Effect of reactive ion etching-induced defects on the surface band bending of heavily Mg-doped p-type GaN

2005 ◽  
Vol 97 (10) ◽  
pp. 104904 ◽  
Author(s):  
Yow-Jon Lin ◽  
Yow-Lin Chu
Keyword(s):  
Reactive Ion Etching ◽  
Surface Band ◽  
Ion Etching ◽  
Band Bending ◽  
P Type ◽  
Induced Defects ◽  
Mg Doped

Characterization of Hg0.7Cd0.3Te n- on p-type structures obtained by reactive ion etching induced p- to n conversion

2000 ◽  
Vol 29 (6) ◽  
pp. 837-840 ◽  
Author(s):  
J. Antoszewski ◽  
C. A. Musca ◽  
J. M. Dell ◽  
L. Faraone
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching ◽  
P Type

Reactive-Ion-Etching Induced Deep Levels Observed in n-Type and p-Type 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 759-762
Author(s):  
Koutarou Kawahara ◽  
Giovanni Alfieri ◽  
Michael Krieger ◽  
Tsunenobu Kimoto
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Deep Levels ◽  
Total Density ◽  
Ion Etching ◽  
Initial Concentration ◽  
Grown Sample ◽  
Transient Spectroscopy ◽  
P Type

In this study, deep levels are investigated, which are introduced by reactive ion etching (RIE) of n-type/p-type 4H-SiC. The capacitance of as-etched p-type SiC is remarkably small due to compensation or deactivation of acceptors. These acceptors can be recovered to the initial concentration of the as-grown sample after annealing at 1000oC. However, various kinds of defects remain at a total density of ~5× 1014 cm-3 in a surface-near region from 0.3 μm to 1.0 μm even after annealing at 1000oC. The following defects are detected by Deep Level Transient Spectroscopy (DLTS): IN2 (EC – 0.35 eV), EN (EC – 1.6 eV), IP1 (EV + 0.35 eV), IP2 (HS1: EV + 0.39 eV), IP4 (HK0: EV + 0.72 eV), IP5 (EV + 0.75 eV), IP7 (EV + 1.3 eV), and EP (EV + 1.4 eV). These defects generated by RIE can be significantly reduced by thermal oxidation and subsequent annealing at 1400oC.

Reactive Ion Etching Damage to Shallow Junctions

1986 ◽  
Vol 68 ◽  
Author(s):  
I. W. Wu ◽  
R. H. Bruce ◽  
J. C. Mikkelsen ◽  
R. A. Street ◽  
T. Y. Huang ◽  
...  
Keyword(s):  
Structural Damage ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Chemical Contamination ◽  
Ion Etching ◽  
Annealing Behavior ◽  
Shallow Junctions ◽  
Etched Surface ◽  
20 Nm ◽  
Induced Defects

AbstractThe damage of reactive ion etching to shallow junctions is an important consideration in advanced technology.In this paper, the damage incurred during contact etch is studied, with emphasis on those defects responsible for junction leakage of shallow junctions.Shallow p+/n and n+/p junctions have been prepared with depths of 160 nm.Junction leakage measurements have been made for various amounts of silicon loss up to within 20 nm of the junctions by using a CHF3 + CO2 plasma.The degree of chemical and structural damage has been characterized by using photoluminescence, SIMS, and spreading carrier profiling.The leakage current density was found to depend strongly on contact area and increase rapidly with junction etch depth after the etched surface has extended to within 80 nm of the junction boundary.The concentration and depth of damage increases with increasing plasma exposure until saturation.Etching induced defects are observed in photoluminescence, and one such defect is identified as a carbon interstitialcy.Enhanced diffusion effects were observed for both chemical contamination from the etch gas and the junction dopants.The spatial distribution of the chemical and structural damage has been found to correlate with the junction leakages.The annealing behavior of damage has also been investigated.

Mercury annealing of reactive ion etching induced p- to n-type conversion in extrinsically doped p-type HgCdTe

1998 ◽  
Vol 83 (10) ◽  
pp. 5555-5557 ◽  
Author(s):  
E. P. G. Smith ◽  
J. F. Siliquini ◽  
C. A. Musca ◽  
J. Antoszewski ◽  
J. M. Dell ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Type Conversion ◽  
Ion Etching ◽  
P Type

scholarly journals H-Terminated Diamond Surface Band Bending Characterization by Angle-Resolved XPS

Surfaces ◽  
2020 ◽  
Vol 3 (1) ◽  
pp. 61-71 ◽  
Author(s):  
Gonzalo Alba ◽  
David Eon ◽  
M. Pilar Villar ◽  
Rodrigo Alcántara ◽  
Gauthier Chicot ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Chemical Vapour ◽  
Diamond Surface ◽  
Diamond Growth ◽  
Surface Band ◽  
Band Bending ◽  
New Approach ◽  
Shallow Acceptors ◽  
New Interpretation ◽  
P Type

Concerning diamond-based electronic devices, the H-terminated diamond surface is one of the most used terminations as it can be obtained directly by using H2 plasma, which also is a key step for diamond growth by chemical vapour deposition (CVD). The resultant surfaces present a p-type surface conductive layer with interest in power electronic applications. However, the mechanism for this behavior is still under discussion. Upward band bending due to surface transfer doping is the most accepted model, but has not been experimentally probed as of yet. Recently, a downward band bending very near the surface due to shallow acceptors has been proposed to coexist with surface transfer doping, explaining most of the observed phenomena. In this work, a new approach to the measurement of band bending by angle-resolved X-ray photoelectron spectroscopy (ARXPS) is proposed. Based on this new interpretation, a downward band bending of 0.67 eV extended over 0.5 nm was evidenced on a (100) H-terminated diamond surface.

Effects of surface treatment using aqua regia solution on the change of surface band bending of p-type GaN

2001 ◽  
Vol 30 (3) ◽  
pp. 129-133 ◽  
Author(s):  
Jong Kyu Kim ◽  
Ki-Jeong Kim ◽  
Bongsoo Kim ◽  
Jae Nam Kim ◽  
Joon Seop Kwak ◽  
...  
Keyword(s):  
Surface Treatment ◽  
Surface Band ◽  
Band Bending ◽  
Aqua Regia ◽  
P Type

Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy

2006 ◽  
Vol 203 (1) ◽  
pp. 59-65 ◽  
Author(s):  
V. Cimalla ◽  
M. Niebelschütz ◽  
G. Ecke ◽  
V. Lebedev ◽  
O. Ambacher ◽  
...  
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Band ◽  
Band Bending ◽  
Mg Doped
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