Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

2013 ◽  
Vol 114 (22) ◽  
pp. 223519 ◽  
Author(s):  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz
Keyword(s):  
Quantum Well ◽  
Type Ii ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers

1998 ◽  
Author(s):  
Shin Shem Pei ◽  
C.H. T. Lin ◽  
Bao Hua Yang ◽  
Han Q. Le ◽  
Rui Q. Yang ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Power ◽  
High Efficiency ◽  
Type Ii ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

2011 ◽  
Vol 33 (11) ◽  
pp. 1817-1819 ◽  
Author(s):  
G. Sęk ◽  
F. Janiak ◽  
M. Motyka ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Wells ◽  
Type Ii ◽  
Mid Infrared ◽  
Type Ii Quantum Wells ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
Loss Mechanisms

scholarly journals Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

2011 ◽  
Vol 99 (2) ◽  
pp. 021102 ◽  
Author(s):  
B. A. Ikyo ◽  
I. P. Marko ◽  
A. R. Adams ◽  
S. J. Sweeney ◽  
C. L. Canedy ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Type Ii ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers

IR Sources and Modulators Based on InAs/GaSb/AlSb-Family Quantum Wells

1996 ◽  
Vol 450 ◽  
Author(s):  
J. R. Meyer ◽  
C. L. Felix ◽  
J. I. Malin ◽  
I. Vurgaftman ◽  
C.-H. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Quantum Well Lasers ◽  
Type Ii ◽  
Optical Modulators ◽  
Ir Sources ◽  
All Optical ◽  
Interband Cascade Lasers ◽  
Cascade Lasers ◽  
High Output

ABSTRACTWe review recent applications of wavefunction engineering to the design of antimonide quantum heterostructures with favorable properties for infrared devices. Examples include electro-optical and all-optical modulators based on Г-L intervalley transfer, type-II quantum well lasers with enhanced gain per injected carrier, and type-II interband cascade lasers predicted to combine low thresholds and high output powers.

Above GaSb barrier in type II quantum well structures for mid-infrared emission detected by Fourier-transformed modulated reflectivity

2011 ◽  
Vol 19 (2) ◽  
Author(s):  
M. Motyka ◽  
F. Janiak ◽  
K. Ryczko ◽  
G. Sęk ◽  
J. Misiewicz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Gas Sensing ◽  
Infrared Emission ◽  
Infrared Range ◽  
Type Ii ◽  
Mid Infrared ◽  
Quantum Well Structures ◽  
Gasb Layer ◽  
Resonant States

AbstractModulation spectroscopy in its Fourier-transformed mode has been employed to investigate the optical properties of broken gap ‘W’-shaped GaSb/AlSb/InAs/InGaSb/InAs/AlSb/GaSb quantum well structures designed to emit in the mid infrared range of 3–4 μm for applications in laser-based gas sensing. Besides the optical transitions originating from the confined states in the type II quantum wells, a number of spectral features at the energy above the GaSb band gap have been detected. They have been analyzed in a function of InAs and GaSb layer widths and ultimately connected with resonant states in the range of AlSb tunneling barriers.

scholarly journals Interface Intermixing in Type II InAs/GaInAsSb Quantum Wells Designed for Active Regions of Mid-Infrared-Emitting Interband Cascade Lasers

2015 ◽  
Vol 10 (1) ◽  
Author(s):  
Marcin Motyka ◽  
Grzegorz Sęk ◽  
Krzysztof Ryczko ◽  
Mateusz Dyksik ◽  
Robert Weih ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Active Regions ◽  
Type Ii ◽  
Mid Infrared ◽  
Interband Cascade Lasers ◽  
Cascade Lasers
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