X-ray absorption study of silicon carbide thin film deposited by pulsed laser deposition

2011 ◽  
Vol 184 (3-6) ◽  
pp. 240-244 ◽  
Author(s):  
G. Monaco ◽  
M. Suman ◽  
D. Garoli ◽  
M.G. Pelizzo ◽  
P. Nicolosi
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Absorption Study ◽  
X Ray ◽  
X Ray Absorption

X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition

2004 ◽  
Vol 19 (11) ◽  
pp. 1322-1324 ◽  
Author(s):  
A Erlacher ◽  
M Ambrico ◽  
V Capozzi ◽  
V Augelli ◽  
H Jaeger ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
X Ray Absorption

scholarly journals X-ray Absorption Near Edge Structures of Silicon Nitride Thin Film by Pulsed Laser Deposition

2004 ◽  
Vol 45 (7) ◽  
pp. 2039-2041 ◽  
Author(s):  
Takeo Suga ◽  
Teruyasu Mizoguchi ◽  
Masahiro Kunisu ◽  
Kazuyoshi Tatsumi ◽  
Tomoyuki Yamamoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
X Ray Absorption

scholarly journals Study of CuS Thin Films Deposited by PLD Simulated for Prism Based SPR Sensor

2021 ◽  
Vol 39 (6) ◽  
pp. 936-945
Author(s):  
Isaac S. Najm ◽  
Ali A. Alwahib ◽  
Suad M. Kadhim
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Surface Plasmon ◽  
Quartz Substrate ◽  
Pulsed Laser ◽  
Morphological Characteristics ◽  
Laser Deposition ◽  
X Ray ◽  
Optical Test ◽  
Depth Analysis

Copper Sulfide CuS thin film was prepared using pulsed laser deposition PLD technique and characterized by X-ray and SEM. The optical, structural, and morphological properties are examined at different energies 500 mJ, 600 mJ, 700 mJ, and 800 mJ. The best result was 600 mJ which annealed at various annealing temperatures 300°C, 350°C, 400°C, and 450°C. The effect of thermal annealing on CuS thin film was examined X-ray and SEM. CuS Film was simulated using a prism-based SPR optical sensor. This paper introduces the optical test study of CuS thin film deposited by pulsed laser deposition technique on the quartz substrate and supported by theoretical application study under the effect of surface plasmon resonance (SPR). In this research field, the optical and morphological characteristics of the CuS thin film were deposited by PLD at different laser energies. The annealing process was applied for better-deposited thin-film; the XRD results, SEM images, transmittance T%, and energy gap Eg were analyzed thoroughly and compared to evaluate the thin-film. This effort was made in an in-depth analysis of CuS thin film deposited by PLD on the quartz substrate and applied theoretically in surface plasmon application.

scholarly journals The Study of Optical and Electrical Properties of Nanostructured Silicon Carbide Thin Films Grown by Pulsed-Laser Deposition

2021 ◽  
Vol 9 (2) ◽  
pp. 46-50
Author(s):  
Muhanad A. Ahmed ◽  
Mohammed F. Mohammed Sabri ◽  
Wathiq R. Abed
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Silicon Carbide ◽  
Absorption Coefficient ◽  
Pulsed Laser Deposition ◽  
Extinction Coefficient ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Cutoff Wavelength ◽  
Nanostructured Silicon

In this paper, nanostructured silicon carbide (SiC) thin films are deposited onto glass substrate using pulsed laser deposition technique. Electrical and optical characterizations such as conductivity, resistivity, transmission, Seeback effect, absorption, absorption coefficient, energy band gap, and extinction coefficient as a function of photon energy, and the effect of thin films thickness on transmission are carried out to characterize the prepared samples. Results showed that the prepared SiC thin film is an n-type semiconductor with an indirect bandgap of ~3 eV, 448 nm cutoff wavelength, 3.4395 × 104 cm−1 absorption coefficient and 0.154 extinction coefficient. The surface morphology of the SiC thin films is studied using scanning electron microscope at a substrate temperature of 400 °C and it is found that the grain size of the prepared SiC thin film is about 30 nm. As such, the nano thin films optical and structural characteristics enable the films to be used as gases sensors in many optoelectronic devices such as the environment and ultraviolet photodiode.

