High performances and low variability of semiconducting-SWCNT thin-film-transistors achieved by shortening tube lengths

2014 ◽  
Vol 1586 ◽  
Author(s):  
Takeshi Saito ◽  
Shigekazu Ohmori ◽  
Kazuki Ihara ◽  
Yuki Kuwahara ◽  
Fumiyuki Nihey
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Thin Film Transistors ◽  
Length Distribution ◽  
Sodium Cholate ◽  
Tube Length ◽  
Ionic Surfactant ◽  
Layer Formation ◽  
Force Microscopy ◽  
Atomic Force

ABSTRACTThe tube-length distribution in the semiconducting single-wall carbon nanotube (s-SWCNT) ink extracted by the electric-field-induced layer formation (ELF) method was characterized by atomic force microscopy, which revealed that the nonionic surfactant Brij 700 adopted in ELF causes the significant and homogeneous shortening of SWCNTs compared with sodium cholate that is frequently used for the dispersion of SWCNTs as an ionic surfactant. It was found that the shortened s-SWCNTs in the semiconducting ink positively effect on the uniformity of performance among the s-SWCNT thin-film transistors.

A HfO2 Thin Film Resistive Switch Based on Conducting Atomic Force Microscopy

2011 ◽  
Vol 14 (8) ◽  
pp. H311 ◽  
Author(s):  
J. Y. Son ◽  
D.-Y. Kim ◽  
H. Kim ◽  
W. J. Maeng ◽  
Y.-S. Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Resistive Switch ◽  
Force Microscopy ◽  
Atomic Force

Effect of ultra-thin Cu underlayer on the magnetic properties of Ni80Fe50 / Fe50Mn50 films

1999 ◽  
Vol 562 ◽  
Author(s):  
C. Liu ◽  
L. Shen ◽  
H. Jiang ◽  
D. Yang ◽  
G. Wu ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Exchange Bias ◽  
Film Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Value ◽  
Film Roughness

ABSTRACTThe Ni80Fe20/Fe50Mn50,thin film system exhibits exchange bias behavior. Here a systematic study of the effect of atomic-scale thin film roughness on coercivity and exchange bias is presented. Cu (t) / Ta (100 Å) / Ni80Fe20 (100 Å) / Fe50Mno50 (200 Å) / Ta (200 Å) with variable thickness, t, of the Cu underlayer were DC sputtered on Si (100) substrates. The Cu underlayer defines the initial roughness that is transferred to the film material since the film grows conformal to the initial morphology. Atomic Force Microscopy and X-ray diffraction were used to study the morphology and texture of the films. Morphological characterization is then correlated with magnetometer measurements. Atomic Force Microscopy shows that the root mean square value of the film roughness exhibits a maximum of 2.5 Å at t = 2.4 Å. X-ray diffraction spectra show the films are polycrystalline with fcc (111) texture and the Fe50Mn50 (111) peak intensity decreases monotonically with increasing Cu thickness, t. Without a Cu underlayer, the values of the coercivity and loop shift are, Hc = 12 Oe and Hp = 56 Oe, respectively. Both the coercivity and loop shift change with Cu underlayer thickness. The coercivity reaches a maximum value of Hc= 36 Oe at t = 4 Å. The loop shift exhibits an initial increase with t, reaches a maximum value of HP = 107 Oe at t = 2.4 Å, followed by a decrease with greater Cu thickness. These results show that a tiny increase in the film roughness has a huge effect on the exchange bias magnitude.

Scratching properties of nickel-iron thin film and silicon using atomic force microscopy

2009 ◽  
Vol 106 (4) ◽  
pp. 044314 ◽  
Author(s):  
Ampere A. Tseng ◽  
Jun-ichi Shirakashi ◽  
Shinya Nishimura ◽  
Kazuya Miyashita ◽  
Andrea Notargiacomo
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Nickel Iron ◽  
Force Microscopy ◽  
Atomic Force
Sign in / Sign up

Export Citation Format

Share Document