Nucleation and Defect Structures of GaAs Films Grown on Reactive Ion Etched Si Substrates

1990 ◽  
Vol 198 ◽  
Author(s):  
Henry P. Lee ◽  
Thomas George ◽  
Hyunchul Sohn ◽  
Jay Tu ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Three Dimensional ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Gaas Films ◽  
Si Films ◽  
Initial Buffer

ABSTRACTThe nucleation and interfacial defect structure of thin GaAs films grown on reactive ion etched Si substrates by normal molecular beam epitaxy (MBE) and modulated molecular beam epitaxy (MMBE) at 300°C were studied by plan view and high resolution cross-sectional electron microscopy (TEM). Plan view TEM micrographs show a pronounced three-dimensional (3-d) island type nucleation for the MBE grown sample. A high density of microtwins is also found in these nucleated islands from high resolution cross-sectional TEM micrographs. The 3-d nucleation and the interfacial twinning is suppressed however in the MMBE grown samples. The FWHM of the (400) Bragg peak for 3 μm thick GaAs on Si films shows a reduction of 60 arcseconds when the initial buffer layer is grown by MMBE as compared to normal MBE.

Initial Nucleation Studies of Heteroepitaxial GaAs films on Si Substrates by Modulated Molecular Beam Epitaxy

1989 ◽  
Vol 145 ◽  
Author(s):  
Henry P. Lee ◽  
Xiaoming Lius ◽  
Shyh Wang ◽  
Thomas George ◽  
Eicke R. Weber ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Structural Quality ◽  
Two Dimensional ◽  
Double Crystal ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Gaas Films ◽  
Beam Technique

AbstractNominal 100 Å and 150 Å thick GaAs layers were deposited on Si substrates by a modulated molecular beam technique and normal molecular beam epitaxy (MBE) at 300 °C and 375 °C respectively for plan view and cross-sectional transmission electron microscopy (TEM) examinations. From coverage of Moire fringes, it is found that the nucleated GaAs films grown by the modulated molecular beam technique were thinner, streaker and more two-dimensional than the MBE grown films. The same modulated molecular beam technique was also used for the deposition of the initial buffer layer of 3µm thick GaAs on Si films. Results from the 77k photoluminescence(PL) and double crystal X ray diffraction measurements showed that these films have superior optical and structural quality compared to similar films grown by normal two-step MBE. The improvement is attributed to a more two-dimensional nucleation of GaAs films associated with the modulated molecular beam growth technique.

Implantation Energy Selection in Molecular Beam Epitaxy GaAs Films on Si Substrates

1991 ◽  
Vol 8 (3) ◽  
pp. 149-152
Author(s):  
Xiao Guangming ◽  
Yin Shiduan ◽  
Zhang Jingping ◽  
Ding Aiju ◽  
Dong Aihua ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Implantation Energy ◽  
Si Substrates ◽  
Gaas Films

TEM and SEM Studies of MOCVD-Grown GaP on Si

1985 ◽  
Vol 62 ◽  
Author(s):  
M. M. Ai-Jassim ◽  
J. M. Olson ◽  
K. M. Jones
Keyword(s):  
Defect Density ◽  
Growth Parameters ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Structural Defects ◽  
Organic Chemical ◽  
Cross Sectional ◽  
Plan View ◽  
Si Substrates ◽  
Antiphase Domains

ABSTRACTGaP and GaP/GaAsP epitaxial layers have been grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). These layers were characterized by SEM and TEM plan-view and cross-sectional examination. At growth temperatures ranging from 600° C to 800° C, the initial stages of growth were dominated by three-dimensional nucleation. TEM studies showed that at high temperatures the nuclei were generally misoriented with respect to each other yielding, upon coalescence, polycrystalline layers. The growth of single-crystal layers was achieved by nucleating a 30–50 nm layer of GaP at 500° C, followed by annealing and continued growth at 750 ° C. The defect density in these structures was investigated as a function of various growth parameters and substrate conditions. A high density of structural defects was generated at the Si/GaP interface. The use of 2° off (100) Si substrates resulted in GaP layers free of antiphase domains. These results and their implications are discussed.

