High Density Plasma Etching of Ta2O5-Selectivity to Si and Effect of UV Light Enhancement

1999 ◽  
Vol 606 ◽  
Author(s):  
K.P Lee ◽  
H. Cho ◽  
R. K. Singh ◽  
S. J. Pearton ◽  
C. Hobbs ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Uv Light ◽  
Inductively Coupled ◽  
Uv Illumination ◽  
Icp Etching ◽  
Light Enhancement ◽  
Order Of Magnitude ◽  
Etch Rates ◽  
Post Deposition

AbstractEtch rates up to 1200 Åmin−1 for Ta2O5 were achieved in both SF6/Ar and Cl2/Ar discharges under Inductively Coupled Plasma conditions. The etch rates with N2/Ar or CH4/H2/Ar chemistries were an order of magnitude lower. There was no effect of post deposition annealing on the Ta2O5 etch rates, at least up to 800 °C. Selectivities to Si of ∼1 were achieved at low source powers, but at higher powers the Si typically etched 4-7 times faster than Ta 20 5. UV illumination during ICP etching in both SF6/Ar and Cl2/Ar produced significant enhancements (up to a factor of 2) in etch rates due to photo-assisted desorption of the TaFx products. The UV illumination is an alternative to employing elevated sample temperatures during etching to increase the volatility of the etch products and may find application where the thermal budget should be minimized during processing.

scholarly journals Impact of Inductively Coupled Plasma Etching Conditions on the Formation of Semi-Polar ( 11 2 ¯ 2 ) and Non-Polar ( 11 2 ¯ 0 ) GaN Nanorods

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2562
Author(s):  
Pierre-Marie Coulon ◽  
Peng Feng ◽  
Tao Wang ◽  
Philip A. Shields
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Defect Density ◽  
Rf Power ◽  
Resonant Cavities ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Dc Bias ◽  
The Impact

The formation of gallium nitride (GaN) semi-polar and non-polar nanostructures is of importance for improving light extraction/absorption of optoelectronic devices, creating optical resonant cavities or reducing the defect density. However, very limited studies of nanotexturing via dry etching have been performed, in comparison to wet etching. In this paper, we investigate the formation and morphology of semi-polar (112¯2) and non-polar (112¯0) GaN nanorods using inductively coupled plasma (ICP) etching. The impact of gas chemistry, pressure, temperature, radio-frequency (RF) and ICP power and time are explored. A dominant chemical component is found to have a significant impact on the morphology, being impacted by the polarity of the planes. In contrast, increasing the physical component enables the impact of crystal orientation to be minimized to achieve a circular nanorod profile with inclined sidewalls. These conditions were obtained for a small percentage of chlorine (Cl2) within the Cl2 + argon (Ar) plasma combined with a low pressure. Damage to the crystal was reduced by lowering the direct current (DC) bias through a reduction of the RF power and an increase of the ICP power.

scholarly journals Batch Fabrication of Silicon Nanometer Tip Using Isotropic Inductively Coupled Plasma Etching

Micromachines ◽  
2020 ◽  
Vol 11 (7) ◽  
pp. 638
Author(s):  
Lihao Wang ◽  
Meijie Liu ◽  
Junyuan Zhao ◽  
Jicong Zhao ◽  
Yinfang Zhu ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Large Scale ◽  
Etch Depth ◽  
Wafer Level ◽  
Small Surface ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Batch Fabrication

This work reports a batch fabrication process for silicon nanometer tip based on isotropic inductively coupled plasma (ICP) etching technology. The silicon tips with nanometer apex and small surface roughness are produced at wafer-level with good etching homogeneity and repeatability. An ICP etching routine is developed to make silicon tips with apex radius less than 5 nm, aspect ratio greater than 5 at a tip height of 200 nm, and tip height more than 10 μm, and high fabrication yield is achieved by mask compensation and precisely controlling lateral etch depth, which is significant for large-scale manufacturing.

ICP Etching of 4H-SiC Substrates

2013 ◽  
Vol 740-742 ◽  
pp. 825-828 ◽  
Author(s):  
Jerome Biscarrat ◽  
Jean François Michaud ◽  
Emmanuel Collard ◽  
Daniel Alquier
Keyword(s):  
Process Parameters ◽  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Effective Technique ◽  
Working Pressure ◽  
Inductively Coupled ◽  
Icp Etching ◽  
High Etch Rate ◽  
The Impact

Due to its inert chemical nature, plasma etching is the most effective technique to pattern SiC. In this paper, dry etching of 4H-SiC substrate in Inductively Coupled Plasma (ICP) has been studied in order to evaluate the impact of process parameters on the characteristics of etching such as etch rate and trenching effect. Key process parameters such as platen power and ICP coil power prove to be essential to control the SiC etch rate. On the other hand, the ICP coil power and the working pressure mainly master the trenching effect. Our results enlighten that high etch rate with minimal trenching effect can be obtained using high ICP coil power and low working pressure.

