Initial Stages of Epitaxial Growth of GaAs on (100) Silicon

1986 ◽  
Vol 67 ◽  
Author(s):  
D. K. Biegelsen ◽  
F. A. Ponce ◽  
A. J. Smith ◽  
J. C. Tramontana
Keyword(s):  
Surface Morphology ◽  
Three Dimensional ◽  
Island Growth ◽  
Island Size ◽  
Sem Images ◽  
Cross Sectional ◽  
Plan View ◽  
Stages Of Growth ◽  
Direct Observations ◽  
Diffusion Controlled

ABSTRACTDirect observations of early stages of growth of GaAs on (100)Si are presented. Cross sectional TEM and plan view SEM images show three dimensional island growth, for growth above 300°C. Island size, island spacing, surface morphology and stacking fault defect spacing all decrease with substrate temperaturefor fixed Ga and As2 fluxes. Below 300C, 7nm thick films are uniform. Diffusion-controlled growth kinetics are inferred.

TEM and SEM Studies of MOCVD-Grown GaP on Si

1985 ◽  
Vol 62 ◽  
Author(s):  
M. M. Ai-Jassim ◽  
J. M. Olson ◽  
K. M. Jones
Keyword(s):  
Defect Density ◽  
Growth Parameters ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Antiphase Domains

ABSTRACTGaP and GaP/GaAsP epitaxial layers have been grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). These layers were characterized by SEM and TEM plan-view and cross-sectional examination. At growth temperatures ranging from 600° C to 800° C, the initial stages of growth were dominated by three-dimensional nucleation. TEM studies showed that at high temperatures the nuclei were generally misoriented with respect to each other yielding, upon coalescence, polycrystalline layers. The growth of single-crystal layers was achieved by nucleating a 30–50 nm layer of GaP at 500° C, followed by annealing and continued growth at 750 ° C. The defect density in these structures was investigated as a function of various growth parameters and substrate conditions. A high density of structural defects was generated at the Si/GaP interface. The use of 2° off (100) Si substrates resulted in GaP layers free of antiphase domains. These results and their implications are discussed.

FIB Micro-Pillar Sampling of Si Devices and its 3D Observation

2003 ◽  
Author(s):  
T. Yaguchi ◽  
T. Kamino ◽  
T. Ohnishi ◽  
T. Hashimoto ◽  
K. Umemura ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Dark Field ◽  
Limiting Factor ◽  
Sem Images ◽  
Cross Sectional ◽  
Scanning Transmission

Abstract A novel technique for three-dimensional structural and elemental analyses using a dedicated focused ion beam (FIB) and scanning transmission electron microscope (STEM) has been developed. The system employs an FIB-STEM compatible sample holder with sample stage rotation mechanism. A piece of sample (micro sample) is extracted from the area to be characterized by the micro-sampling technique [1-3]. The micro sample is then transferred onto the tip of the stage (needle stage) and bonded by FIB assisted metal deposition. STEM observation of the micro sample is carried out after trimming the sample into a micro-pillar 2-5 micron squared in cross-section and 10 -15 micron in length (micro-pillar sample). High angle annular dark field (HAADF) STEM, bright field STEM and secondary electron microscopy (SEM) images are obtained at 200kV resulting in threedimensional and cross sectional representations of the microsample. The geometry of the sample and the needle stage allows observation of the sample from all directions. The specific site can be located for further FIB milling whenever it is required. Since the operator can choose materials for the needle stage, the geometry of the original specimen is not a limiting factor for quantitative energy dispersive X-ray (EDX) analysis.

scholarly journals Pressure and Temperature Effects on Stoichiometry and Microstructure of Nitrogen-Rich TiN Thin Films Synthesized via Reactive Magnetron DC-Sputtering

2008 ◽  
Vol 2008 ◽  
pp. 1-9 ◽  
Author(s):  
E. Penilla ◽  
J. Wang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Xrd Analysis ◽  
Preferred Orientation ◽  
Reactive Magnetron ◽  
Sem Images ◽  
Cross Sectional ◽  
X Ray ◽  
Dc Sputtering ◽  
Tin Thin Films

