Film Stress Influence of Bilayer Metallization on the Structure of RF MEMS Switches

1999 ◽  
Vol 594 ◽  
Author(s):  
R. E. Strawser ◽  
R. Cortez ◽  
M. J. O'Keefe ◽  
K. D. Leedy ◽  
J. L. Ebel ◽  
...  
Keyword(s):  
Structural Integrity ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Actuation Voltage ◽  
Stress Gradient ◽  
Film Stress ◽  
Electrical Performance ◽  
Cantilever Beams ◽  
Mems Switches ◽  
Clamped Beams

AbstractThe performance of microelectromechanical systems (MEMS) switches is highly dependent on the switches' constituent materials. The switch material must be able to provide both structural integrity and high electrical conductivity. Cantilever beams, doubly clamped beams, and membranes are typical MEMS structures used in microwave/millimeter wave applications. In this study, cantilever and doubly clamped beam microswitches were fabricated on GaAs substrates using evaporated bilayers of titanium and gold metallization in which the total thickness was held constant at 1.5 μm while the gold thickness varied from 0.5 μm to 1.5 μm. The lengths of the cantilevers varied from 300 to 500 μm and the doubly clamped beams varied from 600 to 800 μm. An upward deflection of the gold dominated cantilever beams indicated an increasing tensile stress gradient. Results of microwave characterization demonstrated higher switch isolation (off-resistance) for shorter beam switches at the expense of higher insertion loss (on-resistance) and actuation voltage. A discussion of the observed released microswitch structure within the context of the measured film stresses and electrical performance will be presented.

The Influence of Ambient Pressure on the Dynamic Response of RF MEMS Switches

2010 ◽  
Author(s):  
Avihay Ohana ◽  
Oren Aharon ◽  
Ronen Maimon ◽  
Boris Nepomnyashchy ◽  
Lior Kogut
Keyword(s):  
Rf Mems ◽  
Ambient Pressure ◽  
Actuation Voltage ◽  
Operating Conditions ◽  
Experimental Results ◽  
Release Time ◽  
Q Factor ◽  
Optimal Operating ◽  
Mems Switches ◽  
Rf Mems Switches

A study of the dynamic behavior of an RF MEMS switch is presented at different operating conditions. Experimental results for the actuation and release time and Q-factor as a function of the ambient pressure and actuation voltage are compared to theoretical predictions based on existing model. Optimal operating conditions (ambient pressure and actuation voltage) are determined based on two criterions: minimal actuation and release time and minimal oscillations upon switch release. In light of the experimental results optimal operating conditions determined to be 1.4Vpi at a pressure of a few torrs where actuation and release time are equal and short enough with no release oscillations. Three pressure regimes are identified with characteristic behavior of the Q-factor and actuation and release time in each regime. These behaviors have significant implications in many MEMS devices, especially RF MEMS switches.

Experimental Investigation of Dynamic Response of RF-MEMS Switches

2004 ◽  
Author(s):  
O. Burak Ozdoganlar ◽  
David S. Epp ◽  
Christopher W. Dyck
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Electrical Contacts ◽  
Mode Shapes ◽  
Main Function ◽  
Capacitive Switches ◽  
Mems Switches ◽  
Damping Characteristics ◽  
Rf Mems Switches ◽  
Opening And Closing

Ohmic and capacitive switches constitute an important segment of radio frequency microelectromechanical systems (RF-MEMS) components. The main function of these switches is to provide very rapid opening and closing of electrical contacts. To fulfill this requirement, the structural dynamics and coupled-physics response of candidate switch designs must be thoroughly understood. This paper presents a set of dynamic experimentation of two RF-MEMS ohmic switches with different geometries to determine their natural frequencies, mode shapes, and damping characteristics at pressures spanning from vacuum to atmospheric. The experimental facility used for the tests is also described in detail.

