The characterization of pure and niobium-doped crystals of strontium titanate using Hall, electrical conductivity, and optical absorption data

1978 ◽  
Vol 56 (4) ◽  
pp. 453-467 ◽  
Author(s):  
G. Perluzzo ◽  
J. Destry
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Optical Absorption ◽  
Hall Effect ◽  
Strontium Titanate ◽  
Defect States ◽  
Absorption Data ◽  
Niobium Doped ◽  
Hall Effect Measurements

A description is given of the heat treatment, under controlled conditions, of crystals of strontium titanate, both pure and niobium-doped, and of the effect of this treatment on the defect states in this material. Our analysis is based on evaluation of the results of electrical conductivity and Hall effect measurements, and those of optical absorption.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Electrical Properties and Defect States of Laser Crystallized Polycrystalline Silicon Films

2001 ◽  
Vol 664 ◽  
Author(s):  
Tadashi Watanabe ◽  
Nobuyuki Andoh ◽  
Toshiyuki Sameshima
Keyword(s):  
Heat Treatment ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Deep Level ◽  
Silicon Films ◽  
Laser Shot ◽  
Defect States ◽  
Shot Number ◽  
Polycrystalline Silicon Films ◽  
Effective Carrier

ABSTRACTIn this paper, changes in electrical properties of laser crystallized silicon films doped with 8.5×1017-cm−3-phosphorus atoms as a function of laser shot number are investigated. The samples are treated with plasma hydrogenation for 30 sec at 130 Pa at 250 °C and additional H2O vapor heat treatment at 260 °C for 3 hours with 1.3 MPa. The electrical conductivity at room temperature become about 10−6∼10−-5 S/cm as laser shot number increases from 1 to 100. After hydrogenation and additional H2O vapor heat treatment, electrical conductivity remarkably increases to 100∼101S/cm. At laser irradiation of 20 or 50 shots after both treatments, the density of defect at deep level states and tail states are determined 1.15×1017 cm−3 and 5.7×1017cm−3 using an analysis program. Potential barrier height at grain boundary is 0.048 eV. The effective carrier density and carrier mobility are markedly increased up to1017cm−3 and 209 cm2/Vs by hydrogenation and additional H2O vapor heat treatment.

Hall Effect Measurements on New Thermoelectric Materials

2003 ◽  
Vol 793 ◽  
Author(s):  
Jarrod Short ◽  
Sim Loo ◽  
Sangeeta Lal ◽  
Kuei Fang Hsu ◽  
Eric Quarez ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Measurement System ◽  
Material Properties ◽  
Figure Of Merit ◽  
New Materials ◽  
Temperature Dependent ◽  
Additional Insight ◽  
Hall Effect Measurements

ABSTRACTIn the field of thermoelectrics, the figure of merit of new materials is based on the electrical conductivity, thermoelectric power, and thermal conductivity of the sample, however additional insight is gained through knowledge of the carrier concentrations and mobility in the materials. The figure of merit is commonly related to the material properties through the B factor which is directly dependent on the mobility of the carriers as well as the effective mass.To gain additional insight on the new materials of interest for thermoelectric applications, a Hall Effect system has been developed for measuring the temperature dependent carrier concentrations and mobilities. In this paper, the measurement system will be described, and recent results for several new materials will be presented.

scholarly journals Characterization of traps at nitrided SiO2/SiC interfaces near the conduction band edge by using Hall effect measurements

2017 ◽  
Vol 10 (4) ◽  
pp. 046601 ◽  
Author(s):  
Tetsuo Hatakeyama ◽  
Yuji Kiuchi ◽  
Mitsuru Sometani ◽  
Shinsuke Harada ◽  
Dai Okamoto ◽  
...  
Keyword(s):  
Hall Effect ◽  
Conduction Band ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Hall Effect Measurements

Characterization of unintentionally or lightly doped polysilicon films by improved Hall effect measurements

1997 ◽  
Vol 301 (1-2) ◽  
pp. 230-235 ◽  
Author(s):  
F. Le Bihan ◽  
B. Fortin ◽  
S. Cauneau ◽  
D. Briand ◽  
O. Bonnaud
Keyword(s):  
Hall Effect ◽  
Polysilicon Films ◽  
Hall Effect Measurements