scholarly journals ICP Dry Etching of III-V Nitrides

1997 ◽  
Vol 468 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. M. Donovan ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Dry Etching ◽  
Rf Power ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Dc Bias ◽  
Etch Rates ◽  
Icp Dry Etching

ABSTRACTInductively coupled plasma etching of GaN, AlN, InN, InGaN and InAlN was investigated in CH4/H2/Ar plasmas as a function of dc bias, and ICP power. The etch rates were generally quite low, as is common for III-nitrides in CH4 based chemistries. The etch rates increased with increasing dc bias. At low rf power (150W), the etch rates increased with increasing ICP power, while at 350W rf power, a peak was found between 500 and 750 W ICP power. The etched surfaces were found to be smooth, while selectivities of etch were ≤ 6 for InN over GaN, AlN, InGaN and InAlN under all conditions.

scholarly journals Fabrication and Characterization of Black GaAs Nanoarrays via ICP Etching

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Peishuai Song ◽  
Liangliang Yang ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Fabrication Process ◽  
Etching Process ◽  
Photon Absorption ◽  
Hydrophobic Property ◽  
Water Contact ◽  
Inductively Coupled ◽  
Icp Etching

AbstractGaAs nanostructures have attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate was rarely reported, and most of the preparation processes are complex. Here, we report a black GaAs fabrication process using a simple inductively coupled plasma etching process, with no extra lithography process. The fabricated sample has a low reflectance value, close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.

Comparison Of Dry-Etch Techniques For Gan, Inn, And Ain

1997 ◽  
Vol 483 ◽  
Author(s):  
R. J. Shul ◽  
G. A. Vawter ◽  
C. G. Willison ◽  
M. M. Bridges ◽  
J. W. Lee ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Ion Beam ◽  
High Plasma ◽  
Group Iii ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Etch Rates ◽  
Group Iii Nitride ◽  
Dry Etch

AbstractFabrication of group-III nitride devices relies on the ability to pattern features to depths ranging from ∼1000 Å to > 5 μm with anisotropic profiles, smooth morphologies, selective etching of one material over another, and a low degree of plasma-induced damage. In this study, GaN etch rates and etch profiles are compared using reactive ion etch (RIE), reactive ion beam etching (RIBE), electron cyclotron resonance (ECR), and inductively coupled plasma (ICP) etch systems. RIE yielded the slowest etch rates and sloped etch profiles despite dc-biases > −900 V. ECR and ICP etching yielded the highest rates with anisotropic profiles due to their high plasma flux and the ability to control ion energies independently of plasma density. RIBE etch results also showed anisotropic profiles with slower etch rates than either ECR or ICP possibly due to lower ion flux. InN and AIN etch characteristics are also compared using ICP and RIBE.

Inductively coupled plasma etching for delineation of InAs/GaSb pixels

2012 ◽  
Author(s):  
Jean Nguyen ◽  
John Gill ◽  
Sir B. Rafol ◽  
Alexander Soibel ◽  
Arezou Khoshakhlagh ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled

Manufacture of High Aspect Ratio Bulk Titanium Micro-Parts by Inductively Coupled Plasma Etching

2008 ◽  
Author(s):  
Gang Zhao ◽  
Qiong Shu ◽  
Yue Li ◽  
Jing Chen
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Inductively Coupled Plasma ◽  
Etching Rate ◽  
Sidewall Roughness ◽  
Inductively Coupled ◽  
Icp Etching ◽  
Novel Technology ◽  
Micro Parts ◽  
Etching Mask

A novel technology is developed to fabricate high aspect ratio bulk titanium micro-parts by inductively coupled plasma (ICP) etching. An optimized etching rate of 0.9 μm/min has been achieved with an aspect ratio higher than 10:1. For the first time, SU-8 is used as titanium etching mask instead of the traditional hard mask such as TiO2 or SiO2. With an effective selectivity of 3 and a spun-on thickness beyond 100 μm, vertical etching sidewall and low sidewall roughness are obtained. Ultra-deep titanium etching up to 200 μm has been realized, which is among the best of the present reports. Titanium micro-springs and planks are successfully fabricated with this approach.

Inductively coupled plasma etching of HgCdTe using a CH4-based mixture

2005 ◽  
Vol 34 (6) ◽  
pp. 740-745 ◽  
Author(s):  
E. Laffosse ◽  
J. Baylet ◽  
J. P. Chamonal ◽  
G. Destefanis ◽  
G. Cartry ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled
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