Characterization of nitrided silicon-silicon dioxide interfaces

1999 ◽  
Vol 591 ◽  
Author(s):  
M. L. Polignano ◽  
M. Alessandri ◽  
D. Brazzelli ◽  
B. Crivelli ◽  
G. Ghidini ◽  
...  
Keyword(s):  
Surface State ◽  
Surface Recombination ◽  
State Density ◽  
Constant Current ◽  
Surface Recombination Velocity ◽  
State Reduction ◽  
Surface State Density ◽  
Recombination Velocity ◽  
Silicon Interface

ABSTRACTA newly-developed technique for the simultaneos characterization of the oxide-silicon interface properties and of bulk impurities was used for a systematic study of the nitridation process of thin oxides. This technique is based upon surface recombination velocity measurements, and does not require the formation of a capacitor structure, so it is very suitable for the characterization of as-grown interfaces.Oxides grown both in dry and in wet enviroments were considered, and nitridation processes in N2O and in NO were compared to N2 annealing processes. The effect of nitridation temperature and duration were also studied, and RTO/RTN processes were compared to conventional furnace nitridation processes.Surface recombination velocity was correlated with nitrogen concentration at the oxide-silicon interface obtained by Secondary Ion Mass Spectroscopy (SIMS) measurements. Surface recombination velocity (hence surface state density) decreases with increasing nitrogen pile-up at the oxide-silicon interface, indicating that in nitrided interfaces surface state density is limited by nitridation. NO treatments are much more effective than N2O treatments in the formation of a nitrogen-rich interface layer and, as a consequence, in surface state reduction.Surface state density was measured in fully processed wafers before and after constant current stress. After a complete device process surface states are annealed out by hydrogen passivation, however they are reactivated by the electrical stress, and surface state results after stress were compared with data of surface recombination velocity in as-processed wafers.

Characterization of Plasma Induced Damage and Strain on InP Patterns and Their Impact on Luminescence

MRS Advances ◽  
2018 ◽  
Vol 3 (57-58) ◽  
pp. 3373-3378
Author(s):  
Marc Fouchier ◽  
Maria Fahed ◽  
Erwine Pargon ◽  
Névine Rochat ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Surface Recombination ◽  
Peak Shift ◽  
Surface Recombination Velocity ◽  
Degree Of Polarization ◽  
Strain Anisotropy ◽  
Luminescence Signal ◽  
Micron Size ◽  
Recombination Velocity ◽  
Cathodoluminescence Intensity

ABSTRACTThe effect of damage induced by plasma etching on the cathodoluminescence intensity of micron-size InP features is studied. At the etched bottom, it is found that the hard mask stripping process is sufficient to recover the luminescence. Within features, the presence of sidewalls reduces luminescence intensity due to additional non-radiative surface recombinations. For a n-doped sample, a carrier diffusion length of 0.84 μm and a reduced nonradiative surface recombination velocity of 2.58 are calculated. Hydrostatic strain within the etched features is measured using the peak shift of the luminescence signal, while in plane strain anisotropy is obtained from its degree of polarization, both with a resolution of about 100 nm.

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

1990 ◽  
Vol 182 ◽  
Author(s):  
R. Pandya ◽  
K. Shahzad
Keyword(s):  
Thin Films ◽  
Polycrystalline Silicon ◽  
Surface Recombination ◽  
Surface Recombination Velocity ◽  
Qualitative Explanation ◽  
Silicon Thin Films ◽  
Pl Spectrum ◽  
Recombination Velocity ◽  
Quartz Substrates

AbstractPhotoluminescence (PL) measurements have been carried out in hydrogenated and as deposited polycrystalline silicon thin films deposited on quartz substrates. Behavior of the PL spectrum as a function of temperature and intensity in the hydrogenated samples is reported. A mechanism that provides a qualitative explanation for the observed PL results is described. In the unhydrogenated sample the signal was much weaker and we were unable to observe any signals over an appreciable range of intensity and temperatures. The cause for much lower signals in the unhydrogenated sample is most likely due to higher surface recombination velocity.

Electrochemical Sulfur Treatments of GaAs Using Na2S and (NH4)2S Solutions: A Surface Chemical Study

1992 ◽  
Vol 282 ◽  
Author(s):  
J. Yota ◽  
V. A. Burrows
Keyword(s):  
Electronic Properties ◽  
Photoelectron Spectroscopy ◽  
Surface Film ◽  
Surface Recombination ◽  
Chemical Study ◽  
Lower Surface ◽  
State Density ◽  
Gaas Surface ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

ABSTRACTChemical sulfur treatments of GaAs have been shown to improve the GaAs surface electronic properties. These treatments result in lower surface state density, lower surface recombination velocity, and shifting or unpinning of the Fermi level, in addition to improvement in the performance of devices. However, there is still considerable controversy regarding the chemical nature of the surface film which results from this chemical sulfidation. It has been shown that this film is not stable chemically and electronically. The improved surface electronic properties decay with time and are sensitive to the chemical environment of the material. In this study, using surface infrared reflection spectroscopy (SIRS) and x-ray photoelectron spectroscopy (XPS), we have investigated the electrochemical sulfidation of GaAs as a possible new method to produce a GaAs surface that is stable chemically and electronically. We have found that anodic treatments with Na2S and (NH4S solutions result in the removal of the pre-existing oxide of GaAs and the formation of films comprising sulfur, sodium carbonate, ammonium thiosulfate, and sulfide and sulfur-oxygen compounds of arsenic. Rinsing the GaAs with water removes the bulk of the film, leaving behind a surface on which only arsenic sulfide was detected.

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