s):  
P. Nagaraju ◽  
Y. Vijayakumar ◽  
D. Phase ◽  
V. Reddy ◽  
M. Ramana Reddy
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Microstructural Characterization ◽  
Laser Deposition ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Krf Excimer Laser

AbstractMicrostructural properties of Ce1-x GdxO2-δ (x = 0 to 0.3) thin films prepared by pulsed laser deposition technique were studied. The thin films were deposited on Si(100) substrate at a substrate temperature of 973 K at the oxygen partial pressure of 0.2 Pa using KrF excimer laser with energy of 220 mJ. The prepared thin films were characterized by X-ray diffraction, Raman spectroscopy and atomic force microscopy. X-ray diffraction analysis confirmed the polycrystalline nature of the thin films. Crystallite size, strain and dislocation density were calculated. The Raman studies revealed the formation of Ce-O with the systematic variation of peak intensity and full width half maxima depending on concentration of gadolinium dopant. The thickness of the films was estimated using Talystep profiler. The surface roughness was estiamted based on AFM.

Characterization of tantalum oxide films grown by pulsed laser deposition

1999 ◽  
Vol 120-121 ◽  
pp. 757-764 ◽  
Author(s):  
S. Boughaba ◽  
M.U. Islam ◽  
G.I. Sproule ◽  
M.J. Graham
Keyword(s):  
Pulsed Laser Deposition ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition

Large area Pulsed Laser Deposition of Aurivillius-Type Layered Perovskite Thin Films

1996 ◽  
Vol 433 ◽  
Author(s):  
A. Pignolet ◽  
C. Curran ◽  
S. Welke ◽  
S. Senz ◽  
M. Alexe ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Layered Perovskite ◽  
Electrical Measurements ◽  
Large Area ◽  
A New Technique ◽  
Composition Structure ◽  
Near Future

AbstractThin films of Aurivillius-type layered perovskites of Bi4Ti3O12 and SrBi2Ta2O9 have been epitaxially deposited by pulsed laser deposition (PLD) on SrTiO3 single crystal substrates. Bi4 Ti3O12 has been deposited as well on a CeO2JYSZ/Si(100) buffer layer, and on Pt-coated oxidized silicon for electrical measurements. Using a new technique for large area PLD, Bi4Ti3O12 has also been deposited on a whole (100)-oriented 3”- Si wafer. The obtained films have a uniform thickness over a diameter greater than 50 mm, corresponding to an area of about 20 cm2. It is likely that homogeneous deposition on entire wafers of 3-inch in diameter will be accomplished in the near future. The composition, structure, and electrical properties of the films are presented.

scholarly journals Large-Area Pulsed Laser Deposition of Silicon Carbide Films

2002 ◽  
Vol 715 ◽  
Author(s):  
D. Yang ◽  
L. Xue ◽  
C. M. Mccague ◽  
P. R. Norton ◽  
C. S. Zhang
Keyword(s):  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Index Of Refraction ◽  
Laser Deposition ◽  
Large Area ◽  
Force Microscopy ◽  
Wide Range ◽  
Krf Excimer Laser ◽  
Amorphous Sic

AbstractSilicon carbide (SiC) thin films are attractive for a wide range of applications ranging from microelectronic and opto-electronic devices to protective and tribological coatings. In this paper, we will demonstrate that silicon carbide films can be successfully deposited by pulsed laser deposition (PLD) technique over large areas, with good uniformity in thickness, composition, and film-specific properties.Amorphous SiC films were grown on silicon wafers of 75-mm diameter over a temperature range of 25 – 650°C using a KrF excimer laser at a wavelength 248 nm and a repetition rate of 100 Hz. The large-area uniform coverage was obtained by rastering the laser beam over the radius of a rotating SiC target of 90-mm diameter, while the substrate was rotated simultaneously. The uniformity of film composition over the 75-mm wafers was characterized by Auger electron spectroscopy (AES), while the crystallinity of films was investigated by X-ray diffraction (XRD). The morphology of the films was evaluated using scanning electron microscopy (SEM) and atomic force microscopy (AFM). The thickness of the coatings, and the index of refraction, n, along the wafer radii were measured optically using a spectrophotometer.

A Study of Copper Oxide Films Fabricated by Pulsed Laser Deposition

1995 ◽  
Vol 401 ◽  
Author(s):  
R. E. Leuchtner ◽  
L. S. Hristakos
Keyword(s):  
Copper Oxide ◽  
Pulsed Laser Deposition ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Laser Fluences ◽  
Target Composition ◽  
Background Gas

AbstractCopper oxide films were grown using the pulsed laser deposition (PLD) method with either a copper metal or a copper oxide target. A variety of deposition pressures of oxygen (0.001–0.3 torr) and temperatures (350, 450, and 550°C) were explored. From x-ray diffraction analysis, epitaxial <100> CuO films were observed at 450°C and either at 0.01 or 0.1 torr for the CuO and the Cu targets, respectively. Deposition rates were measured for the two targets (Cu and CuO) as a function of laser fluence and background gas pressure and enabled a morphological study of films prepared at different laser fluences but of similar film thickness (∼0.3 μm). The number density of particulates as well as the smoothness of the underlying film surface of the CuO films varied significantly with the target composition. The CuO films from the Cu target were the smoothest and had the fewest particulates.

Correlation of compositional and structural changes during pulsed laser deposition of tantalum oxide films

2004 ◽  
Vol 453-454 ◽  
pp. 245-250 ◽  
Author(s):  
Zs Geretovszky ◽  
T Szörényi ◽  
J.-P Stoquert ◽  
I.W Boyd
Keyword(s):  
Pulsed Laser Deposition ◽  
Structural Changes ◽  
Tantalum Oxide ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Laser Deposition
Sign in / Sign up

Export Citation Format

Share Document