Measurement of Thermally-Induced Strains in Polycrystalline Al Thin Films on Si Using Convergent Beam Electron Diffraction
Keyword(s):
ABSTRACTStrains in polycrystalline Al films grown on oxidized Si wafers were measured using convergent beam electron diffraction (CBED). CBED patterns were acquired on a Zeiss EM 912 TEM equipped with an imaging energy filter and CCD camera. HOLZ line positions in the (000) CBED disk were matched using an automated refinement procedure. A sensitivity to variations in lattice parameter of approximately 0.00007 nm was obtained. Strong deviations from a simple equibiaxial strain, perfect [111] texture model were observed.
1989 ◽
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2004 ◽
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2008 ◽
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1992 ◽
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1994 ◽
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