Optical Characterization of Mg- and Si-Implanted GaN

2001 ◽  
Vol 680 ◽  
Author(s):  
James A. Fellows ◽  
Yung Kee Yeo ◽  
Robert L. Hengehold ◽  
Leonid Krasnobaev
Keyword(s):  
Room Temperature ◽  
Deep Acceptor ◽  
Native Defects ◽  
Implantation Temperature ◽  
Luminescence Peak ◽  
Activation Efficiency ◽  
Deep Donor ◽  
Hall Effect Measurements ◽  
Anneal Temperature

ABSTRACTThe optical and electrical properties of Mg- and Si-implanted GaN were investigated using photoluminescence, cathodoluminescence, and Hall-effect measurements. Implantation of Mg, Si, Mg+Si, Mg+O, Mg+C, and Mg+P was made into undoped semi-insulating MBE-grown GaN at energies from 125 to 260 keV at room temperature and 800 oC with doses of 1x1014 to 5x1015 cm−2. The samples were capped with AlN and annealed at temperatures ranging from 1100 to 1300 oC for 9 s to 20 min. The dominant luminescence peak in all Mg-implanted and annealed GaN is a broad green luminescence (GL) band at 2.36 eV, which may be related to a deep donor-deep acceptor complex transition resulting from the Mg implant, residual implant damage, and/or native defects. The relative intensities of this GL band and secondary peaks from 2.75-3.28 eV vary as a function of implantation temperature, ion dose, species, and anneal temperature. All Mg single and dual implantation resulted in extremely resistive GaN layers, except Mg+Si, which resulted in weakly n-type GaN. However, the Si-implanted GaN produced an electrical activation efficiency as high as 73% after annealing at 1200 oC for 5 min.

Electrical and Optical Studies of Si-Implanted GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
James A. Fellows ◽  
Yung Kee Yeo ◽  
Robert L. Hengehold ◽  
Leonid Krasnobaev
Keyword(s):  
Room Temperature ◽  
Electrical Activation ◽  
Electrical And Optical Properties ◽  
Implantation Temperature ◽  
Activation Efficiency ◽  
Hall Effect Measurements ◽  
Comparison Of The Results ◽  
Anneal Temperature ◽  
Activation Behavior ◽  
Different Doses

AbstractThe electrical and optical properties of Si-implanted GaN have been investigated as a function of ion dose, anneal temperature, and implantation temperature using Hall-effect measurements and photoluminescence. Implantation of 200 keV Si ions was made at room temperature and 800°C into MBE-grown GaN capped with 500 Å AlN at six different doses ranging from 1x1013 to 5x1015 cm-2. The samples were proximity cap annealed from 1050 to 1350°C for 5 min to 20 s using either a conventional furnace or rapid thermal annealing. For a given dose, electrical activation efficiencies and mobilities increase as the anneal temperature increases from 1050 to 1350°C. Generally, the higher the dose, the greater the activation efficiency for any given anneal temperature. For a sample implanted with a dose of 1x1015 cm-2 and annealed at 1350°C for 20 s, an electrical activation efficiency of 100% was obtained. Exceptional carrier concentrations and mobilities were obtained on all Si-implanted samples, and a comparison of the results was made between room temperature and 800°C implantation. Photoluminescence measurements were also performed in an effort to better understand the electrical activation behavior of the Si implants in GaN.

PHOTOLUMINESCENCE FROM SILICON NANO-PARTICLES SYNTHESIZED BY PULSED LASER ABLATION

2003 ◽  
Vol 17 (03) ◽  
pp. 121-129 ◽  
Author(s):  
V. NARAYANAN ◽  
R. K. THAREJA
Keyword(s):  
Laser Fluence ◽  
Room Temperature ◽  
Silicon Nanoparticles ◽  
Nano Particles ◽  
Ambient Atmosphere ◽  
Luminescence Peak ◽  
Ion Laser ◽  
The Mean ◽  
Deposited Films

We report on the synthesis and characterization of silicon nanoparticles by ablating silicon wafer in an ambient atmosphere of helium at 1 Torr. The mean cluster size ranging from 1.8 nm to 4.4 nm deposited on silicon substrate at room temperature is observed to depend on the laser fluence. The size of the nanoparticles decreases with laser fluence. Photoluminescence of the deposited films using Nd:YAG laser and Ar + ion laser at 355 nm and 457.9 nm respectively shows emission peaks at 1.7, 2.2, and 2.7 eV. The luminescence peak at 2.2 eV and 2.7 eV are attributed to oxygen related impurities and the peak at 1.7 eV is attributed to quantum confinement.

Characterization of intergranular cuprous oxide in polycrystalline YBa2Cu3O7-x

1988 ◽  
Vol 46 ◽  
pp. 880-881
Author(s):  
Bradley L. Thiel ◽  
Chan Han R. P. ◽  
Kurosky L. C. Hutter ◽  
I. A. Aksay ◽  
Mehmet Sarikaya
Keyword(s):  
Grain Boundary ◽  
Cuprous Oxide ◽  
Room Temperature ◽  
Boundary Phase ◽  
Spectroscopic Techniques ◽  
Transition Width ◽  
Practical Applications ◽  
Thin Foils ◽  
Superconducting Oxides

