Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering

2007 ◽  
Vol 90 (13) ◽  
pp. 132109 ◽  
Author(s):  
S. P. Dash ◽  
D. Goll ◽  
H. D. Carstanjen
Keyword(s):  
High Resolution ◽  
Room Temperature ◽  
Rutherford Backscattering ◽  
Stages Of Growth

A Liquid Nitrogen Cooled Stage for STEM

1974 ◽  
Vol 32 ◽  
pp. 444-445
Author(s):  
Louis T. Germinario
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Liquid Nitrogen ◽  
Room Temperature ◽  
Objective Lens ◽  
Thermal Drift ◽  
Specimen Holder ◽  
Resolution Capability ◽  
Focal Position

A liquid nitrogen stage has been developed for the JEOL JEM-100B electron microscope equipped with a scanning attachment. The design is a modification of the standard JEM-100B SEM specimen holder with specimen cooling to any temperatures In the range ~ 55°K to room temperature. Since the specimen plane is maintained at the ‘high resolution’ focal position of the objective lens and ‘bumping’ and thermal drift la minimized by supercooling the liquid nitrogen, the high resolution capability of the microscope is maintained (Fig.4).

High-Resolution Scanning Electron Microscopy of Biological Specimens

1988 ◽  
Vol 46 ◽  
pp. 186-187
Author(s):  
M. Müller ◽  
R. Hermann
Keyword(s):  
High Resolution ◽  
Freeze Drying ◽  
Room Temperature ◽  
Structural Information ◽  
Freeze Substitution ◽  
Critical Point Drying ◽  
Sem Study ◽  
Major Factors ◽  
Structural Preservation ◽  
Preparation Techniques

Three major factors must be concomitantly assessed in order to extract relevant structural information from the surface of biological material at high resolution (2-3nm).Procedures based on chemical fixation and dehydration in graded solvent series seem inappropriate when aiming for TEM-like resolution. Cells inevitably shrink up to 30-70% of their initial volume during gehydration; important surface components e.g. glycoproteins may be lost. These problems may be circumvented by preparation techniques based on cryofixation. Freezedrying and freeze-substitution followed by critical point drying yields improved structural preservation in TEM. An appropriate preservation of dimensional integrity may be achieved by freeze-drying at - 85° C. The sample shrinks and may partially collapse as it is warmed to room temperature for subsequent SEM study. Observations at low temperatures are therefore a necessary prerequisite for high fidelity SEM. Compromises however have been unavoidable up until now. Aldehyde prefixation is frequently needed prior to freeze drying, rendering the sample resistant to treatment with distilled water.

Transition Insulator-Metal and Antiferromagnetic-Paramagnetic Cu Doped in La0.47Ca0.53MnO3

2015 ◽  
Vol 1123 ◽  
pp. 73-77 ◽  
Author(s):  
Yohanes Edi Gunanto ◽  
K. Sinaga ◽  
B. Kurniawan ◽  
S. Poertadji ◽  
H. Tanaka ◽  
...  
Keyword(s):  
High Resolution ◽  
Low Temperature ◽  
Magnetic Structure ◽  
Room Temperature ◽  
Paramagnetic Phase ◽  
Perovskite Manganites ◽  
Antiferromagnetic Phase ◽  
Temperature Transition ◽  
Cu Doping ◽  
Metal State

The study of the perovskite manganites La0.47Ca0.53Mn1-xCuxO3 with x = 0, 0.06, 0.09, and 0.13 has been done. The magnetic structure was determined using high-resolution neutron scattering at room temperature and low temperature. All samples were paramagnetic at room temperature and antiferromagnetic at low temperature. Using the SQUID Quantum Design, the samples showed that the doping of the insulating antiferromagnetic phase La0.47Ca0.53MnO3 with Cu doping resulted in the temperature transition from an insulator to metal state, and an antiferromagnetic to paramagnetic phase. The temperature transition from an insulator to metal state ranged from 23 to 100 K and from 200 to 230 K for the transition from an antiferromagnetic to paramagnetic phase.

Metastable Solid Solutions of Impurities in Silicon

1981 ◽  
Vol 7 ◽  
Author(s):  
J. S. Williams ◽  
K. T. Short
Keyword(s):  
High Resolution ◽  
Solid Solutions ◽  
Impurity Concentration ◽  
Rutherford Backscattering ◽  
Equilibrium Solubility ◽  
Furnace Annealing ◽  
Strain Effects ◽  
Crystal Boundary ◽  
Silicon Lattice ◽  
Supersaturated Solid Solutions

ABSTRACTHigh resolution Rutherford backscattering and channeling techniques have been used to investigate the formation and stability of supersaturated solid solutions of As, Sb, In, Pb, Tℓ and Bi implants in (100) silicon. In all cases nearsubstitutional solid solubilities far exceeding maximum equilibrium solubility limits can be achieved by furnace annealing at temperatures ≤ 600°C. Details of the recrystallisation process indicate that the maximum impurity concentration which can be incorporated onto silicon lattice sites may be controlled by impurity size and associated strain effects at the amorphous-crystal boundary during epitaxial regrowth.

The crystal structures of solvent-free alkali-metal squarates from powder diffraction data

2005 ◽  
Vol 220 (11) ◽  
Author(s):  
Robert E. Dinnebier ◽  
Hanne Nuss ◽  
Martin Jansen
Keyword(s):  
High Resolution ◽  
Alkali Metal ◽  
Crystal Structures ◽  
Powder Diffraction ◽  
Diffraction Data ◽  
Room Temperature ◽  
Solvent Free ◽  
Crystallographic Data ◽  
Powder Diffraction Data ◽  
X Ray

AbstractThe crystal structures of solvent-free lithium, sodium, rubidium, and cesium squarates have been determined from high resolution synchrotron and X-ray laboratory powder patterns. Crystallographic data at room temperature of Li

Electrical and Structural Properties of Al-Implanted and Annealed 4H-SiC

2007 ◽  
Vol 556-557 ◽  
pp. 343-346 ◽  
Author(s):  
M. Obernhofer ◽  
Michael Krieger ◽  
Frank Schmid ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
...  
Keyword(s):  
Hall Effect ◽  
Structural Properties ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering ◽  
Electrical Activation ◽  
Implantation Damage ◽  
Aluminum Ions

Aluminum ions (Al+) were implanted at room temperature or at 500°C into n-type 4HSiC. The implantation damage (displaced Si atoms) and the electrical activation of Al+ ions (concentration of Al acceptors) were determined by Rutherford backscattering in channeling mode and Hall effect, respectively, as a function of the annealing temperature.

Sign in / Sign up

Export Citation Format

Share Document