Hardness Optimization of (Cr,Mg)(N,O) Thin Films Prepared by Pulsed Laser Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 311-314 ◽  
Author(s):  
Hiroki Asami ◽  
Jun Inoue ◽  
M. Hirai ◽  
Tsuneo Suzuki ◽  
Tadachika Nakayama ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Magnesium Content ◽  
Area Ratio ◽  
Laser Deposition ◽  
Metallic Elements ◽  
Surface Area Ratio ◽  
X Ray

Chromium magnesium oxynitride ((Cr,Mg)(N,O)) thin films have been prepared by pulsed laser deposition (PLD) method with changing the surface area ratio of Mg target (SR) from 0 to 100 %. As a result of the analysis by energy dispersive X-ray spectroscopy (EDX), it was found that magnesium content in the total metallic elements (Cr1-x, Mgx) are controlled by changing SR from 0 to 100 % to be the x ranging from 0 to 1.0. Since the crystal structure of main phase in all thin films was found to be NaCl type, the XRD results showed that the thin films were mainly consisted of (Cr,Mg)(N,O). The hardness of (Cr,Mg)(N,O) thin films were increased almost linearly up to SR = 50 %, above which it decreases rapidly. The maximum Vickers hardness (HV) of 3600 was obtained for the thin film which was prepared by SR = 50 %, and the minimum HV of 1650 was obtained for the thin film which was prepared by SR = 100 %.

Single- and Multi-target Pulsed Laser Deposition of Thin BSTO films: Preparation, Microstructure and Electrical Properties

2003 ◽  
Vol 784 ◽  
Author(s):  
Kumaravinothan Sarma ◽  
Peter Kr. Petrov ◽  
Neil McN. Alford
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structural And Electrical Properties ◽  
Capacitor Structure

ABSTRACTA comparative study of microstructure and electrical properties of BaxSr1-xTiO3 films made by single- and multi-target pulsed laser deposition was carried out. The films were epitaxially grown on both LaAlO3 and MgO substrates. The structural properties of all samples were investigated using X-ray diffraction and Raman spectroscopy. The elemental composition of the samples was investigated using energy dispersive X-ray analysis. For electrical properties examination, a simple capacitor structure was patterned on the film surface. Thin films made using both methods exhibit similar structural and electrical properties; however the samples made by a multi-target method underwent phase transition in a broader temperature region. The results prove the possibility of using the multi-target pulse laser deposition as a more flexible method for engineering thin film stoichometry.

Influence of Sr-Doping on the Structure of LaCoO3 Thin Films Prepared by Pulsed Laser Deposition

2015 ◽  
Vol 231 ◽  
pp. 19-24 ◽  
Author(s):  
Agnieszka Kopia ◽  
Łukasz Cieniek ◽  
Kazimierz Kowalski ◽  
Jan Kusiński
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Sem Analysis ◽  
Laser Deposition ◽  
Layer Surface ◽  
X Ray Diffraction ◽  
X Ray ◽  
Structure And Morphology

The aim of the research was to investigate the influence of strontium on the structure thin films La1-x SrxCoO3 (x=0; 0.1, 0.2). The LaCoO3 and LaCoO3 doped by Sr films were grown by pulsed laser deposition (PLD) on Si [100] substrate using an Excimer KrF (= 248 nm). To characterize the structure and morphology of the thin films were used the SEM, AFM and XRD methods. X-Ray Diffraction analysis showed only LaCoO3 phase in the thin film not doped andLa0.1Sr0.9CoO3 and La0.2Sr0.8CoO3 phases in thin films doped by Sr. The crystallites size, calculated by Williamson-Hall plots, was smaller for films doped by Sr. The surface of the thin films was free from the drops. SEM analysis showed change of the shape of thin films as a result of doping by Sr. Highly developed layer surface was observed using the AFM microscope for thin films doped by Sr.

Pulsed Laser Deposition of Epitaxial Sr(RuxSn1-x)O3 Thin Film Electrodes and KNbO3/Sr(RuxSnl-x)O3 Bilayers

1995 ◽  
Vol 401 ◽  
Author(s):  
H.-M. Christen ◽  
L. A. Boatner ◽  
L. Q. Englisht ◽  
L. A. Géa ◽  
P. J. Marrero ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
Lattice Match ◽  
X Ray ◽  
Resistivity Measurements ◽  
Ion Channeling

AbstractSr(RuxSnl-x)O3 is proposed as a new conducting oxide for use in epitaxial multilayer structures. The Sr(Ru0.48Sn0.52)O3 composition exhibits an excellent lattice match with (100)-oriented KTaO3, and films of this composition grown by pulsed laser deposition on KTaO3, SrTiO3, and LaAIO3 substrates have been analyzed by X-ray diffraction, Rutherford backscattering/ion channeling, and resistivity measurements. Epitaxial KNbO3/Sr(Ru0 48Sn0.52)O3 bilayers have been successfully grown.

Resonant soft X-ray emission and X-ray absorption studies on Ga1-xMnxN grown by pulsed laser deposition

2011 ◽  
Vol 8 (5) ◽  
pp. 1608-1610 ◽  
Author(s):  
Satheesh Krishnamurthy ◽  
Brian Kennedy ◽  
Fintan McGee ◽  
M. Venkatesan ◽  
J. M. D. Coey ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray ◽  
Absorption Studies ◽  
X Ray Absorption
Sign in / Sign up

Export Citation Format

Share Document