Low Temperature Epitaxy of Si on Dihydride-Terminated Si (001): Energetic Versus Thermal Growth

1996 ◽  
Vol 441 ◽  
Author(s):  
M. E. Taylor ◽  
Harry A. Atwater ◽  
M. V. Ramana Murty
Keyword(s):  
Molecular Beam Epitaxy ◽  
Pulsed Laser Deposition ◽  
Molecular Beam ◽  
Pulsed Laser ◽  
High Energy ◽  
Interface Roughness ◽  
Laser Deposition ◽  
Cross Sectional ◽  
Comparison Of The Results ◽  
Si Films

AbstractPulsed laser deposition of Si on dihydride-terminated (l×1) Si (001) at low temperatures yields epitaxial layers, unlike molecular beam epitaxy. Si films were grown by ultrahigh vacuum pulsed laser deposition on the dihydride surface at substrate temperatures from 40 °C to 350 ° C. Epitaxial thickness and interface roughness were measured by high-resolution cross-sectional transmission electron microscopy and found to be comparable to known data for Si films grown by molecular beam epitaxy on monohydride-terminated (2×l) Si (001). Si films were grown at 200 °C by pulsed laser deposition on the dihydride surface at argon background pressures between 10− torr and 10−1 torr. Ion probe time of flight data was collected over the same pressure range. Comparison of the results suggests that loss of epitaxy is correlated with low incident energy. This, in conjunction with information on surface reconstruction obtained from reflection high-energy electron diffraction, suggests that the mechanism enabling epitaxy on the dihydride surface is Si subplantation, a mechanism only possible in growth with an energetic beam.

A HREM study of V/Al2O3 interface

1992 ◽  
Vol 50 (1) ◽  
pp. 146-147
Author(s):  
Y. Ikuhara ◽  
P. Pirouz ◽  
A. H. Heuer ◽  
S. Yadavalli ◽  
C. P. Flynn
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
High Resolution ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Resolution Electron Microscopy ◽  
Interface Structure ◽  
Cross Sectional ◽  
Plan View ◽  
Resolution Electron

The interface structure between vanadium and the R-plane of sapphire (α-Al2O3) was studied by conventional and cross-sectional high resolution electron microscopy (HREM) to clarify the atomic structure of the interface.A 57 nm thick vanadium film was deposited on the (1102) (R) plane of sapphire by molecular beam epitaxy (MBE) at a substrate temperature of 920 K in a vacuum of 10-10torr. The HREM observations of the interface were done from three directions: two cross-sectional views (parallel to [0221]Al2O3 and [1120]Al2O3) and a plan view (parallel to [2201]Al2O3) by a top-entry JEOL 4000EX electron microscope (400 kV).

High-Quality GaAs Films on Si Substrates Grown by Atomic Hydrogen-Assisted Molecular Beam Epitaxy for Solar Cell Applications

1993 ◽  
Vol 32 (Part 2, No. 10B) ◽  
pp. L1556-L1558 ◽  
Author(s):  
Yoshitaka Okada ◽  
Shigeru Ohta ◽  
Hirofumi Shimomura ◽  
Akio Kawabata ◽  
Mitsuo Kawabe
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Atomic Hydrogen ◽  
Molecular Beam ◽  
High Quality ◽  
Si Substrates ◽  
Gaas Films

Growth and characterization of GaAs on Si substrates grown by molecular-beam epitaxy

1987 ◽  
Vol 65 (8) ◽  
pp. 897-903
Author(s):  
P. Mandeville ◽  
A. J. SpringThorpe ◽  
C. J. Miner ◽  
R. A. Bruce ◽  
J. F. Currie ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Defect Density ◽  
Growth Parameters ◽  
Current Gain ◽  
Hall Resistance ◽  
Cross Sectional ◽  
Si Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas

Single-crystal GaAs layers have been grown by molecular beam epitaxy (MBE) on (100) Si substrates. Surface morphology, defect density, and optical and electrical properties have been studied as a function of the growth parameters. The characterization techniques included photoluminescence, Hall effect, cross-sectional transmission electron microscopy, and X-ray diffraction. GaAs metal semiconductor field-effect transitors on Si exhibited transconductances of 128 mS∙mm−1 and current-gain cutoff frequencies as high as 19 GHz. Special heterostructures showed Shubnikov–de Haas oscillations at low temperature and plateaux in the Hall resistance, which confirmed the presence of two-dimensional electron gas in the heterostructure.

