The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.
Recent experimental results obtained from time-resolved Raman studies in GaAs-AlAs and GaAs-Al x Ga 1−x As multiple quantum well structures are reviewed. Particular emphasis is made on (1) electron-phonon and phonon-phonon interactions and their association with the hot-phonon effects in the hot-carrier dynamics of multiple quantum well structures; and (2) the transport properties of photoexcited electron-hole plasma and excitons in semiconductor multiple quantum well structures.
Electric Field Distribution in strained p-i-n GaN/InGaN multiple quantum well structures.