Processing and Characterization of Inorganic Films for Optical Waveguide Components

1999 ◽  
Vol 597 ◽  
Author(s):  
S. Ponoth ◽  
N. Agarwal ◽  
X. Huang ◽  
P. D. Persans ◽  
J. Plawsky

AbstractOptical communications are becoming technologically important on progressively shorter length scales. As computer chip speeds increase longer metal wire interconnects become problematic and may limit device performance. Wide bandwidth optical interconnects may be used to address this problem. Silicon oxide and silicon nitride were explored as prospective optical and processing materials in the making of optical interconnects. Etching of slopes, which would be an important process for making optical interconnects, was studied. Slopes with angles ranging from 5 to 50 degrees were fabricated using a silicon oxide / silicon nitride stack.

2016 ◽  
Vol 28 (9) ◽  
pp. 094014 ◽  
Author(s):  
Li-Hong Liu ◽  
David J Michalak ◽  
Tatiana P Chopra ◽  
Sidharam P Pujari ◽  
Wilfredo Cabrera ◽  
...  

Author(s):  
A. BAGOLINI ◽  
B. MARGESIN ◽  
V. GUARNIERI ◽  
F. GIACOMOZZI ◽  
A. FAES ◽  
...  

2007 ◽  
Vol 1052 ◽  
Author(s):  
Joao Gaspar ◽  
Marek Schmidt ◽  
Jochen Held ◽  
Oliver Paul

AbstractThis paper reports on recent improvements of the bulge and microtensile techniques for the reliable extraction of material parameters such as the Young's modulus E, Poisson's ratio ν, plane strain modulus Eps = E/(1–ν2), prestress σ0, fracture strength μ, Weibull modulus m and strain hardening coefficients n, and on the direct comparison between the two methods. The bulge technique is extended to full wafer measurements enabling throughputs of data with statistical relevance whereas key improvements of a previous fabrication process of microtensile specimens lead now to much higher yields, approaching 100%. Both techniques are applied to an extensive set of materials, brittle and ductile, typically used in MEMS applications. These include thin films of silicon nitride, silicon oxide, polycrystalline silicon and aluminum deposited by techniques such as thermal oxidation, LPCVD, PECVD and PVD.


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