ChemInform Abstract: THERMODYNAMIC ANALYSIS AND KINETIC IMPLICATIONS OF CHEMICAL VAPOR DEPOSITION OF SILICON CARBIDE FROM SILICON-CARBON-CHLORINE-HYDROGEN GAS SYSTEMS

1985 ◽  
Vol 16 (26) ◽  
Author(s):  
G. S. FISCHMAN ◽  
W. T. PETUSKEY
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Thermodynamic Analysis ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Silicon Carbon

A Novel Silicon-Carbon Precursor for Oligomer Chemical Vapor Deposition of Silicon Carbide for Harsh Environmental Applications

2001 ◽  
Vol 697 ◽  
Author(s):  
Ulrike Futschik ◽  
Harry Efstathiadis ◽  
James Castracane ◽  
Alain E. Kaloyeros ◽  
Leo Macdonald ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Nuclear Reaction Analysis ◽  
Silicon Carbon ◽  
Halogen Free ◽  
Substrate Temperatures ◽  
Sic Films

AbstractSilicon carbide (SiC) films have been successfully deposited on various substrates by oligomer thermal chemical vapor deposition (OTCVD) from a novel, halogen free, oligomer precursor family of polysilyenemethylenes (PSMs) called SP-4000. The high quality films were grown at substrate temperatures in the range of 620°C to 850°C and at process pressures in the range of 1 - 200Torr. SP-4000 is a silicon carbide precursor with formula [-SiH2-CH2-]n, n=2-8, composed of an alternating silicon and carbon backbone with hydrogen side groups. Depositions on Si and graphite substrates yielded SiC films with Si/C ratios in the range 1.1 to 1.2 and thicknesses in the range 0.3 to 50μm.Structural and chemical characterizations were performed by Auger electron spectroscopy (AES), x-ray diffraction (XRD), nuclear reaction analysis (NRA), Fourier transform infrared spectroscopy (FTIR), and scanning electron microscopy (SEM).The SiC coatings deposited at substrate temperatures below 1100°C were found to be amorphous. Ex-situ, post deposition annealing in inert gas ambient above 1100°C converted the SiC films to a polycrystalline phase.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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