Submicron Highly Doped Silicon Epitaxial Layers Grown by Lpvpe

1986 ◽  
Vol 71 ◽  
Author(s):  
L. Vescan ◽  
H. Beneking ◽  
O. Meyer
Keyword(s):  
Epitaxial Growth ◽  
Schottky Barrier ◽  
Boron Doping ◽  
Low Pressure ◽  
Vapour Phase ◽  
Doping Profile ◽  
Epitaxial Layers ◽  
Vapour Phase Epitaxy ◽  
Doped Silicon

AbstractBy low pressure vapour phase epitaxy (LPVPE) epitaxial growth down to 760ºC has been achieved in the SiC12H2/H2 system, as revealed by RBS and channeling measurements ( min ∼4.0%). High and relative homogeneous doping was obtained with boron resp. phosphorus in the range 1x1018 -5x1019 cm-3 for T: 800º - 900ºC. Sharp transitions in the boron doping profile to the substrate, of the order of 15mn, result only for temperatures much lower than 850ºC. Schottky barrier enhanced diodes with promising performances were formed with Ti evaporated on p+n layers grown selectively on n+ substrates.

A Tem study of GaN Grown by ELO on (0001) 6H-SiC

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Ruterana ◽  
B. Beaumont ◽  
P. Gibart ◽  
Y. Melnik
Keyword(s):  
Basal Plane ◽  
Lattice Mismatch ◽  
Early Stage ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Prismatic Plane ◽  
Vapour Phase Epitaxy ◽  
Hexagonal Shape ◽  
To Come

AbstractThe misfit between GaN and 6H-SiC is 3.5% instead of 16% with sapphire, the epitaxial layers have similar densities of defects on both substrates. Moreover, the lattice mismatch between AlN and 6H-SiC is only 1%. Therefore, epitaxial layer overgrowth (ELO) of GaN on AlN/6H-SiC could be a route to further improve the quality of epitaxial layers. AlN has been grown by Halide Vapour Phase Epitaxy (HVPE) on (0001) 6H-SiC, thereafter a dielectric SiO2 mask was deposited and circular openings were made by standard photolithography and reactive ion etching. We have examined GaN layers at an early stage of coalescence in order to identify which dislocations bend and try to understand why. The analysed islands have always the same hexagonal shape, limited by {0110} facets. The a type dislocations are found to fold many times from basal to the prismatic plane, whereas when a+c dislocations bend to the basal plane, they were not seen to come back to a prismatic one.

scholarly journals Characterisation of III?V Multilayers Grown by Low-pressure Metal Organic Vapour-phase Epitaxy

1993 ◽  
Vol 46 (3) ◽  
pp. 435
Author(s):  
C Jagadish ◽  
A Clark ◽  
G Li ◽  
CA Larson ◽  
N Hauser ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Growth Temperature ◽  
Deep Level ◽  
Growth Parameters ◽  
Low Pressure ◽  
Vapour Phase ◽  
Growth Conditions ◽  
Vapour Phase Epitaxy ◽  
Metal Organic ◽  
Organic Vapour

Undoped and doped layers of gallium arsenide and aluminium gallium arsenide have been grown on gallium arsenide by low-pressure metal organic vapour-phase epitaxy (MOVPE). Delta doping and growth on silicon substrates have also been attempted. Of particular interest in the present study has been the influence of growth parameters, such as growth temperature, group III mole fraction and dopant flow, on the electrical and physical properties of gallium arsenide layers. An increase in growth temperature leads to increased doping efficiency in the case of silicon, whereas the opposite is true in the case of zinc. Deep level transient spectroscopy (DTLS) studies on undoped GaAs layers showed two levels, the expected EL2 level and a carbon-related level. The determination of optimum growth conditions has allowed good quality GaAs and AlGaAs epitaxial layers to be produced for a range of applications.`

Élimination des hydrures métalliques des déchets gazeux d'un réacteur LP-MOVPE pour la croissance de composés (In, Ga) (As, P)

