Erratum: “Deep level defects in n-type GaAsBi and GaAs grown at low temperatures” [J. Appl. Phys. 113, 133708 (2013)]

2015 ◽  
Vol 117 (1) ◽  
pp. 019901 ◽  
Author(s):  
P. M. Mooney ◽  
K. P. Watkins ◽  
Zenan Jiang ◽  
A. F. Basile ◽  
R. B. Lewis ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Deep Level

Hydrogen in Crystalline Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S. J. Pearton
Keyword(s):  
Low Temperatures ◽  
Atomic Hydrogen ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Surface Damage ◽  
Defect Complexes ◽  
Microscopic Models ◽  
Related Defect ◽  
Shallow Acceptors ◽  
Technological Interest

ABSTRACTThe ability of hydrogen to migrate in crystalline Si at low temperatures (<400°C) and bond to a variety of both shallow and deep level impurities, passivating their electrical activity, is of fundamental and technological interest. Recent results on the deactivation of the shallow acceptors in Si are compared with similar experiments in other semiconductors, microscopic models are proposed, and the implications for the states of hydrogen in the Si lattice at a variety of temperatures, and the diffusivity of some of these different states, is discussed. New results on the migration of atomic hydrogen under electronic stimulation are also detailed, along with a compendium of the deep levels in Si passivated by reaction with hydrogen. Surface damage by hydrogen-containing plasmas, and the infrared and electrical properties of H-related defect complexes are also reviewed.

Effect of Al Composition on the Deep Level Donors of AlxGa1-xSb/lnAs Single Quantum Wells

1992 ◽  
Vol 262 ◽  
Author(s):  
Irai Lo ◽  
W. C. Mitchel ◽  
C. E. Stutz ◽  
K. R. Evans ◽  
M. O. Manasreh
Keyword(s):  
Quantum Wells ◽  
Carrier Concentration ◽  
Electron Capture ◽  
Low Temperatures ◽  
Deep Level ◽  
Time Dependent ◽  
Universal Property ◽  
Persistent Photoconductivity ◽  
Single Quantum ◽  
Deep Donor

ABSTRACTWe have performed Shubnikov-de Haas (SdH) measurements on the AlxGa1-xSb/InAs QW's with x from 0.1 to 1.0 under the negative persistent photoconductivity (NPPC) conditions and confirmed the prediction of Ionized Deep Donor model that the NPPC effect is a universal property for the materials containing ionized deep donors at low temperatures. The time-dependent recombination (electron capture) of the ionized deep donors is similar to that of DX centers. The saturated reduction of carrier concentration in the InAs well increases with increasing x, and rises steeply at about x=0.4. The concentration of deep donors which cause the NPPC in the AlxGa1-xSb/InAs QW's increases with the Al composition.

Unusual Properties of the Red and Green Luminescence Bands in Ga-rich GaN

2004 ◽  
Vol 831 ◽  
Author(s):  
M. A. Reshchikov ◽  
H. Morkoç
Keyword(s):  
Low Temperatures ◽  
Molecular Beam ◽  
Deep Level ◽  
Shallow Donor ◽  
Time Resolved ◽  
Temperature Range ◽  
Peak Intensity ◽  
Integrated Intensity ◽  
Valence Bands ◽  
Increasing Temperature

ABSTRACTWe studied photoluminescence (PL) from deep-level defects in GaN grown under Garich conditions at relatively low temperatures (700–800°C) by molecular-beam epitaxy (MBE). The dominant features of PL spectrum are red and green bands peaking respectively at ∼1.8 and ∼2.35 eV. Both PL bands decay exponentially at low temperatures (15 – 100 K) after pulsed excitation. The characteristic lifetime for the red band decreases by almost two orders of magnitude from 110 to 2 μs with increasing temperature from 15 to 100 K, while its integrated intensity after each pulse remains nearly unchanged in the same temperature range due to an increase in the peak intensity in the time-resolved PL curve. The lifetime of the green band remained unchanged in this temperature range. We suggest that these PL bands are caused by transitions between excited and ground states of some deep defects rather than transitions involving a shallow donor, conduction or valence bands.

Investigation of Deep Interface Traps in Very-Thin Oxide/Si Structures Prepared at Low Temperatures Using Chemical Solutions

2009 ◽  
Vol 609 ◽  
pp. 123-127
Author(s):  
Jaroslav Rusnák ◽  
Michal Ružinský ◽  
Kentaro Imamura ◽  
Taketoshi Matsumoto ◽  
Miloslav Štefečka ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Low Voltage ◽  
Deep Level ◽  
Interface Properties ◽  
Voltage Step ◽  
Chemical Solutions ◽  
Thin Oxide ◽  
Transient Spectroscopy ◽  
Labview Platform ◽  
Mos Structures

An advanced equipment for the charge version of deep level transient spectroscopy (Q-DLTS) and C-V measurements with newly developed software on LabView platform is presented. The ability to record several Q-DLTS behaviors with different rate windows simultaneously is the most important property of the equipment. Q-DLTS with excitation of the MOS structures by low-voltage step and time domain C-V measurements were used to determine interface properties. The contribution presents mainly results obtained on very-thin oxide/n-type crystalline Si structures prepared by oxidation at very low temperatures in nitric acid solutions with various concentrations.

