Stress Effects on Al and Al(Cu) Thin Film Grain-Boundary Diffusion

1999 ◽  
Vol 594 ◽  
Author(s):  
X.-Y. Liu ◽  
C.-L. Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Atomistic Simulations ◽  
Stress Effects ◽  
Stress States ◽  
And Migration ◽  
Cu Thin Film

AbstractStress effects on grain-boundary diffusion in Al and Al(Cu) thin films are evaluated through atomistic simulations. Specifically, the grain-boundary vacancy formation and migration and interstitial migration energetics are obtained as a function of stress states in thin film. In general, the activation energies vary at a rate of 0.1 eV per 1.0 % strain at the grain boundary investigated, indicating the possible impact on electromigration phenomenon in these films.

Grain boundary diffusion in bilayered Ag/Cu thin film under diffusion-induced and intrinsic stresses

2021 ◽  
Vol 96 (5) ◽  
pp. 055706
Author(s):  
Songyou Lian ◽  
Congkang Xu ◽  
Jiangyong Wang ◽  
Hendrik C Swart ◽  
Jacobus J Terblans
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Cu Thin Film

Investigation of Grain Boundary Diffusion in Thin Films by SNMS Technique

2011 ◽  
Vol 312-315 ◽  
pp. 1208-1215 ◽  
Author(s):  
Dezső L. Beke ◽  
A. Lakatos ◽  
G. Erdélyi ◽  
A. Makovecz ◽  
G.A. Langer ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Numerical Solutions ◽  
Grain Boundary Diffusion ◽  
Bimodal Structure ◽  
Layer Interface ◽  
Cap Layer ◽  
Film Interface

It was shown more recently in our Laboratory [1,2,3] that having a substrate/diffusant/thin-film/cap-layer structure (the thin film was typically several 10 nm thick, with the same order of magnitude of grain size; the refractory metal cap layer was used just to avoid the oxidation), first the diffusant atoms migrated very fast across the thin film and segregated at the film/cap-layer interface. The accumulated atoms at the film/cap layer interface form a secondary diffusion reservoir and atoms diffuse back to the layer. Later on, the thin film was gradually filled up with the diffusing atoms and composition depth profiles, determined by Secondary Neutral Mass Spectroscopy (SNMS), showed a maximum at the cap layer-thin film interface. The accumulated atoms at this interface formed a secondary diffusion reservoir and atoms diffused back to the layer. These observations can be interpreted supposing a bimodal grain boundary structure with different (fast and low) diffusivities. The observed grain boundary diffusion phenomena can be classified as C-type diffusion. The appearance of the peak observed at the cap layer interface can be used as a tool to determine the grain boundary diffusivity along the fast boundaries. Because the fast boundaries were saturated in the first stage of the process, this back-diffusion took place along the low-diffusivity boundaries only. Thus the SNMS depth-profiling is a good method to determine grain boundary diffusivities in a bimodal structure. In addition, from the overall impurity content inside the film the segregation can also be estimated, if the bulk solubility is low and the GB density is known. Numerical simulations of C-type GB diffusion in thin films with a bimodal structure confirmed that the interpretation of the result depicted above is reasonable [4]. In order to estimate roughly the GB diffusion data we determined the fast diffusivity using the first appearance method. The lower diffusivity was determined from the time evolution of the broadening of the diffusant/thin film interface. In addition both (slow and fast) diffusivities were also estimated from fitting numerical solutions obtained in [4] too.

scholarly journals Synthesis of high-entropy alloy thin films via grain boundary diffusion–assisted solid-state alloying

2022 ◽  
Vol 207 ◽  
pp. 114302
Author(s):  
Seungjin Nam ◽  
Sang Jun Kim ◽  
Moon J. Kim ◽  
Manuel Quevedo-Lopez ◽  
Jun Yeon Hwang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
High Entropy Alloy ◽  
High Entropy

Grain Boundary Diffusion in Co/Cu and Co/Cr Magnetic Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
John G. Holl-Pellerin ◽  
S.G.H. Anderson ◽  
P.S. Ho ◽  
K.R. Coffey ◽  
J.K. Howard ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Photoelectron Spectroscopy ◽  
Boundary Diffusion ◽  
Magnetic Thin Films ◽  
Grain Boundary Diffusion ◽  
X Ray ◽  
Before And After

ABSTRACTX-ray photoelectron spectroscopy (XPS) has been used to investigate grain boundary diffusion of Cu and Cr through 1000 Å thick Co films in the temperature range of 325°C to 400°C. Grain boundary diffusivities were determined by modeling the accumulation of Cu or Cr on Co surfaces as a function of time at fixed annealing temperature. The grain boundary diffusivity of Cu through Co is characterized by a diffusion coefficient, D0gb, of 2 × 104 cm2/sec and an activation energy, Ea,gb, of 2.4 eV. Similarly, Cr grain boundary diffusion through Co thin films occurs with a diffusion coefficient, Do,gb, of 6 × 10-2cm2/sec and an activation energy, Ea,gb of 1.8 eV. The Co film microstructure has been investigated before and after annealing by x-ray diffraction and transmission electron Microscopy. Extensive grain growth and texturing of the film occurred during annealing for Co deposited on a Cu underlayer. In contrast, the microstructure of Co deposited on a Cr underlayer remained relatively unchanged upon annealing. Magnetometer Measurements have shown that increased in-plane coercivity Hc, reduced remanence squareness S, and reduced coercive squareness S* result from grain boundary diffusion of Cu and Cr into the Co films.

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