scholarly journals Optimizing Pentacene Growth in Low-Voltage Organic Thin-Film Transistors Prepared by Dry Fabrication Techniques

2012 ◽  
Vol 1435 ◽  
Author(s):  
S. Gupta ◽  
K. C. Chinnam ◽  
M. Zelzer ◽  
R. Ulijn ◽  
H. Gleskova
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Evaporation Rate ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Transistor Channel ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTWe have studied the effect of pentacene purity and evaporation rate on low-voltage organic thin-film transistors (OTFTs) prepared solely by dry fabrication techniques. The maximum field-effect mobility of 0.07 cm2/Vs was achieved for the highest pentacene evaporation rate of 0.32 Å/s and four-time purified pentacene. Four-time purified pentacene also led to the lowest threshold voltage of -1.1 V and inverse subthreshold slope of ∼100 mV/decade. In addition, pentacene surface was imaged using atomic force microscopy, and the transistor channel and contact resistances for various pentacene evaporation rates were extracted and compared to field-effect mobilities.

Oligothiophene-Based Organic Thin-Film Transistors: A Kelvin Probe Force Microscopy Study of the Electronic Properties

2012 ◽  
Vol 1435 ◽  
Author(s):  
N.S. Afsharimani ◽  
B. Nysten
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Grain Boundaries ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Kelvin Probe ◽  
Force Microscopy

ABSTRACTIn the past decades organic thin film transistors (OTFTs) have been notably studied due to their interesting properties. Not only they can be processed by simple methods such as inkjet printing but also open the doors to new applications for cheap plastic electronics including electronic tags, biosensors, flexible screens,… However, the measured field-effect mobility in OTFTs is relatively low compared to inorganic devices. Generally, such low field-effect mobility values result from extrinsic effects such as grain boundaries or imperfect interfaces with source and drain electrodes. It has been shown that reducing the number of grain boundaries between the source and drain electrodes improves the field effect mobility.1-3 Therefore, it is important to understand the transport mechanisms by studying the structure of organic thin films and local electrical properties within the channel and at the interfaces with source and drain electrodes in order to improve the field-effect mobility in OTFTs. Kelvin probe force microscopy (KPFM) is an ideal tool for that purpose since it allows to simultaneously investigation of the local structure and the electrical potential distribution in electronic devices. In this work, the structure and the electrical properties of OTFTs based on dioctylterthiophene (DOTT) were studied. The transistors were fabricated by spin-coating of DOTT on the transistor structures with treated (silanized) and untreated channel oxide. The potential profiles across the channel and at the metal-electrode interfaces were measured by KPFM. The effect of surface treatment on hysteresis effects was also studied. Smaller crystals and a lower threshold voltage were observed for the silanized devices. Hysteresis effects appeared to be less important in modified devices compared to the untreated ones.

The importance of spinning speed in fabrication of spin-coated organic thin film transistors: Film morphology and field effect mobility

2014 ◽  
Vol 104 (23) ◽  
pp. 233306 ◽  
Author(s):  
Kenji Kotsuki ◽  
Hiroshige Tanaka ◽  
Seiji Obata ◽  
Sven Stauss ◽  
Kazuo Terashima ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Organic Thin Film Transistors ◽  
Film Morphology ◽  
Organic Thin Film ◽  
Field Effect Mobility ◽  
Spinning Speed

scholarly journals Low-voltage organic thin-film transistors based on [n]phenacenes

2019 ◽  
Vol 73 ◽  
pp. 286-291
Author(s):  
Afra Al Ruzaiqi ◽  
Hideki Okamoto ◽  
Yoshihiro Kubozono ◽  
Ute Zschieschang ◽  
Hagen Klauk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

scholarly journals Flexible low-voltage high-frequency organic thin-film transistors

2020 ◽  
Vol 6 (21) ◽  
pp. eaaz5156 ◽  
Author(s):  
James W. Borchert ◽  
Ute Zschieschang ◽  
Florian Letzkus ◽  
Michele Giorgio ◽  
R. Thomas Weitz ◽  
...  
Keyword(s):  
Thin Film ◽  
High Frequency ◽  
Thin Film Transistors ◽  
Low Voltage ◽  
Dynamic Performance ◽  
Lithium Ion ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Industry Standard ◽  
Primary Driver

The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

SuPR-NaP Technique for Printing Ultrafine Silver Electrodes and its Use for Low-Voltage Operation of Organic Thin-Film Transistors

MRS Advances ◽  
2018 ◽  
Vol 3 (49) ◽  
pp. 2931-2936
Author(s):  
G. Kitahara ◽  
K. Aoshima ◽  
J. Tsutsumi ◽  
H. Minemawari ◽  
S. Arai ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Layer ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Organic Thin Film Transistors ◽  
Base Layer ◽  
Organic Thin Film ◽  
Low Voltage Operation ◽  
Silver Electrodes

ABSTRACTRecently, an epoch-making printing technology called “SuPR-NaP (Surface Photo-Reactive Nanometal Printing)” that allows easy, high-speed, and large-area manufacturing of ultrafine silver wiring patterns has been developed. Here we demonstrate low-voltage operation of organic thin-film transistors (OTFTs) composed of printed source/drain electrodes that are produced by the SuPR-NaP technique. We utilize an ultrathin layer of perfluoropolymer, Cytop, that functions not only as a base layer for producing patterned reactive surface in the SuPR-NaP technique but also as an ultrathin gate dielectric layer of OTFTs. By the use of 22 nm-thick Cytop gate dielectric layer, we successfully operate polycrystalline pentacene OTFTs below 2 V with negligible hysteresis. We also observe the improvement of carrier injection by the surface modification of printed silver electrodes. We discuss that the SuPR-NaP technique allows the production of high-capacitance gate dielectric layers as well as high-resolution printed silver electrodes, which provides promising bases for producing practical active-matrix OTFT backplanes.

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