A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction

1997 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
M. Shahidul Haque ◽  
Hameed A. Naseem ◽  
Ajay P. Malshe ◽  
William D. Brown
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

Morphology of heavily B-doped diamond films

1993 ◽  
Vol 8 (11) ◽  
pp. 2845-2857 ◽  
Author(s):  
Koichi Miyata ◽  
Kazuo Kumagai ◽  
Kozo Nishimura ◽  
Koji Kobashi
Keyword(s):  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Si Substrates ◽  
Surface Morphologies

B-doped diamond films were synthesized by microwave plasma chemical vapor deposition using a mixture of methane (0.5% or 1.2%) and diborane (B2H6) below 50 ppm on either Si substrates or undoped diamond films that had been synthesized using 0.5% or 1.2% methane. The surface morphologies of the synthesized films were observed by Secondary Electron Microscopy, and the infrared absorption and Raman spectra were measured. It was found that when diborane concentration was low, B-doped films preferred (111) facets. On the other hand, high diborane concentrations resulted in a deposition of needle-like material that was identified as graphite by x-ray diffraction.

Growth of highly (111)-oriented, highly coalesced diamond films on platinum (111) surface: A possibility of heteroepitaxy

1996 ◽  
Vol 11 (12) ◽  
pp. 2955-2956 ◽  
Author(s):  
Yoshihiro Shintani
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Scanning Electron

A highly (111)-oriented, highly coalesced diamond film was grown on platinum (111) surface by microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy and x-ray diffraction analyses revealed that the (111) diamond facets were azimuthally oriented epitaxially with respect to the orientation of the Pt(111) domain underneath, with the neighboring facets of diamond being coalesced with each other. The film was confirmed as diamond using Raman spectroscopy.

X-ray Photoelectron Spectroscopy of the Interface Between Diamond Films and Tantalum Substrates

1993 ◽  
Vol 317 ◽  
Author(s):  
M.M. Waitew ◽  
S. Ismat Shah
Keyword(s):  
Photoelectron Spectroscopy ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Growth ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Stages Of Growth ◽  
Diamond Peak

ABSTRACTDiamond films were deposited in a microwave plasma chemical vapor deposition (MPCVD) system on Ta substrates using a mixture of hydrogen and methane gases. The films were grown for varying lengths of time to provide samples with no diamond growth to a continuous diamond film. These films were analyzed using X-ray photoelectron spectroscopy (XPS) in order to understand the time dependent interactions between the substrate and the incoming carbon flux. Photoelectron peaks in the Ta 4f, C Is and Ols regions have been analyzed. In the initial stages of growth, a layer of carbide forms on the substrate. As the substrate becomes supersaturated with carbon, graphite starts to form on the surface. A diamond peak begins to appear after about 30 Minutes of deposition.

Fibrinogen adsorption onto microwave plasma chemical vapor deposited diamond films

2004 ◽  
Vol 13 (4-8) ◽  
pp. 595-599 ◽  
Author(s):  
J.M. Garguilo ◽  
B.A. Davis ◽  
M. Buddie ◽  
F.A.M. Köck ◽  
R.J. Nemanich
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Chemical Vapor Deposited ◽  
Fibrinogen Adsorption

Neutron irradiation and annealing of 10B doped chemical vapor deposited diamond films

1995 ◽  
Vol 10 (10) ◽  
pp. 2523-2530 ◽  
Author(s):  
S.A. Khasawinah ◽  
Galina Popovici ◽  
J. Farmer ◽  
T. Sung ◽  
M.A. Prelas ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Diamond Powder ◽  
Unirradiated Sample ◽  
High Fluence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chemical Vapor Deposited ◽  
Hot Filament

10B doped diamond films grown by hot filament chemical vapor deposition were neutron irradiated at moderately high fluence levels. The as-irradiated and annealed samples, along with an unirradiated sample, were analyzed using Raman spectroscopy and x-ray diffraction. It was found that a non-diamond amorphous phase was formed on irradiation. This phase transformed back to diamond on annealing. No graphite formation was observed. A comparison with nanodiamond powder was made. A similarity between irradiated diamond films and nanocrystalline diamond powder is discussed.

Diamond Coated on Cobalt-Deficient Gradient Tungsten Carbide

2007 ◽  
Vol 280-283 ◽  
pp. 1889-1892
Author(s):  
Li Gou ◽  
Ji Lei Zhu ◽  
Jun Guo Ran ◽  
Suang Feng Yan
Keyword(s):  
Tungsten Carbide ◽  
Deposition Time ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Cobalt Content ◽  
Diamond Coatings ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition

In order to improve the adhesion between diamond coatings and cemented tungsten carbide (WC-Co) substrates, the diamond coatings were deposited on one kind of cobalt-deficient gradient WC-Co by the microwave plasma chemical vapor deposition (MPCVD). Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were used to characterize the diamond coatings. The results showed dense, well facet diamond coatings. The cobalt content at the surface of substrate was measured by electron probe microanalysis. It was found that Co did not largely move to the surface as usual with deposition time increasing compared with the conventional tungsten carbide; The cobalt content at the surface of substrate after deposition (about 1 wt %) was lower than before (3.42wt%), which improved diamond coating’s adhesion against the tungsten carbide substrate.

X-Ray Diffraction Analysis Of Strain And Mosaic Structure In (001) Oriented Homoepitaxial Diamond Films

1996 ◽  
Vol 423 ◽  
Author(s):  
W. Brock Alexander ◽  
Pehr E. Pehrsson ◽  
David Black ◽  
James E. Butler
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
Film Deposition ◽  
Mosaic Structure ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
High Pressure High Temperature

AbstractHomoepitaxial diamond films were grown on (001) oriented high pressure, high temperature type lb diamond by microwave plasma-assisted chemical vapor deposition to thicknesses of 27–48 μm. Substrates were polished off-axis 5.5° ±0.5° in the [100] direction prior to film deposition. Some of the diamond films developed tensile stress sufficiently large to result in cracking on { 111 } cleavage planes, while other films exhibited compressive stress. The strain and mosaic structure were measured with seven crystal x-ray diffraction. This characterization tool allowed the separation of misorientation effects from those of lattice parameter variation. Films exhibited smaller (˜88 ppm) and larger (˜27 ppm) perpendicular lattice parameters relative to the HPHT substrates. A cross-sectional approach for probing strain in diamond films with micro-Raman analysis was used to show stress distributions (˜100–300 MPa) through the thickness of the film.

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