Fabrication and characterization of in-situ grown epitaxial Ba1-xSrxTiO3 composition spreads

2001 ◽  
Vol 700 ◽  
Author(s):  
K. S. Chang ◽  
M. Aronova ◽  
O. Famodu ◽  
J. Hattrick-Simpers ◽  
S. E. Lofland ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Frequency Dispersion ◽  
Laser Deposition ◽  
Microwave Frequencies ◽  
Dielectric Characterization ◽  
Microwave Microscopy ◽  
Fabrication And Characterization ◽  
Multi Mode

AbstractWe have used our combinatorial pulsed laser deposition system to in-situ fabricate epitaxial Ba1-xSrxTiO3 thin film composition spreads on (100) LaAlO3 substrates. Multimode quantitative microwave microscopy was used to perform dielectric characterization of the spreads at multiple microwave frequencies simultaneously. Systematic variation in dielectric properties as a function of composition is studied. The multi-mode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric dispersion in Ba1-xSrxTiO3.

Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

FABRICATION AND CHARACTERIZATION OF La2-xSrxCuO4/Nb-SrTiO3 HETEROJUNCTIONS IN DIFFERENT DOPED REGIMES

2012 ◽  
Vol 27 (01) ◽  
pp. 1350005 ◽  
Author(s):  
Y. ZHANG ◽  
G. F. WANG ◽  
W. L. LI ◽  
J. Q. SHEN ◽  
P. G. LI ◽  
...  
Keyword(s):  
Carrier Density ◽  
Pulsed Laser ◽  
Depletion Layer ◽  
Laser Deposition ◽  
Superconducting Gap ◽  
Applied Bias ◽  
Current Voltage ◽  
Fabrication And Characterization ◽  
The Difference

Two types of p–n junction were fabricated by depositing underdoped La 1.9 Sr 0.1 CuO 4 film and overdoped La 1.8 Sr 0.2 CuO 4 film on n -type 0.5 wt.% Nb -doped SrTiO 3 (NSTO) substrates using pulsed laser deposition technique (PLD), respectively. Current–voltage (I–V) characteristics of the La 2-x Sr x CuO 4/NSTO heterojunction were measured in the temperature range from 5 K to 300 K. All I–V curves show a fine rectifying property and a visible reduction of the diffusion potential (Vd) is observed, but the behaviors of Vd are vastly different for the underdoped and overdoped regimes at temperatures below Tc. Analysis results show that the characteristics of the heterojunction are possibly affected not only by the superconducting gap of LSCO at Tc, but also by the depletion layer in the interface of LSCO/NSTO junction. The variation of the depletion layer is possibly different under the same applied bias voltages for the underdoped La 1.9 Sr 0.1 CuO 4/NSTO junction and overdoped La 1.8 Sr 0.2 CuO 4/NSTO junction due to the difference of carrier density at La 1.9 Sr 0.1 CuO 4 and La 1.8 Sr 0.2 CuO 4.

Growth of BN Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 235 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

ABSTRACTA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

Growth of Bn Thin Films by Pulsed Laser Deposition

1991 ◽  
Vol 236 ◽  
Author(s):  
J. A. Knapp
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Laser Wavelength ◽  
Laser Deposition ◽  
Strong Function ◽  
Ablation Plasma ◽  
Clean Sample

AbstractA new UHV system for pulsed laser deposition of materials is described, together with results from preliminary experiments for depositions of BN on Si. The system is designed to allow for in-situ diagnostics of the ablation plasma, as well as UHV preparation and characterization of clean sample substrates. The room temperature depositions of BN result in amorphous, B-rich films, whose particle content is a strong function of laser wavelength.

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