Barrier-Controlled Transport in Doped Microcrystalline Si

2000 ◽  
Vol 609 ◽  
Author(s):  
S. Brehme ◽  
P. Kanschat ◽  
W. Fuhs
Keyword(s):  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Band Tail ◽  
Potential Barriers ◽  
Spin Resonance ◽  
Best Fitting ◽  
Electron Spin Resonance Investigation ◽  
Si Films

ABSTRACTThin μc-Si films doped with P and B are grown on glass at temperatures between 300 °C and 400 °C by electron cyclotron resonance chemical vapor deposition (ECR-CVD). Hall mobilities in the films are found to be temperature-activated with activation energies being correlated to the doping concentrations. The in-grain mobility as determined by an electron spin resonance investigation is much higher than the Hall mobility the values of which are typically near 1 cm2/Vs at 300 K. The experimental results suggest that transport is dominated by potential barriers at the grain boundaries. An extended Seto model is used to probe the interface trap distribution. We obtained the best fitting results by assuming band-tail states decaying exponentially from the respective band edges.

Growth of Er Doped si Films by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition

1993 ◽  
Vol 301 ◽  
Author(s):  
Jim L. Rogers ◽  
Walter J. Varhue ◽  
Edward Adams
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Electron Cyclotron ◽  
Plasma Stream ◽  
Ecr Plasma ◽  
Si Films

ABSTRACTThin Si films doped with Er have been grown at low temperature by plasma enhanced chemical vapor deposition. The Er gas source is a sublimed organo-metallic compound fed into the process chamber. High doping concentrations without precipitation are possible because of the low deposition temperatures. The process relies on the beneficial effects of low energy ion bombardment to reduce the growth temperature. The ions as well as reactive chemical species are produced by an electron cyclotron resonance (ECR) plasma stream source. A hydrogen plasma stream is used to perform an in-situ pre-deposition clean to remove oxide from the Si surface. Film crystallinity and impurity concentration are determined by Rutherford backscattering spectrometry.

Deposition of Hydrogenated Si Films by Hydrogenation of the SiO2 Surface and Hydrogen Dilution with PE-CVD and ECR-CVD

1994 ◽  
Vol 345 ◽  
Author(s):  
Kun-Chih Wang ◽  
Tri-Rung Yew ◽  
Huey-Liang Hwang
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Hydrogen Dilution ◽  
Surface Steps ◽  
Transmission Electron ◽  
Temperature Deposition ◽  
Si Films

AbstractThis paper presents the results of low temperature deposition of poly-Si films deposited on SiO2 layers. Hydrogen dilution, hydrogen atom treatment, and hydrogenation of the SiO2 surface steps were applied to deposit the Si films. The above treatment steps were usually used in the plasma enhanced chemical vapor deposition and they were extended to be used in the electron cyclotron resonance chemical vapor deposition to identify the grain growth effects. The nucleation and microstructure of the silicon films were observed by cross-section transmission electron microscopy (XTEM).

Influence of Power on the Microstructure and Optical Properties of Microcrystalline Si Films

2014 ◽  
Vol 1016 ◽  
pp. 305-308
Author(s):  
Hua Cheng ◽  
Feng Jiang ◽  
Chang Zheng Ma ◽  
Kuo Jiang
Keyword(s):  
Optical Properties ◽  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Gaseous Mixture ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Microcrystalline Silicon ◽  
Si Films ◽  
Resonance Plasma

Microcrystalline silicon films were deposited using Ar diluted SiH4 gaseous mixture by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECR-PECVD). The effects of power on microstrcture and optical properties of microcrystalline silicon films were investigated. The results show that, with the increasing of the power, the crystallinity increased, but the concentration of hydrogen decreased monotonously. Furthermore, the absorption coefficient of the films increased monotonously, and the optical bandgap changed from 1.89eV to 1.75eV with the microwave power ranging from 400 W to 650W.

Growth Mechanism of Microcrystalline Silicon Deposited by ECRCVD

1996 ◽  
Vol 452 ◽  
Author(s):  
I. Beckers ◽  
E. Conrad ◽  
P. Müller ◽  
N. H. Nickel ◽  
I. Sieber ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Chemical Vapor ◽  
Growth Mechanisms ◽  
Microcrystalline Silicon ◽  
Crystalline Fraction ◽  
Hydrogen Dilution ◽  
Si Films ◽  
Scanning Electron

AbstractMicrocrystalline silicon (μc-Si) films were prepared by electron cyclotron resonance assisted chemical vapor deposition (ECRCVD) using helium, argon and hydrogen dilution. The crystalline fraction was estimated from Raman backscattering spectra and scanning electron-microscopy (SEM) was used to obtain information on roughness and homogeneity of the films. For hydrogen dilution the highest crystallinity (Xc = 85 %) occurs at a ratio of ΔH = [H2]/([H2]+[SiH4])= 0.98. At the same time the deposition rate decreases continuously with increasing H2 dilution. These results are consistent with the idea that H etching promotes the growth of μc-Si. At ΔH > 0.98 a Xc decreases due to a H mediated transition of small crystallites into amorphous tissue. The implications of these results for the growth mechanisms are discussed.

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