Methodology for feedback variable selection for control of semiconductor manufacturing processes-part 2: application to reactive ion etching

2003 ◽  
Vol 16 (4) ◽  
pp. 588-597 ◽  
Author(s):  
O.D. Patterson ◽  
Xiaobin Dong ◽  
P.P. Khargonekar ◽  
V.N. Nair ◽  
D.S. Grimard
Keyword(s):  
Variable Selection ◽  
Semiconductor Manufacturing ◽  
Reactive Ion Etching ◽  
Manufacturing Processes ◽  
Ion Etching ◽  
Selection For

Plasma Processing in Semiconductor Manufacturing

1986 ◽  
Vol 68 ◽  
Author(s):  
Clarence J. Tracy
Keyword(s):  
Manufacturing Process ◽  
Semiconductor Manufacturing ◽  
Plasma Deposition ◽  
Reactive Ion Etching ◽  
Plasma Processing ◽  
Development Work ◽  
Ion Etching ◽  
Product Flow ◽  
Subsequent Processing

AbstractThe implementation of plasma deposition and reactive ion etching into a semiconductor VLSI manufacturing process is rarely trivial.In some cases isolated process modules may appear to function well until integrated into a lengthy product flow, where interactions occur with prior or subsequent processing steps.In addition, dry processes have some unique and sometimes undesirable characteristics which need to be considered.Examples of both of these kinds of problems will be shown.Opportunities still exist for research to lead to a better understanding of mechanisms and for development work to improve the equipment and specific processes.

Applications of Control to Semiconductor Manufacturing: Reactive Ion Etching

1993 ◽  
Author(s):  
M. Elta ◽  
H. Etemad ◽  
J. S. Freudenberg ◽  
M. D. Giles ◽  
J. W. Grizzle ◽  
...  
Keyword(s):  
Semiconductor Manufacturing ◽  
Reactive Ion Etching ◽  
Ion Etching

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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