Microwave performance of GaAs-on-Si MESFETs with Si buffer layers

1993 ◽  
Vol 40 (3) ◽  
pp. 507-512 ◽  
Author(s):  
A. Georgakilas ◽  
G. Halkias ◽  
A. Christou ◽  
C. Papavassiliou ◽  
G. Perantinos ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Gaas On Si

Heteroepitaxial growth of GaAs on Si by MOVPE using a-GaAs/a-Si double-buffer layers

2006 ◽  
Vol 295 (2) ◽  
pp. 103-107 ◽  
Author(s):  
Wu-Yih Uen ◽  
Zhen-Yu Li ◽  
Yen-Chin Huang ◽  
Meng-Chu Chen ◽  
Tsun-Neng Yang ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Heteroepitaxial Growth ◽  
Gaas On Si

Large scale MOCVD growth of GaAs-on-Si by atomic layer epitaxy using initial buffer layers

1990 ◽  
Vol 106 (2-3) ◽  
pp. 421-425 ◽  
Author(s):  
Norio Hayafuji ◽  
Motoharu Miyashita ◽  
Hisao Kumabe ◽  
Toshio Murotani
Keyword(s):  
Large Scale ◽  
Atomic Layer ◽  
Buffer Layers ◽  
Atomic Layer Epitaxy ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Initial Buffer

Comparative study of amorphous and crystalline buffer layers in MBE growth of GaAs on Si

1991 ◽  
Vol 115 (1-4) ◽  
pp. 122-127 ◽  
Author(s):  
W.Y. Uen ◽  
S. Sakawa ◽  
T. Nishinaga
Keyword(s):  
Comparative Study ◽  
Buffer Layers ◽  
Mbe Growth ◽  
Gaas On Si

Improved MOCVD Growth of GaAs on Si

1987 ◽  
Vol 91 ◽  
Author(s):  
R.M. Lum ◽  
J.K. Klingert ◽  
B.A. Davidson ◽  
M.G. Lamont
Keyword(s):  
Buffer Layer ◽  
Rutherford Backscattering Spectrometry ◽  
Growth Parameters ◽  
Buffer Layers ◽  
Double Crystal ◽  
Gaas On Si ◽  
Mocvd Growth ◽  
Gaas Films ◽  
Gaas Buffer Layer ◽  
Direct Growth

ABSTRACTIn the direct growth of GaAs on Si by MOCVD the overall quality of the heteroepitaxial film is controlled to a large extent by the growth parameters of the initial GaAs buffer layer. We have investigated the structural properties of this layer using Rutherford Backscattering Spectrometry (RBS) and X-ray double crystal diffractometry. The crystallinity of the buffer layer was observed to improve with increasing layer thickness in the range 10–100nm, and then to rapidly degrade for thicker layers. High temperature (750°C) annealing of the buffer layers resulted in considerable reordering of all but the thicker (>200 nm) layers. Alteration of the usual GaAs/Si growth sequence to include an in-situ anneal of the buffer layer after growth interruption yielded GaAs films with improved structural, optical and electrical properties.

Effects of Silicon Misorientation Angle on the Rf and Dc Characteristics of GaAs-on-Si Mesfets

1995 ◽  
Vol 379 ◽  
Author(s):  
Christos Papavassiliou ◽  
G. Constantinidis ◽  
N. Kornilios ◽  
A. Georgakilas ◽  
E. LÖchterman ◽  
...  
Keyword(s):  
Misorientation Angle ◽  
Defect Density ◽  
Initial Study ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Heteroepitaxial Growth ◽  
Mbe Growth ◽  
Gaas Mesfet ◽  
Gaas On Si ◽  
Dc Characteristics

ABSTRACTA systematic experimental investigation has been undertaken for the optimization of the wafer parameters and processing for silicon wafers intended for use as substrates for MBE growth, with emphasis on heteroepitaxial growth of GaAs-on- Si. Within this investigation, results are presented of an initial study focused on the optimization of the magnitude of the misorientation angle towards a <110> direction for the growth of GaAs on (001) Si wafers. This angle controls the structure of the stepped (001)Si surface and can influence the defect density and surface smoothness of the GaAs-on-Si layers. Silicon substrates misoriented from 0 deg. up to 9 deg. were cut to specification and subsequently used for the epitaxial growth of GaAs MESFET structures. MESFETs were fabricated and their dc and RF characteristics compared. The resistivity of the GaAs-on-Si buffer layers was evaluated and correlated to the results from device characterization. This work presents the effects of the magnitude of the angle of misorientation in the range from 0 to 9 deg.

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