scholarly journals Electrical transport studies of quench condensed Bi films at the initial stage of film growth: A structural transition and the possible formation of electron droplets

2002 ◽  
Vol 65 (9) ◽  
Author(s):  
M. M. Rosario ◽  
Y. Liu
Keyword(s):  
Electrical Transport ◽  
Structural Transition ◽  
Film Growth ◽  
Transport Studies ◽  
Initial Stage

Initial stage of semiinsulating polycrystalline silicon film growth

2008 ◽  
Vol 37 (6) ◽  
pp. 349-355
Author(s):  
A. S. Turtsevich ◽  
O. Yu. Nalivaiko ◽  
V. A. Solodukha ◽  
V. V. Glukhmanchuk ◽  
N. G. Tsirkunova ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Film Growth ◽  
Silicon Film ◽  
Initial Stage ◽  
Polycrystalline Silicon Film

RHEED studies of initial stage of Ge film growth on (311)Si by gas source molecular beam epitaxy

1993 ◽  
Vol 128 (1-4) ◽  
pp. 319-326 ◽  
Author(s):  
Y. Yasuda ◽  
K. Itoh ◽  
N. Ohshima ◽  
Y. Koide ◽  
S. Zaima
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Film Growth ◽  
Gas Source ◽  
Initial Stage

Electrical transport properties of EuTe under high pressure

2021 ◽  
Author(s):  
Yuqiang Li ◽  
Jingxia Liu ◽  
Peiguang Zhang ◽  
Qiang Jing ◽  
Xiaofeng Liu ◽  
...  
Keyword(s):  
High Pressure ◽  
Optical Properties ◽  
Transport Properties ◽  
First Principles ◽  
Electrical Transport ◽  
Structural Transition ◽  
Electrical Transport Properties ◽  
Electronic And Optical Properties

The pressure-induced electronic and optical properties of EuTe are investigated up to 35.6 GPa. It is found that EuTe undergoes a pressure-induced NaCl-CsCl structural transition above 13 GPa by first-principles...

Electrical Transport Studies of Copper Mercuric Iodide

1983 ◽  
Vol 77 (1) ◽  
pp. 405-412 ◽  
Author(s):  
H. B. Lal ◽  
O. P. Srivastava
Keyword(s):  
Electrical Transport ◽  
Mercuric Iodide ◽  
Transport Studies

The initial stage of Pb thin film growth on Si(111) surface studied by TOF-ICISS

1996 ◽  
Vol 118 (1-4) ◽  
pp. 530-532
Author(s):  
Yasunori Tanaka ◽  
Hideki Morishita ◽  
Juang-Tak Ryu ◽  
Itsuo Katayama ◽  
Kenjiro Oura
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
Initial Stage

Initial Stage of para-Hexaphenyl Thin-Film Growth Controlled by the Step Structure of the Ion-Beam-Modified TiO2(110) Surface

2019 ◽  
Vol 123 (33) ◽  
pp. 20257-20269 ◽  
Author(s):  
K. Szajna ◽  
M. Kratzer ◽  
W. Belza ◽  
A. Hinaut ◽  
D. Wrana ◽  
...  
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Ion Beam ◽  
Thin Film Growth ◽  
Step Structure ◽  
Initial Stage

Ca2RuO4Thin Film Growth by Pulsed Laser Deposition

2004 ◽  
Vol 819 ◽  
Author(s):  
Xu Wang ◽  
Yan Xin ◽  
Hanoh Lee ◽  
Patricia A. Stampe ◽  
Robin J. Kennedy ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Film Growth ◽  
Pulsed Laser ◽  
High Sensitivity ◽  
Laser Deposition ◽  
Chemical Doping ◽  
Bulk Single Crystal ◽  
Electrical Transport Properties

AbstractBulk Ca2RuO4 is an antiferromagnetic Mott insulator with the metal-insulator transition above room temperature, and the Neel temperature at 113 K. There is strong coupling between crystal structures and magnetic, electronic phase transitions in this system. It exhibits high sensitivity to chemical doping and pressure that makes it very interesting material to study. We have epitaxially grown Ca2RuO4 thin films on LaAlO3 substrates by pulsed laser deposition technique. Growth conditions such as substrate temperature and O2 pressure were systematically varied in order to achieve high quality single-phase film. Crystalline quality and orientation of these films were characterized by X-ray diffractometry. Microstructure of the thin films was examined by transmission electron microscopy. The electrical transport properties were also measured and compared with bulk single crystal.

Fabrication and Characterization Studies of Semiconductor-Impregnated Porous Vycor Glass

1989 ◽  
Vol 164 ◽  
Author(s):  
C. A. Huber ◽  
T. E. Huber ◽  
A. P. Salzberg ◽  
J. A. Perez
Keyword(s):  
Electrical Transport ◽  
Quantum Confinement ◽  
Characteristic Size ◽  
Vycor Glass ◽  
New Class ◽  
Transport Studies ◽  
Porous Vycor Glass ◽  
Characterization Studies ◽  
Fabrication And Characterization ◽  
Interconnected Pores

AbstractPorous Vycor glass has been impregnated with semiconductors by pressure forcing the nonwetting semiconductor melt into the interconnected pores. Dense semiconductor mesh-like microstructures with a characteristic size of 50 Å can be fabricated by this technique. Measurements are reported which show the composites are suitable for both optical and transport studies, particularly those addressing quantum confinement of carriers and unusual electrical transport phenomena in this new class of materials.

Initial stage of cubic boron nitride film growth from vapor phase

1996 ◽  
Vol 79 (8) ◽  
pp. 4381 ◽  
Author(s):  
Takanori Ichiki ◽  
Satoshi Amagi ◽  
Toyonobu Yoshida
Keyword(s):  
Boron Nitride ◽  
Vapor Phase ◽  
Film Growth ◽  
Cubic Boron Nitride ◽  
Nitride Film ◽  
Initial Stage ◽  
Growth From Vapor
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