Study on Barium Strontium Titanate Thin Films Integrated on Si Substrates by Laser Molecular Beam Epitaxy

2009 ◽  
Vol 79-82 ◽  
pp. 823-826
Author(s):  
X.Y. Zhou ◽  
Yun Zhou ◽  
G.Y. Wang ◽  
Y. Wang ◽  
Helen Lai Wah Chan ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Lattice Structure ◽  
Bias Field ◽  
Sio2 Layer ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Laser Molecular Beam Epitaxy ◽  
Si Substrates ◽  
Transmission Electron

(Ba,Sr)TiO3 thin film has been deposited on Si (001) wafer with the SiO2 layer as the block layer through laser molecular-beam epitaxy using an ultra thin Sr layer as template. X-ray diffraction measurements and the cross-sectional observations under transmission electron microscope indicated that BST was well crystallized. This deposition of Sr layer is considered to remove the thin SiO2 layer to produce a layer, which is crystallized and has a lattice structure matching with that of perovskite BST. The maximum in-plane dielectric tunability is calculated to be 50% at 1 GHz under a moderate DC bias field of 13.3 V/µm. This BST/Si structure is believed to be a promising candidate in the development of ferroelectric BST-based microwave devices.

High-resolution and diffraction contrast imaging of linear islands formed during molecular beam epitaxy

1995 ◽  
Vol 53 ◽  
pp. 106-107
Author(s):  
D. Loretto ◽  
F. M. Ross ◽  
C. A. Lucas
Keyword(s):  
High Resolution ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Effusion Cell ◽  
Contrast Imaging ◽  
Experimental Conditions ◽  
Plan View ◽  
Diffraction Contrast ◽  
Scientific Curiosity ◽  
High Resolution Images

There is currently a great deal of interest in the growth and properties of 'one-dimensional' structures. This is motivated by scientific curiosity and by the practical urge to fabricate faster, smaller and more efficient electronic and optical devices. It has recently been reported that under certain conditions linear islands can form spontaneously during growth. In this work we investigate linear CaF2 islands which form on Si during molecular beam epitaxy. By combining low resolution diffraction contrast images from plan-view specimens with high resolution images from cross-section specimens we determine that these islands are extremely uniform in width, can be as narrow as 5 nm, and extend over many 10s of μm. We postulate a mechanism for the formation of these novel features based on surface energy minimization.The experimental conditions have been reported in detail elsewhere. Briefly, CaF2 is deposited from an effusion cell onto a Si substrate at 700°C in a vacuum of 1010 Torr.

The Heteronucleation of and Defect Generation in MBE-Grown InAs Layers

1988 ◽  
Vol 144 ◽  
Author(s):  
M. M. AI-Jassim ◽  
J. P. Goral ◽  
P. Sheldon ◽  
K. M. Jones
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Misfit Dislocations ◽  
High Energy Electron ◽  
Cross Sectional ◽  
Plan View ◽  
Gaas Substrates

ABSTRACTEpitaxial InAs layers were grown by molecular beam epitaxy (MBE) on GaAs substrates. The initial stages of nucleation were studied by in situ reflection high energy electron diffraction (RHEED). Cross-sectional TEM examination was used to investigate the morphology of the growing layer, while plan-view examination revealed the generation of misfit dislocations. The growth mode was found to depend mainly on the conditions used to nucleate the epitaxial layer. In most cases, Stranski-Krastanov type of growth was observed.

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