Control of a-Si:H Film Properties by Phoyo-Assisted Plasma CVD

1986 ◽  
Vol 70 ◽  
Author(s):  
Nobuhiro Fkuda ◽  
Kenji Miyachi ◽  
Hirofumi Tanaka ◽  
Takashi Igarashi ◽  
Sadaaki Yamamyto
Keyword(s):  
Laser Irradiation ◽  
Optical Bandgap ◽  
Primary Effect ◽  
Heating Effect ◽  
Plasma Cvd ◽  
Film Properties ◽  
Substrate Heating ◽  
Bandgap Narrowing

ABSTRACTCO2 laser irradiation onto growing a-Si:H surface caused a decrease of the optical bandgap down to 1.63 eV and a significant increase of the photosensivity. Primary effect of the laser irradiation was a conventional substrate heating, while the optical bandgap narrowing could not be explained by heating effect alone.

Substrate heating effect on the growth of a CdTe film on an InSb substrate by vacuum evaporation

1991 ◽  
Vol 251-252 ◽  
pp. 524-528
Author(s):  
Chen Jiann-Ruey ◽  
Houng Mau-Phon ◽  
Jenq Fenq-Lin ◽  
Fang Chien-Shyong ◽  
Tse Wan-Sun
Keyword(s):  
Cdte Film ◽  
Vacuum Evaporation ◽  
Heating Effect ◽  
Substrate Heating

Properties of Doped a-Si:H Films Deposited by Ecr Plasma CVD

1990 ◽  
Vol 204 ◽  
Author(s):  
H. Murai ◽  
M. Hayama ◽  
K. Kobayashi ◽  
T. Yamazaki
Keyword(s):  
Electron Cyclotron Resonance ◽  
Optical Emission ◽  
Dark Conductivity ◽  
Deposition Condition ◽  
Plasma Cvd ◽  
Film Properties ◽  
Plasma Properties ◽  
Hydrogen Incorporation ◽  
Ecr Plasma ◽  
Hydrogenated Amorphous

ABSTRACTPhosphorous doped hydrogenated amorphous silicon films were deposited by microwave electron cyclotron resonance (ECR) plasma CVD at a substrate temperature of 100°C. Electrical, optical and hydrogen-incorporation properties of the films have been investigated. By optimizing the deposition condition, the dark conductivity of 3×10−4S/cm is realized without subsequent annealing. Relations between the film properties and ECR plasma properties have been studied by means of optical emission spectroscopy (OES) and quadrupole mass spectroscopy (QMS).

scholarly journals Spatially Resolved Optoelectronic Properties of Al-Doped Zinc Oxide Thin Films Deposited by Radio-Frequency Magnetron Plasma Sputtering Without Substrate Heating

Nanomaterials ◽  
2019 ◽  
Vol 10 (1) ◽  
pp. 14 ◽  
Author(s):  
Eugen Stamate
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spatial Resolution ◽  
Negative Ions ◽  
Negative Ion ◽  
Soda Lime Glass ◽  
Plasma Parameters ◽  
Film Properties ◽  
Substrate Heating

Transparent and conducting thin films were deposited on soda lime glass by RF magnetron sputtering without intentional substrate heating using an aluminum doped zinc oxide target of 2 inch in diameter. The sheet resistance, film thickness, resistivity, averaged transmittance and energy band gaps were measured with 2 mm spatial resolution for different target-to-substrate distances, discharge pressures and powers. Hall mobility, carrier concentration, SEM and XRD were performed with a 3 mm spatial resolution. The results reveal a very narrow range of parameters that can lead to reasonable resistivity values while the transmittance is much less sensitive and less correlated with the already well-documented negative effects caused by a higher concentration of oxygen negative ions and atomic oxygen at the erosion tracks. A possible route to improve the thin film properties requires the need to reduce the oxygen negative ion energy and investigate the growth mechanism in correlation with spatial distribution of thin film properties and plasma parameters.

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