Nitrogen-rich titanium nitride (TiN) thin films containing excess nitrogen up to 87.0 at.% were produced on (100) Si substrates via the reactive magnetron DC-sputtering of a commercially available 99.995 at.% pure Ti target within an argon-nitrogen (Ar-N2) atmosphere with a 20-to-1 gas ratio. The process pressure (PP) and substrate temperature (TS) at which deposition occurred were varied systematically between 0.26 Pa–1.60 Pa and between15.0∘C–600∘C, respectively, and their effects on the chemical composition, surface morphology, and preferred orientation were characterized by energy dispersive X-ray spectroscopy (EDS), field emission scanning electron microscopy (FE-SEM), and X-ray diffraction (XRD). The EDS analysis confirms increasing nitrogen content with increasingPPandTS. The SEM images reveal a uniform and crystallized surface morphology as well as a closely packed cross-sectional morphology for all crystalline films and a loosely packed cross-sectional morphology for amorphous films. Films produced at lowerPPandTShave a pyramidal surface morphology which transitions to a columnar and stratified structure asPPandTSincrease. The XRD analysis confirms the existence of only theδ-TiN phase and the absence of other nitrides, oxides, and/or sillicides in all cases. It also indicates that at lowerPPandTS, the preferred orientation relative to the substrate is along the (111) planes, and that it transitions to a random orientation along the (200), (220), and (311) planes asPPandTSincrease and these results correlate with and qualify those observed by SEM.

AFM Study of Nucleation and Void Formation in SiC Carbonization of Si

1992 ◽  
Vol 280 ◽  
Author(s):  
J. P. Li ◽  
A. J. Steckl
Keyword(s):  
Reaction Time ◽  
Film Growth ◽  
Three Dimensional ◽  
Void Formation ◽  
Precursor Concentration ◽  
Nucleation Density ◽  
Island Growth ◽  
Cross Sectional ◽  
Nucleation Mechanisms ◽  
To Come

ABSTRACTIn this paper the nucleation mechanisms for SiC thin film growth are studied by rapid thermal CVD and atomic force microscopy (AFM). The nucleation mode was found to be strongly dependent on the hydrocarbon partial pressure in the gas stream, for a fixed reaction time. In the case of three-dimensional (island) growth at low precursor concentration, cross-sectional SEM micrographs indicate that no voids are present at the center of each nucleus (or island). Voids begin to form when two neighboring nuclei come in contact. AFM has shown that trenches are present in the Si substrate around each isolated nucleus. The trench depth increases with the diameter of the island. AFM analysis of films grown for a nominal reaction time of 1 sec at different propane concentrations indicates that: (1) SiC grain size and surface roughness decreases with increasing propane concentration; (2) SiC grain density increases with increasing propane concentration. Based on the above evidence, the following nucleation mechanism is proposed: (a) the initial nucleation density is determined by the precursor concentration in the reaction gas; b) each nucleus grows larger, both laterally and vertically, by consuming Si around it; (c) voids are formed when nuclei grow large enough to come in contact, and not at the original nucleation sites.

Microstructure Characterization of Si/Ni Contact Layers on n-Type 4H-SiC by TEM and XEDS

2014 ◽  
Vol 778-780 ◽  
pp. 697-701 ◽  
Author(s):  
Marek Wzorek ◽  
Andrzej Czerwiński ◽  
Jacek Ratajczak ◽  
Michał A. Borysiewicz ◽  
Andrian V. Kuchuk ◽  
...  
Keyword(s):  
Chemical Composition ◽  
Surface Morphology ◽  
Ohmic Contacts ◽  
Microstructure Characterization ◽  
Cross Sectional ◽  
Plan View

Distribution of chemical composition in nickel-based ohmic contacts ton-type 4H-SiC was investigated with XEDS mapping performed on plan-view and cross-sectional TEM samples. Obtained results indicate that local deviations in stoichiometry from that of Ni2Si phase significantly contribute to degradation of surface morphology.

Three Dimensional Characterization of a Specific Site by an FIB Micro-Sampling Technique

2001 ◽  
Vol 7 (S2) ◽  
pp. 938-939
Author(s):  
T. Yaguchi ◽  
Y. Kuroda ◽  
Y. Ueki ◽  
T. Kamino ◽  
T. Ohnishi ◽  
...  
Keyword(s):  
Field Emission ◽  
Three Dimensional ◽  
Sampling Technique ◽  
Metal Deposition ◽  
Specific Site ◽  
Cross Sectional ◽  
Plan View ◽  
Sem Imaging ◽  
Sample Carrier

We have developed an FIB micro-sampling technique to prepare both plan view and cross-sectional TEM specimens from a specific site.The instruments that were used in this study are the Hitachi FB-2000A FIB system equipped a with micromanipulator unit and an HF-2200 cold field emission 200kV analytical TEM equipped with a scanning attachment allowing both STEM and SEM imaging.Figure 1 shows a procedure to prepare a micro-sample for either plan view or cross-sectional TEM observation of the specific site. First, the micro-sample for plan view TEM observation is trench milled by using an FIB(Figure 1a). Second, a tip of a micromanipulator W-probe is bonded to the micro-sample with the FIB assisted metal deposition. Then, the micro-sample is lifted out and transferred onto a micro-sample carrier(Figure 1b).

Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates

1990 ◽  
Vol 198 ◽  
Author(s):  
Henry P. Lee ◽  
Thomas George ◽  
Hyunchul Sohn ◽  
Jay Tu ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Gaas Films ◽  
Si Films ◽  
Initial Buffer

ABSTRACTThe nucleation and interfacial defect structure of thin GaAs films grown on reactive ion etched Si substrates by normal molecular beam epitaxy (MBE) and modulated molecular beam epitaxy (MMBE) at 300°C were studied by plan view and high resolution cross-sectional electron microscopy (TEM). Plan view TEM micrographs show a pronounced three-dimensional (3-d) island type nucleation for the MBE grown sample. A high density of microtwins is also found in these nucleated islands from high resolution cross-sectional TEM micrographs. The 3-d nucleation and the interfacial twinning is suppressed however in the MMBE grown samples. The FWHM of the (400) Bragg peak for 3 μm thick GaAs on Si films shows a reduction of 60 arcseconds when the initial buffer layer is grown by MMBE as compared to normal MBE.

The reaction of amorphous Ni-Nb films with Si in the presence of a native SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 664-665
Author(s):  
N. Rozhanski ◽  
A. Barg
Keyword(s):  
High Temperature ◽  
Crystallization Temperature ◽  
Diffusion Barriers ◽  
Sio2 Layer ◽  
Si Substrate ◽  
Cross Sectional ◽  
Plan View ◽  
Temperature Range ◽  
Sputter Deposited

Amorphous Ni-Nb alloys are of potential interest as diffusion barriers for high temperature metallization for VLSI. In the present work amorphous Ni-Nb films were sputter deposited on Si(100) and their interaction with a substrate was studied in the temperature range (200-700)°C. The crystallization of films was observed on the plan-view specimens heated in-situ in Philips-400ST microscope. Cross-sectional objects were prepared to study the structure of interfaces.The crystallization temperature of Ni5 0 Ni5 0 and Ni8 0 Nb2 0 films was found to be equal to 675°C and 525°C correspondingly. The crystallization of Ni5 0 Ni5 0 films is followed by the formation of Ni6Nb7 and Ni3Nb nucleus. Ni8 0Nb2 0 films crystallise with the formation of Ni and Ni3Nb crystals. No interaction of both films with Si substrate was observed on plan-view specimens up to 700°C, that is due to the barrier action of the native SiO2 layer.

Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy

2006 ◽  
Author(s):  
J.S. McMurray ◽  
C.M. Molella
Keyword(s):  
The Body ◽  
Silicon On Insulator ◽  
Back Side ◽  
Cross Sectional ◽  
Plan View ◽  
Spreading Resistance ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Cross Sectional Imaging ◽  
Active Channel

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.

A New Method of Wafer Level Plan View TEM Sample Preparation by DualBeam

2008 ◽  
Author(s):  
Hyoung H. Kang ◽  
Michael A. Gribelyuk ◽  
Oliver D. Patterson ◽  
Steven B. Herschbein ◽  
Corey Senowitz
Keyword(s):  
Sample Preparation ◽  
Ex Situ ◽  
Wafer Level ◽  
Cross Sectional ◽  
Plan View ◽  
Manufacturing Line ◽  
Transmission Electron ◽  
Thin Lamella ◽  
Preparation Techniques

Abstract Cross-sectional style transmission electron microscopy (TEM) sample preparation techniques by DualBeam (SEM/FIB) systems are widely used in both laboratory and manufacturing lines with either in-situ or ex-situ lift out methods. By contrast, however, the plan view TEM sample has only been prepared in the laboratory environment, and only after breaking the wafer. This paper introduces a novel methodology for in-line, plan view TEM sample preparation at the 300mm wafer level that does not require breaking the wafer. It also presents the benefit of the technique on electrically short defects. The methodology of thin lamella TEM sample preparation for plan view work in two different tool configurations is also presented. The detailed procedure of thin lamella sample preparation is also described. In-line, full wafer plan view (S)TEM provides a quick turn around solution for defect analysis in the manufacturing line.

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