Dielectric characterization of transparent epitaxial Ga2O3 thin film on n-GaN∕Al2O3 prepared by pulsed laser deposition

2006 ◽  
Vol 89 (18) ◽  
pp. 182906 ◽  
Author(s):  
Sang-A Lee ◽  
Jae-Yeol Hwang ◽  
Jong-Pil Kim ◽  
Se-Young Jeong ◽  
Chae-Ryong Cho
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Dielectric Characterization ◽  
Ga2o3 Thin Film

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Studies of thin film ferroelectrics with charge-compensated substitutions in BST

2002 ◽  
Vol 720 ◽  
Author(s):  
Daniel Potrepka ◽  
Steven Tidrow ◽  
Arthur Tauber ◽  
Kevin Kirchner ◽  
Bernard Rod ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bulk Materials ◽  
Dielectric Characterization ◽  
Deposition Techniques

AbstractThin films were prepared from bulk targets by pulsed-laser deposition techniques. The targets were composed of Ba0.6Sr0.4TiO3 with charge-compensated substitutions for Ti4+. Results of the dielectric characterization measurements will be discussed and compared to the results of similar measurements in bulk materials with the same composition.

Preparation and Characterization of BiFeO3 Thin Film Deposited on ITO Substrate by Using Pulsed Laser Deposition

2011 ◽  
Vol 59 (3(1)) ◽  
pp. 2537-2541 ◽  
Author(s):  
Jungmin Park ◽  
Fumiya Gotoda ◽  
Seiji Nakashima ◽  
Takeshi Kanashima ◽  
Masanori Okuyama
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Bifeo3 Thin Film

Pulsed Laser Deposition and Characterization of InZnO Alloyed Thin Film

2008 ◽  
pp. 308-311
Author(s):  
F.K. Shan ◽  
G.X. Liu ◽  
Byoung Chul Shin ◽  
Won Jae Lee ◽  
W.T. Oh
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition

Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition

2006 ◽  
Vol 24 (4) ◽  
pp. 1623-1626 ◽  
Author(s):  
Artur Erlacher ◽  
Alejandra R. Lukaszew ◽  
Herbert Jaeger ◽  
Bruno Ullrich
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Texture Characterization

Electrical Characterization of YSZ/YSZ-NiO Grown by Pulsed Laser Deposition for Low Temperature Solid Oxide Fuel Cells

2013 ◽  
Vol 860-863 ◽  
pp. 807-811
Author(s):  
Wen De Liu ◽  
Zhen Feng Kang ◽  
Qiang Li ◽  
Ping Ping Zheng ◽  
Tie Zhu Ding
Keyword(s):  
Thin Film ◽  
Solid Oxide Fuel Cells ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Electrical Characterization ◽  
Laser Deposition ◽  
Conductivity Enhancement ◽  
Ysz Thin Film ◽  
Electrical Characterizations

This study is focused on the elaboration of 8 mol.% yttria stabilized zirconia (YSZ) thin films onto porous supporting NiOYSZ anode substrates using pulsed laser deposition (PLD),and their microstructural and electrical characterizations. Better crystallinity and grain connectivity is observed increasing the deposition temperature until best values are obtained at 500°C. The greater relative conductivity enhancement is found at 300-500°C. The observed an increased conductivity at lower temperatures may be caused by a combination of nanoscaled effect of the YSZ thin film and interfacial effects between YSZ thin film and substrate.

Sign in / Sign up

Export Citation Format

Share Document