HYDROGEN IN CRYSTALLINE SEMICONDUCTORS: PART I—SILICON

1994 ◽  
Vol 08 (09) ◽  
pp. 1093-1158 ◽  
Author(s):  
S.J. PEARTON
Keyword(s):  
Vapor Deposition ◽  
Low Temperatures ◽  
Molecular Beam ◽  
Hydrogen Diffusion ◽  
Deep Level ◽  
Chemical Vapor ◽  
Device Fabrication ◽  
Device Operation ◽  
Diffusion Profiles

Hydrogen plays an important role in the properties of Si because of its ability to passivate the electrical activity of shallow dopants and deep level impurities. This passivation can occur during virtually every stage of crystal growth, device fabrication or device operation due to the rapid diffusivity of hydrogen at low temperatures and the fact that it is a component of virtually every gas or liquid that comes in contact with Si. We review the ability of hydrogen to form neutral complexes with dopants and impurities, give examples of hydrogen diffusion profiles in doped and undoped Si, and mention the role of hydrogen during chemical vapor deposition and molecular beam epitaxy of Si.

Comparative Study of Electronically Controlled Motion of Hydrogen around Carbon and Platinum Atoms in Silicon

2004 ◽  
Vol 813 ◽  
Author(s):  
Yoichi Kamiura ◽  
Namula Bao ◽  
Kimihiro Sato ◽  
Kazuhisa Fukuda ◽  
Yasuyuki Iwagami ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reverse Effect ◽  
Local Motion ◽  
Subsequent Recovery ◽  
Controlled Motion ◽  
Transient Spectroscopy ◽  
C Complex ◽  
Uniaxial Compressive Stress

ABSTRACTWe have studied the local motion of hydrogen in the neighborhood of carbon and platinum impurities by observing the stress-induced reorientation and subsequent recovery of two H-related (H-C and Pt-H2) complexes in Si, using deep-level transient spectroscopy (DLTS) under uniaxial compressive stress. We notice two interesting differences in hydrogen motion around carbon and platinum atoms. The first one is a difference in the temperature where stress-induced reorientation occurs. That of the H-C complex occurs at high temperatures above 250 K, while it occurs at low temperatures around 80 K for the Pt-H2 complex. The second difference is the effect of charge state of the complexes on their stress-induced reorientation and subsequent recovery. It occurs preferentially when an electron occupies the level of the H-C complex, but the Pt- H2 complex has the reverse effect of level occupancy. These differences are discussed from viewpoint of different atomic configurations and electronic states of two H-related complexes.

Deep level defects in n-type GaAsBi and GaAs grown at low temperatures

2013 ◽  
Vol 113 (13) ◽  
pp. 133708 ◽  
Author(s):  
P. M. Mooney ◽  
K. P. Watkins ◽  
Zenan Jiang ◽  
A. F. Basile ◽  
R. B. Lewis ◽  
...  
Keyword(s):  
Low Temperatures ◽  
Deep Level

Interpretation of irradiation-induced changes in electron diffractograms and images of extinction contours at low temperatures

1984 ◽  
Vol 42 ◽  
pp. 268-269
Author(s):  
E. Knapek ◽  
H. Formanek ◽  
G. Lefranc ◽  
I. Dietrich
Keyword(s):  
Low Temperatures ◽  
Carbon Films ◽  
Organic Crystals ◽  
Wide Spread ◽  
Lens System ◽  
Preparation Conditions ◽  
Thin Carbon ◽  
Electron Diffractograms ◽  
Diffraction Patterns ◽  
Induced Changes

A few years ago results on cryoprotection of L-valine were reported, where the values of the critical fluence De i.e, the electron exposure which decreases the intensity of the diffraction reflections by a factor e, amounted to the order of 2000 + 1000 e/nm2. In the meantime a discrepancy arose, since several groups published De values between 100 e/nm2 and 1200 e/nm2 /1 - 4/. This disagreement and particularly the wide spread of the results induced us to investigate more thoroughly the behaviour of organic crystals at very low temperatures during electron irradiation.For this purpose large L-valine crystals with homogenuous thickness were deposited on holey carbon films, thin carbon films or Au-coated holey carbon films. These specimens were cooled down to nearly liquid helium temperature in an electron microscope with a superconducting lens system and irradiated with 200 keU-electrons. The progress of radiation damage under different preparation conditions has been observed with series of electron diffraction patterns and direct images of extinction contours.

Radiation Damage of Support Films

1981 ◽  
Vol 39 ◽  
pp. 28-29
Author(s):  
H.A. Cohen ◽  
W. Chiu
Keyword(s):  
Transfer Function ◽  
Low Temperatures ◽  
Carbon Support ◽  
Contrast Transfer Function ◽  
Electron Dose ◽  
Imaging Parameters ◽  
Negative Stain ◽  
Phase Corrections ◽  
Two Parameters ◽  
Medium Dose

The goal of imaging the finest detail possible in biological specimens leads to contradictory requirements for the choice of an electron dose. The dose should be as low as possible to minimize object damage, yet as high as possible to optimize image statistics. For specimens that are protected by low temperatures or for which the low resolution associated with negative stain is acceptable, the first condition may be partially relaxed, allowing the use of (for example) 6 to 10 e/Å2. However, this medium dose is marginal for obtaining the contrast transfer function (CTF) of the microscope, which is necessary to allow phase corrections to the image. We have explored two parameters that affect the CTF under medium dose conditions.Figure 1 displays the CTF for carbon (C, row 1) and triafol plus carbon (T+C, row 2). For any column, the images to which the CTF correspond were from a carbon covered hole (C) and the adjacent triafol plus carbon support film (T+C), both recorded on the same micrograph; therefore the imaging parameters of defocus, illumination angle, and electron statistics were identical.

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