Relative Lattice Parameter Measurement in Quaternary (InGaAsP) Layers on InP Substrates Using Convergent Beam Electron Diffraction

1986 ◽  
Vol 69 ◽  
Author(s):  
M. E. Twigg ◽  
S. N. G. Chu ◽  
D. C. Joy ◽  
D. M. Maher ◽  
A. T. Macrander ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
X Ray Diffraction ◽  
Device Structure ◽  
Beam Electron ◽  
X Ray ◽  
Convergent Beam ◽  
Relative Change ◽  
Inp Substrates

AbstractWith X-ray diffraction techniques, it is possible to routinely measure lattice parameters to several parts in 104 for macroscopic specimens. However, measurements of lattice parameter changes for quaternary (InGaAsP) device structures several microns in width are not usually feasible with X-ray diffraction techniques. Convergent Beam Electron Diffraction (CBED), which is one of the techniques available on a modern transmission electron microscope (TEM), may be sensitive to these small, localized lattice parameter changes. Unfortunately, dynamical diffraction effects prevent direct extraction of changes in the lattice parameter from CBED patterns which are obtained from high atomic number materials. For this reason, we have chosen to calibrate the relative position of CBED features with X-ray lattice parameter measurements which were obtained from planar quaternary layers grown on InP substrates. For the active quaternary region of an electro-optical device structure, it is shown that this approach may be sensitive to a relative change in the lattice parameter as small as ±2 parts in 104, which is the uncertainty in the X-ray calibration measurements.

Measurement of Debye-Waller factors of silicon as a function of temperature using energy-filtered CBED rocking-curve technique

1994 ◽  
Vol 52 ◽  
pp. 996-997
Author(s):  
S. Swaminathan ◽  
S. Altynov ◽  
I. P. Jones ◽  
N. J. Zaluzec ◽  
D. M. Maher ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Liquid Nitrogen Temperature ◽  
Convergent Beam Electron Diffraction ◽  
Higher Order ◽  
X Ray Diffraction ◽  
Beam Electron ◽  
X Ray ◽  
Crystal Potential ◽  
Transmission Electron ◽  
Convergent Beam

The advantages of quantitative Convergent Beam Electron Diffraction (CBED) method for x-ray structure factor determination have been reviewed by Spence. The CBED method requires accurate values of Debye-Waller (D-W) factors for the estimation of the coefficients of crystal potential of the higher order beams, Vg, the calculation of the absorption potential, V′g using the Einstein model for phonons, and finally the conversion of the fitted values of the coefficients of crystal potential, V″, to x-ray structure factors. Debye-Waller factors are conventionally determined by neutron or x-ray diffraction methods. Because of the difficulties in conducting high temperature neutron and x-ray diffraction experiments, D-W factors are rarely measured at temperatures above room temperature. Debye-Waller factors at high temperatures can be determined by Convergent Beam Electron diffraction (CBED) method using Transmission Electron Microscopy (TEM) employed with a hot stage attachment. Recently Holmestad et al. have attempted to measure the D-W factors by matching the energy-filtered Higher Order Laue Zone (HOLZ) line intensities near liquid nitrogen temperature.

Application of convergent-beam electron diffraction to the detection of lattice parameter changes in hexagonal close-packed metals

1983 ◽  
Vol 41 ◽  
pp. 258-259
Author(s):  
V. L. Kohler ◽  
C. G. Shelton ◽  
Brian Ralph
Keyword(s):  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Beam Electron ◽  
Hexagonal Close Packed ◽  
Dispersion Surface ◽  
Cubic Materials ◽  
Convergent Beam

Convergent beam electron diffraction (CBED) patterns have been used in several different applications to materials problems (summarised by Steeds) and has more recently been used to quantify shifts in the lattice parameters of cubic materials (e.g. 2). This technique has proved highly sensitive to such changes, capable, via the use of very simple geometrical computer simulations, of the detection and quantification of changes in lattice parameters of hexagonal alloys.Alloy systems based on zinc and titanium were used. A simple geometrical computer simulation was used to quantify the shifts, ignoring dispersion surface effects, in the higher order Laue zone (HOLZ) lines upon change in the lattice parameters. X-ray diffraction data from each of the alloys was obtained to provide a standard for comparison. The sensitivity of each zone axis pattern to changes in either a or c was determined from the magnitude of the HOLZ line shifts in the CBED pattern.

Comparison of Simulated and Experimental Order Parameters in FePt—II

2011 ◽  
Vol 17 (3) ◽  
pp. 403-409 ◽  
Author(s):  
Karen L. Torres ◽  
Richard R. Vanfleet ◽  
Gregory B. Thompson
Keyword(s):  
Electron Diffraction ◽  
Order Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Order Parameters ◽  
X Ray Diffraction ◽  
Chemical Order ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Convergent Beam ◽  
Good Agreement

AbstractEight FePt thin film specimens of various thicknesses, compositions, and order parameters have been analyzed to determine the robustness and fidelity of multislice simulations in determining the chemical order parameter via electron diffraction (ED). The shape of the simulated curves depends significantly on the orientation and thickness of the specimen. The ED results are compared to kinematical scattering order parameters, from the same films, acquired from synchrotron X-ray diffraction (XRD). For the specimens analyzed with convergent beam electron diffraction conditions, the order parameter closely matched the order parameter as determined by the XRD methodology. However, the specimens analyzed by selected area electron diffraction conditions did not show good agreement. This has been attributed to substrate effects that hindered the ability to accurately quantify the intensity values of the superlattice and fundamental reflections.

Measurement of Thermally-Induced Strains in Polycrystalline Al Thin Films on Si Using Convergent Beam Electron Diffraction

1994 ◽  
Vol 343 ◽  
Author(s):  
S. K. Streiffer ◽  
S. Bader ◽  
C. Deininger ◽  
J. Mayer ◽  
M. Rühle
Keyword(s):  
Electron Diffraction ◽  
Ccd Camera ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Thermally Induced ◽  
Beam Electron ◽  
Texture Model ◽  
Refinement Procedure ◽  
Convergent Beam ◽  
Line Positions

ABSTRACTStrains in polycrystalline Al films grown on oxidized Si wafers were measured using convergent beam electron diffraction (CBED). CBED patterns were acquired on a Zeiss EM 912 TEM equipped with an imaging energy filter and CCD camera. HOLZ line positions in the (000) CBED disk were matched using an automated refinement procedure. A sensitivity to variations in lattice parameter of approximately 0.00007 nm was obtained. Strong deviations from a simple equibiaxial strain, perfect [111] texture model were observed.

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