The Role of Carbon and Point Defects in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
U. Gösele
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Carbon Concentration ◽  
Diffusion Mechanism ◽  
Intrinsic Point Defect ◽  
Interstitial Carbon ◽  
Frame Work ◽  
Co Precipitation ◽  
And Diffusion

ABSTRACTAn overview of the behavior of intrinsic point defects in silicon and their interaction with carbon is given for temperatures above about 500° C. The diffusive mechanism of carbon in silicon, which involves silicon self-interstitials, is treated in some detail and compared with the diffusion mechanism of oxygen. The solubility of interstitial carbon is estimated. Co-precipitation of carbon and self-interstitials or oxygen are dealt with in terms of simple volume considerations. It is proposed that the contradicting results on the influence of intrinsic point defect supersaturations on oxygen nucleation and precipitation may possibly be explained in the frame-work of opposite effects depending on the carbon concentration. Finally the influence of carbon on the incorporation and diffusion of gold in silicon is discussed.

Diffusivity and Diffusion Mechanism of Oxygen in Silicon

1985 ◽  
Vol 59 ◽  
Author(s):  
S.-Tong Lee ◽  
D. Nichols
Keyword(s):  
Mass Spectrometry ◽  
Point Defect ◽  
Point Defects ◽  
Oxygen Diffusion ◽  
Secondary Ion Mass Spectrometry ◽  
Diffusion Mechanism ◽  
Processing Conditions ◽  
Float Zone ◽  
And Diffusion ◽  
Secondary Ion

ABSTRACTThe diffusivities of oxygen in Czochralski Si (CZ-Si) and float-zone Si (FZ-Si) have been measured by using secondary ion mass spectrometry. The diffusivity at 700–1160°C deduced from the outdiffused profiles of oxygen incorporated in CZ-Si shows little or no dependence on processing conditions and can be expressed as D = 0.14 exp(−2.53 eV/kT) cm2/s. Diffusivity at 700–1100°C of oxygen implanted in FZ-Si is insensitive to doses and follows D = 0.13 exp(−2.50 eV/kT) cm2/s, which agrees remarkably well with CZ-Si data. Since large variations in point-defect concentrations existed under the conditions studied, the excellent agreement among the diffusivities leads to the conclusion that point defects in Si have little effect on oxygen diffusion. This demonstrates that oxygen diffuses primarily via an interstitial mechanism in the temperature range studied.

Simulation of Atomic Structure and Diffusion Characteristics of Point Defects in BCC and FCC Metals

2011 ◽  
Vol 172-174 ◽  
pp. 1222-1227 ◽  
Author(s):  
Irina Valikova ◽  
Andrei V. Nazarov
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Atomic Structure ◽  
Recent Model ◽  
Diffusion Mobility ◽  
Effect Of Pressure ◽  
Fcc Metals ◽  
Diffusion Characteristics ◽  
Temperature Dependences ◽  
And Diffusion

Our recent model has been used to evaluate the point defect characteristics including those determining the effect of pressure on the concentration of vacancies, di-vacancies, interstitials and their diffusion mobility in set of BCC and FCC metals. Our model has been developed to calculate temperature dependences of mentioned features. In contrast to other studies, the vacancy migration volumes have been found for all the metals studied.

Point Defects, Diffusion Mechanisms, and the Shrinkage and Growth of Extended Defects in Silicon

1980 ◽  
Vol 2 ◽  
Author(s):  
Ulrich Gösele ◽  
Werner Frank
Keyword(s):  
Point Defects ◽  
Thermal Equilibrium ◽  
Diffusion Mechanism ◽  
Extended Defects ◽  
Basic Point ◽  
Kinetics Of Oxidation ◽  
Diffusion Phenomena ◽  
Frame Work ◽  
Oxygen Precipitates ◽  
Kinetics Of

ABSTRACTThe paper introduces the basic point-defect models proposed for silicon, which involve either vacancies or self-interstitials only, or both types of point defects simultaneously under thermal-equilibrium conditions. The growth and shrinkage kinetics of oxidation-induced stacking faults as well as oxidation-enhanced or -retarded diffusion phenomena are discussed within the frame work of these models. Whereas no unambiguous conclusions on the dominant diffusion mechanism can be drawn from the available oxidation-related experiments, recent investigations on so-called anomalous diffusion phenomena (e.g., the ‘emitter-push effect’) and on the diffusion of gold in silicon demonstrate Si self-interstitials to be the point defects governing self- and impurity diffusion. The possibility of a coexistence of vacancies and self-interstitials in thermal equilibrium is discussed in this context. The paper concludes with speculations on how carbon in conjunction with self-interstitials may influence the nucleation process of oxygen precipitates in silicon.