Design of H-shaped low actuation-voltage RF-MEMS switches

2006 ◽  
Author(s):  
Anatoliy Batmanov ◽  
Ehab K. I. Hamad ◽  
Edmund P. Burte ◽  
Abbas S. Omar
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Mems Switches ◽  
Rf Mems Switches

Influence of temperature on the actuation voltage of RF-MEMS switches

2013 ◽  
Vol 53 (5) ◽  
pp. 706-711 ◽  
Author(s):  
V. Mulloni ◽  
F. Solazzi ◽  
F. Ficorella ◽  
A. Collini ◽  
B. Margesin
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Influence Of Temperature ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Influence Of Temperature On

Micro/Nanotribology of RF MEMS Switches

2004 ◽  
Author(s):  
Steven T. Patton ◽  
Kalathil C. Eapen ◽  
Jeffrey S. Zabinski
Keyword(s):  
Electric Current ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Cost ◽  
Operating Conditions ◽  
Great Promise ◽  
Rf Switches ◽  
Mems Switches ◽  
Adhesion Contact ◽  
Rf Mems Switches

Microelectromechanical systems (MEMS) radio frequency (RF) switches hold great promise in a myriad of commercial, aerospace, and military applications. MEMS switches offer important advantages over current electromechanical and solid state technologies including high linearity, low insertion loss, low power consumption, good isolation, and low cost [1–21]. However, there is little fundamental understanding of the factors determining the performance and reliability of these devices. Our previous work investigated fundamentals of hot-switched direct current (DC) gold (Au) contacts using a modified microadhesion apparatus as a switch simulator [1]. Those experiments were conducted under precisely controlled operating conditions in air at MEMS-scale forces with an emphasis on the role of surface forces and electric current on switch performance, reliability, and durability [1]. Electric current had a profound effect on deformation mechanisms, adhesion, contact resistance (R), and reliability/durability. At low current (1–10 μA), asperity creep and switching induced adhesion were the most important observations, whereas, at high current (1–10 mA), lack of adhesion and switch shorting by nanowire formation were prominent [1].

scholarly journals Low-Voltage and High-Reliability RF MEMS Switch with Combined Electrothermal and Electrostatic Actuation

Micromachines ◽  
2021 ◽  
Vol 12 (10) ◽  
pp. 1237
Author(s):  
Yong Zhu ◽  
Jitendra Pal
Keyword(s):  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Low Voltage ◽  
High Reliability ◽  
Actuation Voltage ◽  
Electrostatic Actuation ◽  
Mems Switch ◽  
Thermal Actuation ◽  
Electrothermal Actuation ◽  
Power Handling Capability

In this paper, we report a novel laterally actuated Radio Frequency (RF) Microelectromechanical Systems (MEMS) switch, which is based on a combination of electrothermal actuation and electrostatic latching hold. The switch takes the advantages of both actuation mechanisms: large actuation force, low actuation voltage, and high reliability of the thermal actuation for initial movement; and low power consumption of the electrostatic actuation for holding the switch in position in ON state. The switch with an initial switch gap of 7 µm has an electrothermal actuation voltage of 7 V and an electrostatic holding voltage of 21 V. The switch achieves superior RF performances: the measured insertion loss is −0.73 dB at 6 GHz, whereas the isolation is −46 dB at 6 GHz. In addition, the switch shows high reliability and power handling capability: the switch can operate up to 10 million cycles without failure with 1 W power applied to its signal line.

ON ELECTROMECHANICAL PERFORMANCE OF LOW ACTUATION VOLTAGE RF MEMS SWITCHES

2005 ◽  
Author(s):  
K. J RANGRA ◽  
L. LORENZELLI ◽  
C. COLLINI ◽  
B. MARGESIN ◽  
F. GIACOMOZZI ◽  
...  
Keyword(s):  
Rf Mems ◽  
Actuation Voltage ◽  
Mems Switches ◽  
Rf Mems Switches ◽  
Electromechanical Performance
Sign in / Sign up

Export Citation Format

Share Document