1993 ◽  
Vol 71 (7-8) ◽  
pp. 307-315 ◽  
Author(s):  
P. Cova ◽  
R. A. Masut ◽  
R. Lacoursière ◽  
A. Bensaada ◽  
C. A. Tran ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Transit Time ◽  
Vapour Phase ◽  
Reaction Chamber ◽  
Vapour Phase Epitaxy ◽  
Toxic Gases ◽  
Gas Molecules ◽  
Chemical Products ◽  
The Cost ◽  
New System

We have realized a new system for treating gaseous wastes from a metallorganic vapour phase epitaxy (MOVPE) reactor used for the low pressure epitaxial growth of intrinsic and doped semiconducting crystals in the InGaAsP family. The system is based on a series of 5 successive phases of destruction: dilution, combustion pyrolysis, condensation and filtering. The design minimizes the cost remarkably and optimizes the incineration of toxic gases. After the combustion of 138 m3 of H2 and the incineration of 276 L of phosphine, we observe that the reaction chamber does not show any corrosion nor any deposit of chemical products, which are daily eliminated together with the water produced during the combustion. For the maximum phosphine concentration that has been used (7340 ppm), no phosphine concentration has been detected in the output with a detecting system having a sensitivity of 0.001 ppm. For the total fluxes entering the reaction chamber (10–25 L/min), the transit time (1s) of gas molecules does not limit the efficiency of conversion of toxic gases. This is important if one wishes to adapt this system to a MOVPE production reaction using a higher flux of phosphine.[Journal translation]

Modelling of epitaxial growth rate of silicon by vapour phase epitaxy

1990 ◽  
Vol 21 (5) ◽  
pp. 29-39 ◽  
Author(s):  
A.N. Daw ◽  
D.K. Pal ◽  
M.K. Kowar
Keyword(s):  
Growth Rate ◽  
Epitaxial Growth ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy

Residual and thermal strain of ZnS epitaxial layers grown on (100)-GaAs by vapour phase epitaxy

1995 ◽  
Vol 28 (4A) ◽  
pp. A125-A128 ◽  
Author(s):  
C Giannini ◽  
L Tapfer ◽  
T Peluso ◽  
N Lovergine ◽  
L Vasanelli
Keyword(s):  
Thermal Strain ◽  
Vapour Phase ◽  
Epitaxial Layers ◽  
Vapour Phase Epitaxy

Growth and properties of GaxIn1−xAs–GaAs strained layer superlattices grown by low-pressure metal-organic vapour-phase epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 909-912 ◽  
Author(s):  
A. P. Roth ◽  
R. A. Masut ◽  
M. Sacilotti ◽  
P. J. D'Arcy ◽  
G. I. Sproule ◽  
...  
Keyword(s):  
Gas Flow ◽  
Flow Direction ◽  
Low Pressure ◽  
Vapour Phase ◽  
Vapour Phase Epitaxy ◽  
Strained Layer ◽  
Additional Strain ◽  
Metal Organic ◽  
Organic Vapour ◽  
Strained Layer Superlattices

We have analyzed the structural and optical properties of GaxIn1−xAs–GaAs strained-layer superlattices (SLS) grown by low-pressure metal-organic vapour-phase epitaxy. Sample uniformity over 2.5 cm × 2.5 cm has been studied by X-ray diffraction and low-temperature photoluminescence. The sample composition and period are uniform in the longitudinal direction (gas-flow direction in the reactor) and in the central portion (1.5 cm) in the transverse direction. On each side, the In composition decreases slightly towards the edges, as shown by an energy shift of the photoluminescence excitonic recombinations. Comparison of experimental and calculated transition energies in a series of samples, taking into account strain and quantization, shows clearly that SLS grown on mismatched buffer layers arc under additional strain. This additional strain is not present when the layer or whole SLS thicknesses exceed a critical value beyond which the mismatch is partially accommodated by misfit dislocations.

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