Electrical Transport Studies of the Hydrogen-Related Compensating Donor in B-Doped Silicon Diodes

1985 ◽  
Vol 59 ◽  
Author(s):  
A. J. Tavendale ◽  
A. A. Williams ◽  
D. Alexiev ◽  
S. J. Pearton
Keyword(s):  
Electrical Transport ◽  
Deep Level ◽  
Forward Bias ◽  
Carrier Injection ◽  
Transport Studies ◽  
Deuterium Substitution ◽  
Secondary Ion ◽  
Positively Charged ◽  
Donor Charge ◽  
Field Drift

ABSTRACTTransport of the hydrogen-related, acceptor-compensating defect has been observed in reverse-bias annealed Al-gate Schottky and n+-P diodes from hydrogenated, B-doped p-Si. Secondary ion mass spectroscopy (SIMS) profiling (deuterium substitution) confirmed field-aided migration. Significant differences in field transport (and thermal diffusion) between diodes from Hand D-treated p-Si(B) qualitatively indicates a monatomic species. The effect is interpreted as field drift of a positively charged species, possibly H+, with a donor charge state in the upper-half band gap, in conflict with long-held theory predicting very deep level activity. Acceptor compensation is unstable under minority (electron) carrier injection by forward bias or illumination at 25°C, supporting the acceptor-protonic trap pair model (A-H+) of Sah, Pan and Hsu [J. Appl. Phys. 57, 5148 (1985)].

scholarly journals The Study of Deep Level Traps and Their Influence on Current Characteristics of InP/InGaAs Heterostructures

Nanomaterials ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 1141
Author(s):  
Xiaohong Zhao ◽  
Hongliang Lu ◽  
Manli Zhao ◽  
Yuming Zhang ◽  
Yimen Zhang
Keyword(s):  
Computer Aided Design ◽  
Proton Irradiation ◽  
Deep Level ◽  
Forward Bias ◽  
Damage Mechanism ◽  
Monte Carlo Code ◽  
Electron Capture Cross Section ◽  
Current Increase ◽  
Current Characteristics ◽  
Recombination Current

The damage mechanism of proton irradiation in InP/InGaAs heterostructures was studied. The deep level traps were investigated in detail by deep level transient spectroscopy (DLTS), capacitance–voltage (C–V) measurements and SRIM (the stopping and range of ions in matter, Monte Carlo code) simulation for non-irradiated and 3 MeV proton-irradiated samples at a fluence of 5 × 1012 p/cm2. Compared with non-irradiated samples, a new electron trap at EC-0.37 eV was measured by DLTS in post-irradiated samples and was found to be closer to the center of the forbidden band. The trap concentration in bulk, the interface trap charge density and the electron capture cross-section were 4 × 1015 cm−3, 1.8 × 1012 cm−2, and 9.61 × 10−15 cm2, respectively. The deep level trap, acting as a recombination center, resulted in a large recombination current at a lower forward bias and made the forward current increase in InP/InGaAs heterostructures for post-irradiated samples. When the deep level trap parameters were added into the technology computer-aided design (TCAD) simulation tool, the simulation results matched the current–voltage measurements data well, which verifies the validity of the damage mechanism of proton irradiation.

Electrical Transport Studies of Copper Mercuric Iodide

1983 ◽  
Vol 77 (1) ◽  
pp. 405-412 ◽  
Author(s):  
H. B. Lal ◽  
O. P. Srivastava
Keyword(s):  
Electrical Transport ◽  
Mercuric Iodide ◽  
Transport Studies

C-V and DLTS Analyses of Trap-Induced Graded Junctions: The Case of Al+ Implanted JTE p+n 4H-SiC Diodes

2009 ◽  
Vol 615-617 ◽  
pp. 469-472
Author(s):  
Filippo Fabbri ◽  
Francesco Moscatelli ◽  
Antonella Poggi ◽  
Roberta Nipoti ◽  
Anna Cavallini
Keyword(s):  
Depth Distribution ◽  
Minority Carrier ◽  
Deep Level ◽  
Forward Bias ◽  
Depth Range ◽  
Standard Configuration ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Graded Junction ◽  
Dlts Spectra

Capacitance versus Voltage (C-V) and Deep Level Transient Spectroscopy (DLTS) measurements of Al+ implanted p+n diodes with Al+ implanted Junction Termination Extension are here studied. These diodes present C-V characteristics like graded junction for low forward bias values, i.e. > 0.4 V , or like abrupt junctions for large reverse bias, i.e. between 0.4V and -10V. The depth range of the graded junction, computed by the capacitance values, is much larger than the simulated tail of the ion implanted Al+ profile. DLTS spectra have been measured both in injection and standard configuration and always show minority carrier traps in the temperature range 0-300K. Three are the minority carrier related peaks, one attributed to the Al acceptor and the others to the D and D1 defects. The depth distribution of these hole traps will be discussed with respect to the apparent carrier concentration, obtained by C-V analysis.

