Material Characterization by Contactless Photoconductivity Measurements

1986 ◽  
Vol 69 ◽  
Author(s):  
M. Kunst ◽  
A. Werner
Keyword(s):  
Crystalline Silicon ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Transient Photoconductivity ◽  
Different Types ◽  
Intimate Relation ◽  
Hydrogenated Amorphous ◽  
Excellent Tool

AbstractTransient photoconductivity measurements with the time-resolved microwave conductivity (TRMC) method have been applied to three different types of semiconductors: hydrogenated amorphous silicon, single crystalline silicon and GaAs/GaAlAs multiple quantum well structures. Analysis of the signals in terms of charge carrier-lattice interaction points to an intimate relation between TRMC signals and intrinsic material properties. It is shown that the TRMC-technique is an excellent tool to characterize photosensitive materials.

scholarly journals Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl
Keyword(s):  
Quantum Well ◽  
Electric Field Distribution ◽  
Theoretical Calculations ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Piezoelectric Field ◽  
Piezoelectric Fields ◽  
Time Resolved Photoluminescence

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.

Time Resolved Photoluminescence from Patterned GaAs/AlGaAs Multiple Quantum Well Structures

1993 ◽  
Vol 326 ◽  
Author(s):  
Xuelong Cao ◽  
Ahn Goo Choo ◽  
L. M. Smith ◽  
Howard E. Jackson ◽  
P. Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Time Resolved Photoluminescence

Study of hydrogenation in GaSb/AlSb multiple quantum well structures by time‐resolved luminescence

1989 ◽  
Vol 55 (8) ◽  
pp. 772-774 ◽  
Author(s):  
M. Capizzi ◽  
C. Coluzza ◽  
A. Frova ◽  
U. Cebulla ◽  
A. Forchel
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures

Time-resolved x-ray excited optical luminescence in InGaN/GaN multiple quantum well structures

2011 ◽  
Vol 109 (12) ◽  
pp. 124906 ◽  
Author(s):  
S. M. O’Malley ◽  
P. Revesz ◽  
A. Kazimirov ◽  
A. A. Sirenko
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
X Ray ◽  
Optical Luminescence

TIME-RESOLVED RAMAN STUDIES OF NON-EQUILIBRIUM EXCITATIONS IN GaAs-AlAs AND GaAs-AlxGa1−xAs MULTIPLE QUANTUM WELL STRUCTURES

1992 ◽  
Vol 06 (12) ◽  
pp. 703-716 ◽  
Author(s):  
K. T. TSEN
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Carrier Dynamics ◽  
Multiple Quantum ◽  
Electron Hole ◽  
Photoexcited Electron ◽  
Time Resolved ◽  
Quantum Well Structures ◽  
Hot Carrier ◽  
Electron Hole Plasma

Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.

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