Electrical properties of InAsxSb1−x alloys

1968 ◽  
Vol 46 (10) ◽  
pp. 1207-1214 ◽  
Author(s):  
William M. Coderre ◽  
John C. Woolley
Keyword(s):  
Electrical Conductivity ◽  
High Temperature ◽  
Electrical Properties ◽  
Optical Absorption ◽  
Thermoelectric Power ◽  
Hall Coefficient ◽  
Conductivity Data ◽  
Absorption Data ◽  
Alloy Scattering ◽  
Electrical Conductivity Data

Measurements have been made of the high-temperature Hall coefficient, electrical conductivity, and thermoelectric power in polycrystalline n-type samples of InAsxSb1−x alloys of extrinsic carrier concentration ~1017/cm3. From the Hall-coefficient data, values of the extrapolated absolute-zero band gap E00 have been determined over the whole alloy range, the thermoelectric power results being used to provide a correction factor to allow for effects of degeneracy. In all cases this correction was found to be very small. The resultant values of E00 for the alloys are somewhat lower than those obtained previously from optical absorption data and show a minimum of 0.17 eV at x ~0.4. From the electrical conductivity data, values of electron mobility μc have been obtained as a function of temperature T and composition x. At all temperatures in the range 0–500 °C, μc is found to vary linearly with x, indicating that the effects of alloy scattering are negligible. For each value of x, μc is found to satisfy the relation μc = μ0 exp (−T/θ), and the variation of θ with x has been determined.

Synthesis, Characterization and Hall Effect Measurements of Nanocrystalline ZnO Thin Films

2012 ◽  
Vol 510-511 ◽  
pp. 186-193 ◽  
Author(s):  
Ashari Maqsood ◽  
M. Islam ◽  
M. Ikram ◽  
S. Salam ◽  
S. Ameer
Keyword(s):  
Thin Films ◽  
Hall Effect ◽  
Sol Gel ◽  
Visible Region ◽  
Zno Thin Films ◽  
Zno Films ◽  
Morphological Studies ◽  
Hall Effect Measurements ◽  
Scherrer Formula

ZnO thin films were prepared by sol-gel method. Prepared thin films were then characterized by SEM, XRD, EDX and Hall effect measurements. SEM confirmed the morphological studies of ZnO thin films. Crystallite size is calculated using the Scherrer formula. Crystallite and grain sizes are obtained through XRD and SEM. EDS analysis confirms mass percentage of ZnO deposited. Decreasing trend of magneto resistance with temperature is observed. The optical transmission spectra of the solgel deposited ZnO thin films showed high transmittance (>70%) in the visible region and indicates that the transmittance of ZnO films gradually decreased as the thickness increased. Decreasing trend of resistivity and sheet resistance with thickness are also observed. The IV characterization of ZnO thin films under influence of UV and dark conditions are reported. The dc electrical resistivity data follow the hoping model.

Variations in the photoconductivity and in the electrical counting properties of diamonds

1956 ◽  
Vol 234 (1198) ◽  
pp. 419-432 ◽  
Keyword(s):  
Electrical Conductivity ◽  
Electric Field ◽  
Hall Effect ◽  
Temperature Effects ◽  
Room Temperature ◽  
Red Light ◽  
Quantitative Relationship ◽  
Charge Carriers ◽  
Light Irradiation ◽  
Hall Effect Measurements

The electrical conductivity produced by β -ray bombardment and by light irradiation in several diamonds was investigated in the temperature range 150 to 500° K. Considerable uniformity was observed in the behaviour of the specimens; all of them polarized strongly in the dark at room temperature, and polarization could be effectively eliminated by pulsing the electric field while maintaining the β -flux. Both the counting response and the photoconductivity increased as the temperature was lowered. This was interpreted as being largely due to an increase in the mobility of the charge carriers at lower temperatures, the quantitative relationship being consistent with Hall effect measurements. Accumulation of polarization was reduced by irradiation with red light or by elevation of temperature; at 420° K little sign of polarization remained. From various temperature effects, the thermal depths of the trapping levels in these diamonds were estimated at 0⋅6, 0⋅8 and 1 eV.

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