The identification of extraneous phases is important in understanding of high Tc superconducting oxides. The spectroscopic techniques commonly used in determining the origin of superconductivity (such as RAMAN, XPS, AES, and EXAFS) are surface-sensitive. Hence a grain boundary phase several nanometers thick could produce irrelevant spectroscopic results and cause erroneous conclusions. The intergranular phases present a major technological consideration for practical applications. In this communication we report the identification of a Cu2O grain boundary phase which forms during the sintering of YBa2Cu3O7-x (1:2:3 compound).Samples are prepared using a mixture of Y2O3. CuO, and BaO2 powders dispersed in ethanol for complete mixing. The pellets pressed at 20,000 psi are heated to 950°C at a rate of 5°C per min, held for 1 hr, and cooled at 1°C per min to room temperature. The samples show a Tc of 91K with a transition width of 2K. In order to prevent damage, a low temperature stage is used in milling to prepare thin foils which are then observed, using a liquid nitrogen holder, in a Philips 430T at 300 kV.

scholarly journals Synthesis and characterization of a new ZIF-67@MgAl2O4 nanocomposite and its adsorption behaviour

RSC Advances ◽  
2021 ◽  
Vol 11 (22) ◽  
pp. 13245-13255
Author(s):  
Mehdi Davoodi ◽  
Fatemeh Davar ◽  
Mohammad R. Rezayat ◽  
Mohammad T. Jafari ◽  
Mehdi Bazarganipour ◽  
...  
Keyword(s):  
Room Temperature ◽  
Magnesium Aluminate ◽  
Synthesis And Characterization ◽  
Magnesium Aluminate Spinel ◽  
Adsorption Behaviour ◽  
Zeolitic Imidazolate Framework ◽  
Simple Method

New nanocomposite of zeolitic imidazolate framework-67@magnesium aluminate spinel (ZIF-67@MgAl2O4) has been fabricated by a simple method at room temperature with different weight ratios.

Processing by Pulsed Laser Deposition and Structural, Morphological and Chemical Characterization of Bi-Pb-Sr-Ca-Cu-O and Bi-Pb-Sb-Sr-Ca-Cu-O Thin Films

2010 ◽  
Vol 75 ◽  
pp. 202-207
Author(s):  
Victor Ríos ◽  
Elvia Díaz-Valdés ◽  
Jorge Ricardo Aguilar ◽  
T.G. Kryshtab ◽  
Ciro Falcony
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
Pulsed Laser ◽  
Chemical Characterization ◽  
Laser Deposition ◽  
Nominal Composition ◽  
Deposition Parameters ◽  
The Relationship

Bi-Pb-Sr-Ca-Cu-O (BPSCCO) and Bi-Pb-Sb-Sr-Ca-Cu-O (BPSSCCO) thin films were grown on MgO single crystal substrates by pulsed laser deposition. The deposition was carried out at room temperature during 90 minutes. A Nd:YAG excimer laser ( = 355 nm) with a 2 J/pulse energy density operated at 30 Hz was used. The distance between the target and substrate was kept constant at 4,5 cm. Nominal composition of the targets was Bi1,6Pb0,4Sr2Ca2Cu3O and Bi1,6Pb0,4Sb0,1Sr2Ca2Cu3OSuperconducting targets were prepared following a state solid reaction. As-grown films were annealed at different conditions. As-grown and annealed films were characterized by XRD, FTIR, and SEM. The films were prepared applying an experimental design. The relationship among deposition parameters and their effect on the formation of superconducting Bi-system crystalline phases was studied.

scholarly journals Synthesis and Characterization of Lithium-Ion Conductive LATP-LaPO4 Composites Using La2O3 Nano-Powder

Materials ◽  
2021 ◽  
Vol 14 (13) ◽  
pp. 3502
Author(s):  
Fangzhou Song ◽  
Masayoshi Uematsu ◽  
Takeshi Yabutsuka ◽  
Takeshi Yao ◽  
Shigeomi Takai
Keyword(s):  
Room Temperature ◽  
Conduction Mechanism ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
Temperature Conductivity ◽  
Room Temperature Conductivity ◽  
X Ray ◽  
Nano Powder ◽  
Powder Addition

LATP-based composite electrolytes were prepared by sintering the mixtures of LATP precursor and La2O3 nano-powder. Powder X-ray diffraction and scanning electron microscopy suggest that La2O3 can react with LATP during sintering to form fine LaPO4 particles that are dispersed in the LATP matrix. The room temperature conductivity initially increases with La2O3 nano-powder addition showing the maximum of 0.69 mS∙cm−1 at 6 wt.%, above which, conductivity decreases with the introduction of La2O3. The activation energy of conductivity is not largely varied with the La2O3 content, suggesting that the conduction mechanism is essentially preserved despite LaPO4 dispersion. In comparison with the previously reported LATP-LLTO system, although some unidentified impurity slightly reduces the conductivity maximum, the fine dispersion of LaPO4 particles can be achieved in the LATP–La2O3 system.

scholarly journals MOVPE Growth of Quaternary (Al,Ga,In)N for UV Optoelectronics

2000 ◽  
Vol 5 (S1) ◽  
pp. 412-424
Author(s):  
Jung Han ◽  
Jeffrey J. Figiel ◽  
Gary A. Petersen ◽  
Samuel M. Myers ◽  
Mary H. Crawford ◽  
...  
Keyword(s):  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Optoelectronic Devices ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Energy ◽  
Movpe Growth ◽  
Pl Emission

We report the growth and characterization of quaternary AlGaInN. A combination of photoluminescence (PL), high-resolution x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS) characterizations enables us to explore the contours of constant- PL peak energy and lattice parameter as functions of the quaternary compositions. The observation of room temperature PL emission at 351nm (with 20% Al and 5% In) renders initial evidence that the quaternary could be used to provide confinement for GaInN (and possibly GaN). AlGaInN/GaInN MQW heterostructures have been grown; both XRD and PL measurements suggest the possibility of incorporating this quaternary into optoelectronic devices.

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