Electronic Transport and the Density of States Distribution in a-(Si, Ge):H, F Alloys

1986 ◽  
Vol 70 ◽  
Author(s):  
S. Aljishi ◽  
Z E. Smith ◽  
D. Slobodin ◽  
J. Kolodzey ◽  
V. Chu ◽  
...  
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Density Of States ◽  
Electronic Transport ◽  
Silicon Germanium ◽  
Drift Mobility ◽  
Electronic And Optical Properties ◽  
Reported Data ◽  
Amorphous Silicon Germanium

ABSTRACTThe electronic and optical properties of amorphous silicon-germanium alloys produced by d.c. and r.f. glow discharge are reported. Data on the sub-gap absorption, dark and photo conductivities, drift mobilities and drift mobility-lifetime products are used to propose a density of states model.

Theoretical and X-ray spectral investigations of density of states in amorphous silicon-germanium layers

1987 ◽  
Vol 90 (1-3) ◽  
pp. 127-130
Author(s):  
E.P. Domashevskaya ◽  
E.N. Desyatirikova ◽  
A.F. Khokhlov ◽  
V.A. Terekhov ◽  
Yu.K. Timoshenko
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Germanium ◽  
X Ray ◽  
Amorphous Silicon Germanium

Electronic and optical properties of glow-discharge amorphous silicon-carbon alloys

1984 ◽  
Vol 49 (5) ◽  
pp. 489-501 ◽  
Author(s):  
J. Bullot ◽  
M. Gauthier ◽  
M. Schmidt ◽  
Y. Catherine ◽  
A. Zamouche
Keyword(s):  
Optical Properties ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Electronic And Optical Properties ◽  
Silicon Carbon

Light-Induced Degradation of Amorphous Silicon-Germanium Alloy Solar Cells Deposited at High Rates

1996 ◽  
Vol 420 ◽  
Author(s):  
S. Sugiyama ◽  
X. Xu ◽  
J. Yang ◽  
S. Guha
Keyword(s):  
Solar Cells ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Ion Bombardment ◽  
Ir Absorption ◽  
Film Properties ◽  
Deposition Rates ◽  
Rf Glow Discharge ◽  
Amorphous Silicon Germanium

AbstractWe have studied the light-induced degradation of amorphous silicon-germanium (a-SiGe:H) alloy single-junction solar cells with high initial performance deposited at high rates. The intrinsic layers were deposited using microwave (MW) glow-discharge technique at deposition rates between 10 and 40 Å/s. The results show that light-induced degradation of the cells is higher than that of cells deposited at low rates using RF glow-discharge technique, and it does not strongly depend on deposition rates over this range. The total hydrogen content and the ratio of Si-H2, Ge-H, and Ge-H2 to Si-H bonding estimated by infrared (IR) absorption in films are correlated with the cell degradation results. We have also investigated the effect of ionbombardment on film properties. Films with low ion-bombardment are more porous and have higher composition of Si-H2 and Ge-H2 bonding. Appropriate ion-bombardment makes denser structure in a-SiGe:H alloy films deposited at high rates. This improves the cell performance as well.

Infrared Spectroscopy of Deuterated a-Si, Ge:D, F Alloys Prepared by DC Glow Discharge Deposition

1986 ◽  
Vol 70 ◽  
Author(s):  
Y. Okada ◽  
D. Slobodin ◽  
S. F. Chou ◽  
R. Schwarz ◽  
S. Wagner
Keyword(s):  
Fourier Transform ◽  
Infrared Spectroscopy ◽  
Ir Spectroscopy ◽  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dc Glow Discharge ◽  
Thermochemical Equilibrium ◽  
Amorphous Silicon Germanium ◽  
Glow Discharge Deposition

ABSTRACTDeuterated and fluorinated amorphous silicon-germanium alloys, a-Si, Ge:D, F, were studied by Fourier transform infrared (IR) spectroscopy. No Ge.-F modes are observed. The intensity of the Si-F and Si-F2 modes increases with Ge concentration. So does thae intensity of SiF4 which is trapped as isolated molecules. No DF (IR) or F2 (Raman) is observed. The IR spectra of alloys annealed at 300, 400, 500 and 600° C show that the fluorine in the Si-F and Si-F2 groups and in the SiF4 molecules is in thermochemical equilibrium.

Hydrogenated Amorphous Silicon Germanium Alloys Prepared by Triode rf Glow Discharge

1986 ◽  
Vol 25 (Part 2, No. 4) ◽  
pp. L276-L278 ◽  
Author(s):  
Takeshige Ichimura ◽  
Takurou Ihara ◽  
Toshio Hama ◽  
Michio Ohsawa ◽  
Hiroshi Sakai ◽  
...  
Keyword(s):  
Glow Discharge ◽  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Rf Glow Discharge ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous ◽  
Silicon Germanium Alloys

Density of states in the pseudo‐gap of amorphous silicon‐germanium alloys from electrical and optical measurements

1992 ◽  
Vol 60 (12) ◽  
pp. 1465-1467 ◽  
Author(s):  
T. Pisarkiewicz ◽  
A. Kolodziej ◽  
E. Schabowska‐Osiowska ◽  
T. Stapinski ◽  
A. Rodzik ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Density Of States ◽  
Silicon Germanium ◽  
Optical Measurements ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys
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