Point Defect Thermodynamics of Compound Semiconductors and their Alloys

1982 ◽  
Vol 14 ◽  
Author(s):  
F. A. Kröger
Keyword(s):  
Physical Properties ◽  
Point Defect ◽  
Phase Diagrams ◽  
Point Defects ◽  
Compound Semiconductors ◽  
Defect Chemistry ◽  
Ternary Compounds ◽  
Partial Pressures ◽  
Binary Compounds

ABSTRACTThe physical properties of crystalline solids depend on the presence of point defects. The concentrations of these defects in turn depend on the conditions of preparation and the presence of dopants. Quantitative relations between these conditions (partial pressures of components, concentrations of dopants, temperature) and the defect concentrations is arrived at on the basis of defect chemistry. Examples of pure and doped binary compounds, alloys of binary compounds, and ternary compounds, are given. Whereas binary compounds have one composition variable, the alloy systems and the ternary compounds have two. The role of phase diagrams in preparing systems of required composition and properties is stressed.

Fermi-Level Effect, Electric Field Effect, and Diffusion Mechanisms in GaAs Based III-V Compound Semiconductors

1998 ◽  
Vol 527 ◽  
Author(s):  
T. Y. Tan ◽  
C.-H. Chen ◽  
U. Gösele ◽  
R. Scholz
Keyword(s):  
Electric Field ◽  
Fermi Level ◽  
Point Defects ◽  
Field Effect ◽  
Pressure Effect ◽  
Electric Field Effect ◽  
Diffusion Mechanisms ◽  
And Diffusion ◽  
Level Effect

ABSTRACTDiffusion mechanisms and point defects in GaAs and related III-V compounds are discussed. An understanding of the As sublattice situation has been arrived at fairly recently and is presently tentative. Understanding of the Ga sublattice situation has become more acceptable in that experimental results are consistently explained by the Fermi-level effect and the As4 pressure effect. On the Ga sublattice, though controversies still exist, some are readily resolved by noting the role of the electric field produced by semiconductor electrical junctions, physical junctions, and surfaces.

Point Defects and Diffusion in Nonstoichiometric Metal Oxides

MRS Bulletin ◽  
1991 ◽  
Vol 16 (12) ◽  
pp. 27-32 ◽  
Author(s):  
Rüdiger Dieckmann
Keyword(s):  
Metal Oxides ◽  
Grain Boundaries ◽  
Point Defect ◽  
Point Defects ◽  
Defect Structure ◽  
Ionic Crystals ◽  
Ion Diffusion ◽  
Crystalline Materials ◽  
And Diffusion ◽  
Point Defect Structure

This article briefly reviews the relationships between point defects and ion diffusion in nonstoichiometric ionic crystals, with special emphasis on cubic oxides. It focuses on crystalline materials with negligibly small concentrations of nonequilibrium defects such as dislocations and grain boundaries. First, the concepts used to analyze the point defect structure and the diffusion of ions in nonstoichiometric crystals will be discussed. Then, specific oxides will be considered as examples. These oxides are manganosite, Mn1−ΔO, and spinels of the type Me3−δO4 with Fe and Mn cations, respectively.

scholarly journals Thermodynamic model for lattice point defect-mediated semi-coherent precipitation in alloys

2021 ◽  
Vol 2 (1) ◽  
Author(s):  
Maylise Nastar ◽  
Lisa T. Belkacemi ◽  
Estelle Meslin ◽  
Marie Loyer-Prost
Keyword(s):  
Phase Diagram ◽  
Phase Transformations ◽  
Point Defect ◽  
Point Defects ◽  
Lattice Point ◽  
Parent Phase ◽  
Equilibrium Phase ◽  
Precipitation Kinetic ◽  
Coherent Phase

AbstractThe formation of precipitates with an atomic volume different from their parent phase eventually leads to a loss of the lattice continuity at the matrix–precipitate interface. Here, we show the creation or removal of lattice sites mediated by lattice point defects is an accommodation mechanism of the coherency loss and even a precipitation driving force. We introduce a thermodynamic approach that rationalizes the selection of phases resulting from chemical and crystallographic constraints in relation to point defect properties. The resulting semi-coherent phase diagram and the precipitation kinetic model depend on the equilibrium phase diagram, the eigenstrain of the precipitating phase, and the chemical potential of point defects. From a joint experimental and modeling study, we uncover the prominent role of excess point defects in unforeseen phase transformations of the Fe–Ni metallic system under irradiation. By addressing the fundamental role of lattice point defects in the accommodation mechanisms of precipitation, we provide a step torwards the understanding of semi-coherent phase transformations occurring in solid materials upon synthesis and in use.

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