A Novel Silicon-Carbon Precursor for Oligomer Chemical Vapor Deposition of Silicon Carbide for Harsh Environmental Applications

2001 ◽  
Vol 697 ◽  
Author(s):  
Ulrike Futschik ◽  
Harry Efstathiadis ◽  
James Castracane ◽  
Alain E. Kaloyeros ◽  
Leo Macdonald ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Nuclear Reaction Analysis ◽  
Silicon Carbon ◽  
Halogen Free ◽  
Substrate Temperatures ◽  
Sic Films

AbstractSilicon carbide (SiC) films have been successfully deposited on various substrates by oligomer thermal chemical vapor deposition (OTCVD) from a novel, halogen free, oligomer precursor family of polysilyenemethylenes (PSMs) called SP-4000. The high quality films were grown at substrate temperatures in the range of 620°C to 850°C and at process pressures in the range of 1 - 200Torr. SP-4000 is a silicon carbide precursor with formula [-SiH2-CH2-]n, n=2-8, composed of an alternating silicon and carbon backbone with hydrogen side groups. Depositions on Si and graphite substrates yielded SiC films with Si/C ratios in the range 1.1 to 1.2 and thicknesses in the range 0.3 to 50μm.Structural and chemical characterizations were performed by Auger electron spectroscopy (AES), x-ray diffraction (XRD), nuclear reaction analysis (NRA), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM).The SiC coatings deposited at substrate temperatures below 1100°C were found to be amorphous. Ex-situ, post deposition annealing in inert gas ambient above 1100°C converted the SiC films to a polycrystalline phase.

Hot-mesh Chemical Vapor Deposition for 3C-SiC Growth on Si and SiO2

2005 ◽  
Vol 862 ◽  
Author(s):  
Kanji Yasui ◽  
Jyunpei Eto ◽  
Yuzuru Narita ◽  
Masasuke Takata ◽  
Tadashi Akahane
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
Mesh Structure ◽  
X Ray ◽  
Si Substrates ◽  
Substrate Temperatures ◽  
Sic Films

AbstractThe crystal growth of SiC films on (100) Si and thermally oxidized Si (SiO2/Si) substrates by hot-mesh chemical vapor deposition (HMCVD) using monomethylsilane as a source gas was investigated. A mesh structure of hot tungsten (W) wire was used as a catalyzer. At substrate temperatures above 750°C and at a mesh temperature of 1600°C, 3C-SiC crystal was epitaxially grown on (100) Si substrates. From the X-ray rocking curve spectra of the (311) peak, SiC was also epitaxially grown in the substrate plane. On the basis of the X-ray diffraction (XRD) measurements, on the other hand, the growth of (100)-oriented 3C-SiC films on SiO2/Si substrates was determined to be achieved at substrate temperatures of 750-800°C, while polycrystalline SiC films, at substrate temperatures above 850°C. From the dependence of growth rate on substrate temperature and W-mesh temperature, the growth mechanism of SiC crystal by HMCVD was discussed.

Degradation in Euv Reflectance of Ion-Sputtered Sic Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Dan Schwarcz ◽  
Ritva A.M. Keski-Kuha
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Extreme Ultraviolet ◽  
Chemical Vapor ◽  
Optical Components ◽  
Optical Surfaces ◽  
Sic Films

AbstractSilicon Carbide (SiC) formed by chemical vapor deposition (CVD) has the highest reflectivity in the extreme ultraviolet (EUV) of any currently used optical material. The high temperature required for the CVD process, however, limits its suitability for coating optical components. To address this problem thin films have been sputtered onto optical surfaces from CVD βSiC targets. These films, while having reflectivity lower than that of CVD SiC, are nonetheless the best coatings available for reflectance in the spectral region below 1000À. While the initial properties are good, the EUV reflectivity degrades with time after deposition. A relative decrease of about 25% is evident in the reflectivity at 920Â after 2.5 years, and about 85% of this change occurs in the first three months. In fact, a decrease is observed in the minutes following deposition. In this study the degradation is characterized and a mechanism is proposed. Efforts underway to reduce or eliminate the degradation are discussed.

Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures

2002 ◽  
Vol 742 ◽  
Author(s):  
Spyros Gallis ◽  
Ulrike Futschik ◽  
James Castracane ◽  
Alain E. Kaloyeros ◽  
Harry Efstathiadis ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Protective Coatings ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Systems ◽  
Sic Films

ABSTRACTAmorphous silicon carbide (SiC) films were deposited on silicon substrates by thermal chemical vapor deposition (TCVD) technique, at substrate temperatures ranging from 620 °C - 850 °C. A novel, single-source halide free precursor, SP-4000, belonging to the family of polysilenemethylenes (PSM) (nominal structure [-SiH2-CH2-]n, n = 2–8 including branched and cyclic isomers) was used as source. Argon was used, as both the precursor carrier gas and the dilution gas. Other reactants, such as hydrogen or hydrocarbons, were not used. The deposition yielded films with Si/C ratio of 1±0.2. The highest achieved growth rate was 83 nm/min.The modulus of elasticity and the nanohardness of the SiC films were measured with the aid of a nanoindenter at various depths, which did not exceed 25% of the film thickness. The average nanohardness at indentation depths of approximately 10% of the film thickness was measured up to 13 ± 4 GPa. The results of the nanoindentation will be discussed in conjunction with the microstructural analysis of the films.In addition, the development of a viable TCVD SiC process presents significant opportunities in the nano/micro systems field. In particular, the ability to custom tailor the surfaces of microfluidic structures allows for the development of valves, pumps and channels for use in corrosive or high temperature environments. Initial results from the deposition of SiC films on prototype microfluidic components will be presented.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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