Light-intensity and temperature dependence of trap-dangling bond recombination in hydrogenated microcrystalline silicon

2002 ◽  
Vol 715 ◽  
Author(s):  
Christoph Boehme ◽  
Klaus Lips
Keyword(s):  
Electron Spin Resonance ◽  
Magnetic Resonance ◽  
Light Intensity ◽  
Quantitative Study ◽  
Time Domain ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Spin Resonance ◽  
Electrically Detected Magnetic Resonance ◽  
Tunneling Recombination

AbstractA quantitative study of the trap-dangling bond tunneling recombination in hydrogenated microcrystalline silicon (μc-Si:H) is presented. The transition coefficients were measured at various light exposures and temperatures between T = 10 K and T = 140 K using time-domain measurements of spin-dependent recombination (TSR). TSR is a new characterization method related to electrically detected magnetic resonance (EDMR). It combines the advantages of pulsed electron spin resonance with that of EDMR. In contrast to previous models, the experimental results can only be interpreted if the interaction between the spins of the trap and the dangling bonds as well as triplet recombination is considered.

Defect and Tail States in Microcrystalline Silicon investigated by pulsed ESR

2000 ◽  
Vol 609 ◽  
Author(s):  
P. Kanschat ◽  
H. Mell ◽  
K. Lips ◽  
W. Fuhs
Keyword(s):  
Electron Spin Resonance ◽  
Detailed Analysis ◽  
Electron Spin ◽  
Qualitative Model ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
Band Tail ◽  
Spin Resonance ◽  
Donor States ◽  
Broad Structure

ABSTRACTWe report on a detailed analysis of paramagnetic states in a doping series of microcrystalline silicon, μc-Si:H, by pulsed electron spin resonance. We identify two dangling bond like structures at g = 2.0052 (db1) and g = 2.0043 (db2). Whereas db1 is evenly distributed in the gap, the db2 state is found to be localized in the lower part of the gap. The CE resonance at g ≈ 1.998 is assigned to electrons in conduction band tail states. In p-doped samples, we observe a broad structure CH at g ≈ 2.08 which we identify with holes trapped in valence band tail states. It is shown that the CH state behaves very similar on illumination as the CE resonance. In n-type samples a pair of hyperfine split lines (A ≈ 11 mT) is found which apparently does not originate from 31P-donor states. On the basis of our results we propose a qualitative model for paramagnetic states in μc-Si:H.

Electrically Detected Magnetic Resonance (EDMR) Studies of SiC-SiO2 Interfaces

2012 ◽  
Vol 717-720 ◽  
pp. 427-432 ◽  
Author(s):  
Takahide Umeda ◽  
Ryouji Kosugi ◽  
Kenji Fukuda ◽  
Norio Morishita ◽  
Takeshi Ohshima ◽  
...  
Keyword(s):  
Electron Spin Resonance ◽  
Magnetic Resonance ◽  
Significant Finding ◽  
Spin Resonance ◽  
Dry Oxidation ◽  
Electrically Detected Magnetic Resonance ◽  
Nitrogen Donors ◽  
Channel Region ◽  
Nitrogen Sample ◽  
Incorporated Nitrogen

We discuss the results of electrically detected magnetic resonance (EDMR) spectroscopy on SiC-SiO2 interfaces interacting with hydrogen and nitrogen. Using EDMR, three types of 4H-SiC MOSFETs, which were prepared by dry oxidation (“Dry” sample), post hydrogen anneal (“Hydrogen” sample), and post nitridation anneal (“Nitrogen” sample), were examined in the temperature range of 4–300 K. These samples revealed several different results from the earlier ESR (electron spin resonance) and EDMR studies on SiC-SiO2 interfaces. The most significant finding was the high-density doping of nitrogen into the channel region after the post nitridation anneal. The incorporated nitrogen donors were observed as the “Nh” EDMR signal at 4–20 K. Roles of these nitrogen donors are discussed in correlation with the electrical properties of SiC MOSFETs.

High Frequency Electron Spin Resonance Study of Hydrogenated Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Takashi Ehara
Keyword(s):  
Electron Spin Resonance ◽  
Substrate Temperature ◽  
Electron Spin ◽  
Esr Spectra ◽  
Electron Spin Resonance Study ◽  
Dangling Bond ◽  
Microcrystalline Silicon ◽  
W Band ◽  
X Band ◽  
Spin Resonance

AbstractDangling bond defects (DB) in hydrogenated microcrystalline silicon (μc-Si:H) have been studied by X-band (9 GHz) Q-band (33 GHz) and W-band (90 GHz) electron spin resonance (ESR) spectroscopy. In X-band ESR spectra, all the samples showed asymmetric dangling bond defect signal at g = 2.005 – 2.006. The DB signal shape shows little dependence on substrate temperature in the X-band electron spin resonance (ESR) spectra. In the Q-band and W-band ESR spectra, existence of two centers in DB signals is clearly indicated by the shape of the spectra. The Q-band ESR spectra shape reviles that the peak of one center is at g = 2.0055andthe other is around at g = 2.0060. In addition, the DB signal showed dependence on substrate temperature. The dependence of the DB signals can be explained by difference of intensity ratio of the peaks by these two centers. The signal at g = 2.0060 is consistent with the asymmetric ESR signal observed in the microcrystalline silicon embedded in SiO2. W-band ESR measurement indicates that the signal observed at g = 2.0060 is due to single inhomogeneous species and does not consist of plural species.

Sign in / Sign up

Export Citation Format

Share Document