The Microstructure and Nanoindentation Behaviour of TiN/NbN Multilayers

1999 ◽  
Vol 594 ◽  
Author(s):  
J. M. Molina-Aldareguia ◽  
S. J. Lloyd ◽  
Z. H. Barber ◽  
M. G. Blamire ◽  
W. J. Clegg
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Sputter Deposition ◽  
Internal Stresses ◽  
Reactive Magnetron ◽  
Growth Morphology ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

AbstractTiN/NbN multilayers and TiN monolithic films have been grown by UHV reactive magnetron sputter deposition on MgO single crystals. The hardness has been measured by nanoindentation and the as-deposited and deformed structures studied in cross-section using transmission electron microscopy. It has been found that initially the multilayers grow epitaxially with the substrate. However, once the overall film thickness has reached ∼300 nm, epitaxial growth ceases. No increase in hardness with respect to monolithic films of the multilayer components is observed in these multilayers. Experiments on monolithic films of TiN show that the same loss of epitaxy occurs, leading to a reduction in the hardness of the films, and that this change in growth morphology is triggered by the internal stresses induced within the films during deposition.

Beryllium-Based Multilayer Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
D. G. Stearns ◽  
K. M. Skulina ◽  
M. Wall ◽  
C. S. Alford ◽  
R. M. Bionta ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Normal Incidence ◽  
Sputter Deposition ◽  
Multilayer Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter

ABSTRACTMultilayer (ML) structures composed of Mo-Be, Ru-Be and Rh-Be with bilayer periods of - 6 nm have been grown using dc magnetron sputter deposition. The ML microstructure has been characterized using x-ray diffraction and high-resolution transmission electron microscopy, and the normal incidence reflectivity has been measured at soft x-ray wavelengths.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

The use of an energy-filtering electron microscope to reduce chromatic aberration in images of thick biological specimens

1986 ◽  
Vol 44 ◽  
pp. 88-91
Author(s):  
L. D. Peachey ◽  
J. P. Heath ◽  
G. Lamprecht
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Beam ◽  
Cross Section ◽  
Electron Scattering ◽  
Chromatic Aberration ◽  
Image Resolution ◽  
Incident Electron Energy ◽  
Energy Filtering ◽  
Transmission Electron

Biological specimens of cells and tissues generally are considerably thicker than ideal for high resolution transmission electron microscopy. Actual image resolution achieved is limited by chromatic aberration in the image forming electron lenses combined with significant energy loss in the electron beam due to inelastic scattering in the specimen. Increased accelerating voltages (HVEM, IVEM) have been used to reduce the adverse effects of chromatic aberration by decreasing the electron scattering cross-section of the elements in the specimen and by increasing the incident electron energy.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Properties of Al Films Depend on Substrate Temperature by DC Magnetron Sputter Deposition

2013 ◽  
Vol 662 ◽  
pp. 413-416
Author(s):  
Yi Shen ◽  
Ruo He Yao
Keyword(s):  
Grain Size ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Cross Section ◽  
Sputter Deposition ◽  
Surface Profiling ◽  
Magnetron Sputter Deposition ◽  
Magnetron Sputter ◽  
Substrate Temperatures

Al films were prepared by DC magnetron sputter deposition at different substrate temperatures. The sheet resistance of the films was measured by four point probe sheet resistance meter, and the film thickness, which was obtained by surface profiling system. The surface and cross-section morphology of the films was observed by AFM and FESEM. As a result, the resistivity of the films decreases obviously as the substrate temperature increases gradually. The higher substrate temperature is, the rougher the films surface is and the larger the grain size is.

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