Structural and electrical transport studies on CrN(001) thin films

2016 ◽  
Author(s):  
G. Venkat Swamy ◽  
Dinesh Kumar ◽  
R. K. Rakshit ◽  
G. A. Basheed ◽  
K. K. Maurya ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Transport Studies

The optical and electrical transport studies of ZnxCo1−xS thin films

2016 ◽  
Vol 27 (12) ◽  
pp. 12302-12311 ◽  
Author(s):  
S. S. Kamble ◽  
A. Sikora ◽  
S. L. Deshmukh ◽  
S. T. Pawar ◽  
G. T. Chavan ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Transport Studies

Tin Oxide Based Transparent Ferromagnetic Semiconductor Thin Films by Spray Pyrolysis

2006 ◽  
Vol 962 ◽  
Author(s):  
Subhash Chand Kashyap ◽  
Kalon Gopinadhan ◽  
Sujeet Chaudhary ◽  
Dinesh K. Pandya
Keyword(s):  
Thin Films ◽  
Spray Pyrolysis ◽  
Electrical Transport ◽  
Spray Pyrolysis Technique ◽  
Room Temperature Ferromagnetism ◽  
Secondary Phases ◽  
Intrinsic Nature ◽  
Free Carriers ◽  
Transport Studies ◽  
Semiconductor Thin Films

ABSTRACTCobalt- and manganese-incorporated SnO2 thin films exhibiting room temperature ferromagnetism have been prepared by spray pyrolysis technique. Analysis of structural, magnetic and electrical properties of Sn1−xCoxO2−δ thin films indicates that the origin of ferromagnetism, seen for x<0.125, lies in the polarization of free carriers, leading to the necessary exchange interaction. The films exhibit a Curie temperature > 500K. The XRD study indicates that Sn1−xCoxO2−δ films with x<0.125 is single phasic with no evidence of any Co clusters or magnetic oxides, which supports the intrinsic nature of the ferromagnetism. The electrical transport studies indicate that extra electrons are generated on Co-incorporation in the SnO2 lattice. In the case of Sn1−xMnxO2·δ films, ferromagnetism is observed in a narrow range of manganese (0.075≤x≤0.10) with an associated increase in carrier concentration. The detailed analysis of various properties suggests that Mn-ions have been incorporated in the SnO2 lattice, and there is absence of any Mn-clusters, Mn-related secondary phases.

Large-scale Solution Processable Graphene-based Thin Film Devices

2012 ◽  
Vol 1407 ◽  
Author(s):  
Markus Pesonen ◽  
Himadri S. Majumdar ◽  
Jussi Kauppila ◽  
Jukka Lukkari ◽  
Ronald Österbacka
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Graphene Oxide ◽  
Electrical Transport ◽  
Large Scale ◽  
Atomic Force ◽  
Transport Studies ◽  
Reduced Graphene ◽  
Solution Processable ◽  
Thin Film Devices

ABSTRACTThe purpose of this work is to fabricate large-scale solution processable graphene-based films from graphene oxide (GO) solution and to characterize the transport properties of these films. The graphene like film is produced by annealing of the GO film to form reduced graphene oxide (rGO) thin films. The conductive rGO thin films are useable as spacer layers in spin valves and as organic electrodes. Atomic Force Microscope (AFM) characterizations on the film thickness and morphology have been carried out and simple electrical transport studies performed on spin coated rGO thin films. We have fabricated rGO thin films ranging from few to tens of nanometers in thickness with conductivities in the order of 1-100 S/m. We also show that the morphology of the films play an important role in facilitating higher conductivities for rGO thin films.

Optical transmittance and electrical transport investigations of Fe-doped In2O3 thin films

2021 ◽  
Vol 127 (5) ◽  
Author(s):  
Afroz Khan ◽  
F. Rahman ◽  
Razia Nongjai ◽  
K. Asokan
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Optical Transmittance

scholarly journals Electrical transport properties and Kondo effect in La1−xPrxNiO3−δ thin films

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Van Hien-Hoang ◽  
Nak-Kwan Chung ◽  
Heon-Jung Kim
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Kondo Effect ◽  
Magnetic Moments ◽  
Structural Disorder ◽  
Strongly Correlated ◽  
Electrical Transport Properties ◽  
Strongly Correlated Electron ◽  
Correlated Electron Systems ◽  
Correlated Electron

AbstractThe Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

scholarly journals 2D weak anti-localization in thin films of the topological semimetal Pd$$_{3}$$Bi$$_{2}$$S$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Shama ◽  
R. K. Gopal ◽  
Goutam Sheet ◽  
Yogesh Singh
Keyword(s):  
Thin Films ◽  
Phonon Scattering ◽  
Surface States ◽  
Relaxation Mechanism ◽  
Transport Studies ◽  
Bulk Carriers ◽  
Topological Semimetal ◽  
Topological Surface ◽  
First Time ◽  
Electron Phonon Scattering

AbstractPd$$_{3}$$ 3 Bi$$_{2}$$ 2 S$$_{2}$$ 2 (PBS) is a recently proposed topological semimetal candidate. However, evidence for topological surface states have not yet been revealed in transport measurements due to the large mobility of bulk carriers. We report the growth and magneto-transport studies of PBS thin films where the mobility of the bulk carriers is reduced by two orders of magnitude, revealing for the first time, contributions from the 2-dimensional (2D) topological surface states in the observation of the 2D weak anti-localization (WAL) effect in magnetic field and angle dependent conductivity measurements. The magnetotransport data is analysed within the 2D Hikami-Larkin-Nagaoka (HLN) theory. The analysis suggests that multiple conduction channels contribute to the transport. It is also found that the temperature dependence of the dephasing length can’t be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

Electrical transport of sprayed In2S3:Ag thin films

2020 ◽  
Vol 114 ◽  
pp. 105080 ◽  
Author(s):  
B. Tiss ◽  
N. Bouguila ◽  
M. Kraini ◽  
K. Khirouni ◽  
C. Vázquez–Vázquez ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport

Electrical transport and morphological study of PLD-grown nanostructured amorphous carbon thin films

2006 ◽  
Vol 17 (20) ◽  
pp. 5244-5247 ◽  
Author(s):  
K Mohan Kant ◽  
N Mahipal Reddy ◽  
N Rama ◽  
K Sethupathi ◽  
M S Ramachandra Rao
Keyword(s):  
Thin Films ◽  
Amorphous Carbon ◽  
Electrical Transport ◽  
Morphological Study ◽  
Carbon Thin Films
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