Grain‐boundary diffusion modeling and efficiency evaluation of thin‐film diffusion barriers considering microstructure effects

1995 ◽  
Vol 78 (7) ◽  
pp. 4438-4443 ◽  
Author(s):  
Xiang Gui ◽  
Loran J. Friedrich ◽  
Steven K. Dew ◽  
Michael J. Brett ◽  
Tom Smy
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Diffusion Barriers ◽  
Grain Boundary Diffusion ◽  
Efficiency Evaluation ◽  
Diffusion Modeling ◽  
Film Diffusion ◽  
Microstructure Effects ◽  
Thin Film Diffusion

scholarly journals Grain boundary diffusion and its relation to segregation of multiple elements in yttrium aluminum garnet

2020 ◽  
Vol 32 (6) ◽  
pp. 675-696
Author(s):  
Joana Polednia ◽  
Ralf Dohmen ◽  
Katharina Marquardt
Keyword(s):  
Grain Boundary ◽  
Boundary Diffusion ◽  
Yttrium Aluminum Garnet ◽  
Bulk Diffusion ◽  
Element Distribution ◽  
Grain Boundary Diffusion ◽  
Yttrium Aluminum ◽  
Detectable Concentration ◽  
Thin Film Diffusion ◽  
Strong Segregation

Abstract. We studied grain boundary diffusion and segregation of La, Fe, Mg, and Ti in a crystallographically defined grain boundary in yttrium aluminum garnet (YAG). Bi-crystals were synthesized by wafer bonding. Perpendicular to the grain boundary, a thin-film diffusion source of a La3.60Al4.40O12 was deposited by pulsed laser deposition. Diffusion anneals were performed at 1000 and 1450 ∘C. Via a gas phase small amounts of elements were added during the experiment. The element concentration distributions in our bi-crystals were mapped using analytical transmission electron microscopy (ATEM). Our results show strong segregation of La and Ti at the grain boundary. However, in the presence of Ti, the La concentrations dropped below the detection limit. Quantitative element distribution profiles along and across the grain boundary were fitted by a numerical diffusion model for our bi-crystal geometry that considers the segregation of elements into the grain boundary. The shape of the diffusion profiles of Fe requires the presence of two diffusion modes, e.g., the co-diffusion of Fe2+ as well as Fe3+. The absence of a detectable concentration gradient along the grain boundary in many experiments allows a minimum value to be determined for the product of sDgb. The resulting sDgb are a minimum of 7 orders of magnitude larger than their respective volume diffusion coefficient, specifically for La = 10−14 m2 s−1, Fe = 10−11 m2 s−1, Mg = Si = 10−12 m2 s−1, and Ti = 10−14 m2 s−1 at 1450 ∘C. Additionally, we model the effect of convolution arising from the given spatial resolution of our analysis with the resolution of our modeled system. Such convolution effects result in a non-unique solution for the segregation coefficient, e.g., for example for Mg between 2–3. Based on our data we predict that bulk diffusion of impurities in a mono-phase polycrystalline aggregate of YAG is effectively always dominated by grain boundary diffusion.

Grain boundary diffusion in bilayered Ag/Cu thin film under diffusion-induced and intrinsic stresses

2021 ◽  
Vol 96 (5) ◽  
pp. 055706
Author(s):  
Songyou Lian ◽  
Congkang Xu ◽  
Jiangyong Wang ◽  
Hendrik C Swart ◽  
Jacobus J Terblans
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Cu Thin Film

Grain boundary Diffusion of Ni through Pd2Si

1983 ◽  
Vol 25 ◽  
Author(s):  
E. C. Zingu ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Diffusion ◽  
Rutherford Backscattering Spectrometry ◽  
High Mobility ◽  
Grain Boundary Diffusion ◽  
Rutherford Backscattering

ABSTRACTInterdiffusion in the Si<100>/Pd2Si/Ni and Si<111>/Pd2Si/Ni thin film systems has been investigated using Rutherford backscattering spectrometry. Nickel is found to diffuse along the grain boundaries of polycrystalline Pd2Si upon which it accumulates at the Si<100>Pd2Si interface. The high mobility of Ni compared to that of si suggests that Pd diffuses faster than Si along the Pd2Si grain boundaries. An activation energy of 1.2 eV is determined for Ni grain boundary diffusion in Pd2Si.

Failure mechanisms of TiN thin film diffusion barriers

1988 ◽  
Vol 164 ◽  
pp. 417-428 ◽  
Author(s):  
N. Kumar ◽  
K. Pourrezaei ◽  
B. Lee ◽  
E.C. Douglas
Keyword(s):  
Thin Film ◽  
Failure Mechanisms ◽  
Diffusion Barriers ◽  
Film Diffusion ◽  
Thin Film Diffusion
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