Evolution of Charged Gap Statesin a- Si:H Under Light Exposure

2003 ◽  
Vol 762 ◽  
Author(s):  
M. Zeman ◽  
V. Nádaždy ◽  
R.A.C.M.M. van Swaaij ◽  
R. Durný ◽  
J.W. Metselaar
Keyword(s):  
Deep Level ◽  
Light Exposure ◽  
Dark Conductivity ◽  
Initial Energy ◽  
Energy Distributions ◽  
Transient Spectroscopy ◽  
Induced Changes ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Positively Charged

AbstractThe charge deep-level transient spectroscopy (Q-DLTS) experiments on undoped hydrogenated amorphous silicon (a-Si:H) demonstrate that during light soaking the states in the upper part of the gap disappear, while additional states around and below midgap are created. Since no direct correlation is observed in light-induced changes of the three groups of states that we identify from the Q-DLTS signal, we believe that we deal with three different types of defects. Positively charged states above midgap are related to a complex formed by a hydrogen molecule and a dangling bond. Negatively charged states below midgap are attributed to floating bonds. Various trends in the evolution of dark conductivity due to light soaking indicate that the kinetics of light-induced changes of the three gap-state components depend on their initial energy distributions and on the spectrum and intensity of light during exposure.

Fabrication and Characterization Studies of Semiconductor-Impregnated Porous Vycor Glass

1989 ◽  
Vol 164 ◽  
Author(s):  
C. A. Huber ◽  
T. E. Huber ◽  
A. P. Salzberg ◽  
J. A. Perez
Keyword(s):  
Electrical Transport ◽  
Quantum Confinement ◽  
Characteristic Size ◽  
Vycor Glass ◽  
New Class ◽  
Transport Studies ◽  
Porous Vycor Glass ◽  
Characterization Studies ◽  
Fabrication And Characterization ◽  
Interconnected Pores

AbstractPorous Vycor glass has been impregnated with semiconductors by pressure forcing the nonwetting semiconductor melt into the interconnected pores. Dense semiconductor mesh-like microstructures with a characteristic size of 50 Å can be fabricated by this technique. Measurements are reported which show the composites are suitable for both optical and transport studies, particularly those addressing quantum confinement of carriers and unusual electrical transport phenomena in this new class of materials.

scholarly journals Structural and Electrical Properties of Beryllium Implanted Silicon Carbide

1999 ◽  
Vol 572 ◽  
Author(s):  
T. Henkel ◽  
Y. Tanaka ◽  
N. Kobayashi ◽  
H. Tanoue ◽  
M. Gong ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Electrical Properties ◽  
Deep Level Transient Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Deep Level ◽  
Surface Region ◽  
Structural And Electrical Properties ◽  
Transient Spectroscopy ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTStructural and electrical properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering as well as deep level transient spectroscopy, resistivity and Hall measurements. Strong redistributions of the beryllium profiles have been found after a short post-implantation anneal cycle at temperatures between 1500 °C and 1700 °C. In particular, diffusion towards the surface has been observed which caused severe depletion of beryllium in the surface region. The crystalline state of the implanted material is well recovered already after annealing at 1450 °C. However, four deep levels induced by the implantation process have been detected by deep level transient spectroscopy.

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

2016 ◽  
Vol 858 ◽  
pp. 249-252 ◽  
Author(s):  
Sylvie Contreras ◽  
Leszek Konczewicz ◽  
Pawel Kwasnicki ◽  
Roxana Arvinte ◽  
Hervé Peyre ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Electrical Transport ◽  
Hole Concentration ◽  
Electrical Transport Properties ◽  
Capacitance Voltage ◽  
Experimental Values ◽  
Cv Measurements ◽  
P Type ◽  
Secondary Ion

In the range 80 K-900 K, we have investigated the electrical properties of heavily aluminum in-situ doped, 4H-SiC samples. The temperature dependence of the hole concentration and Hall mobility was analyzed in the model taking into account heavy and light holes. The modelisation parameters were compared with experimental values of Secondary Ion Mass Spectroscopy (SIMS) and Capacitance-Voltage (CV) measurements.

Effects of Ytterbium Addition on Liquid Phase Epitaxial Growth of InGaAs/InP Heterostructures

1993 ◽  
Vol 301 ◽  
Author(s):  
A. Davis ◽  
H.M. Dauplaise ◽  
J.P. Lorenzo ◽  
G.O. Ramseyer ◽  
J. A. Horrigan
Keyword(s):  
Liquid Phase ◽  
Deep Level ◽  
Double Crystal ◽  
Lattice Matching ◽  
Compensation Ratio ◽  
Order Of Magnitude ◽  
Liquid Phase Epitaxial Growth ◽  
Van Der Pauw ◽  
Secondary Ion

ABSTRACTWe have investigated the effects of Yb addition to melts used for the growth of InGaAs/InP heterostructures by liquid phase epitaxy. Our results indicate that impurities in the Yb play an important role in determining the changes in electrical properties observed in the epilayers after Yb treatment of the melt. We have examined samples using double-crystal x-ray diffractometry, photoluminescence, Hall/van der Pauw measurements, and secondary-ion mass spectroscopy. After Yb treatment, the residual carrier concentrations of the epilayers were reduced by more than one order of magnitude and the samples luminesced more strongly; while the lattice matching and crystal quality of the epilayers were not measurably affected by the Yb. There was a smaller-thanexpected ncrease in the 77K mobility and a marked increase in the compensation ratio of the epilayers grown after the addition of Yb to the melt. We believe the Yb is both acting as a scavenging agent in the melt, combining with impurities that otherwise would have been incorporated in the epilayers, and introducing deep level impurities of its own, which are incorporated into the grown layers.

Structural and electrical transport studies on CrN(001) thin films

2016 ◽  
Author(s):  
G. Venkat Swamy ◽  
Dinesh Kumar ◽  
R. K. Rakshit ◽  
G. A. Basheed ◽  
K. K. Maurya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Transport Studies
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