Studies of Oxygen Thermal Donor Formation Under Stress

1985 ◽  
Vol 59 ◽  
Author(s):  
Paul W. Wang ◽  
James W. Corbett
Keyword(s):  
Formation Rate ◽  
Heat Treatments ◽  
Bending Stress ◽  
Resistivity Measurements ◽  
Thermal Donor ◽  
Donor Formation ◽  
Pre Treatment ◽  
P Type

ABSTRACTOxygen thermal donor formation under stress and following various pre-heat treatments was investigated by resistivity measurements. Thermal donor formation at 450°C, with and without bending stress, is monitored in p-type Cz-silicon following various heat-treatments. As has been shown by others, the thermal donor formation rate depends upon the pre-treatment of the samples. We find that the rate also depends on the stress, being faster, or slower, on the tensile side than on the compressed side depending on the pre-treatment.

The Influence of Low-Energy Argon Implantation and Out-Diffusion Heat Treatments on Hydrogen Enhanced Thermal Donor Formation in P-Type Czochralski Silicon

1999 ◽  
Vol 69-70 ◽  
pp. 409-416 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
A.N. Petlitskii ◽  
Reinhart Job ◽  
Wolfgang R. Fahrner ◽  
A.K. Fedotov ◽  
...  
Keyword(s):  
Heat Treatments ◽  
Low Energy ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Low-Temperature Doping of P-Type Czochralski Silicon due to Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 57-58 ◽  
pp. 189-196 ◽  
Author(s):  
Alexander G. Ulyashin ◽  
Yu.A. Bumay ◽  
Reinhart Job ◽  
G. Grabosch ◽  
D. Borchert ◽  
...  
Keyword(s):  
Low Temperature ◽  
Hydrogen Plasma ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

Oxygen Gettering and Thermal Donor Formation at Post-Implantation Annealing of Hydrogen Implanted Czochralski Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
A. G. Ulyashin ◽  
Yu. A. Bumay ◽  
W. R. Fahrner ◽  
A. I. Ivanovo ◽  
R. Job ◽  
...  
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Hydrogen Ions ◽  
Enhanced Diffusion ◽  
Thermal Donor ◽  
Float Zone ◽  
Donor Formation ◽  
Effect Of Oxygen ◽  
P Type ◽  
Secondary Ion ◽  
Post Implantation

ABSTRACTThe effect of oxygen gettering by buried defect layers at post-implantation annealing of hydrogen implanted Czochralski (Cz) grown silicon has been investigated. Hydrogen ions were implanted with an energy of 180 keV and doses of 2.7.1016cm−2 into p-type Cz and for comparison into p-type float zone (Fz) Si. The samples were annealed at temperatures between 400 °C and 1200 °C in a forming gas ambient and examined by secondary ion mass spectrometry (SIMS) in order to measure the hydrogen and oxygen concentration profiles. Spreading resistance probe (SRP) measurements were used to obtain depth resolved profiles of the resistivity. The observed changes of the resistivity after post-implantation annealing of hydrogen implanted Cz and Fz Si can be explained by hydrogen enhanced thermal donor formation processes (oxygen or hydrogen related) and charges at the SiOx precipitates. The effective oxygen gettering in hydrogen implanted Cz silicon is attributed to hydrogen enhanced diffusion of oxygen to buried defect layers.

Rapid Low Temperature Diode Fabrication on P-Type Czochralski Silicon on the Base of Simple Hydrogen Enhanced Thermal Donor Formation Processes

1999 ◽  
Vol 69-70 ◽  
pp. 551-556 ◽  
Author(s):  
Reinhart Job ◽  
J.A. Weima ◽  
G. Grabosch ◽  
D. Borchert ◽  
Wolfgang R. Fahrner ◽  
...  
Keyword(s):  
Low Temperature ◽  
Formation Processes ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type

The Conversion of Czochralski Silicon from P-Type to N-Type by Hydrogen Plasma Enhanced Thermal Donor Formation

1997 ◽  
Vol 469 ◽  
Author(s):  
R. Job ◽  
D. Borchert ◽  
Y. A. Bumay ◽  
W. R. Fahrner ◽  
G. Grabosch ◽  
...  
Keyword(s):  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Capacitance Voltage ◽  
Junction Formation ◽  
One Step ◽  
Donor Formation ◽  
The One ◽  
P Type

ABSTRACTOur experiments show a hydrogen plasma assisted creation of p-n junctions in p-type Cz silicon due to a hydrogen enhanced thermal donor (TD) formation at temperatures ≤450 °C. Applying DC or HF plasma treatments a conversion of p-type into n-type Cz silicon by TD formation occurs. One can distinguish one step processes (p-n junction formation appears just after the plasma exposure) and two step processes (p-n junction formation requires subsequent post hydrogenation annealing). The samples are studied by depth resolved spreading resistance probe (SRP), capacitance-voltage (CV) and Hall measurements. For the one step processes a kinetic model for hydrogen enhanced TD formation is presented.

Hydrogen redistribution and enhanced thermal donor formation at post implantation annealing of p-type hydrogen implanted Czochralski silicon

1999 ◽  
Vol 58 (1-2) ◽  
pp. 91-94 ◽  
Author(s):  
A.G. Ulyashin ◽  
A.I. Ivanov ◽  
I.A. Khorunzhii ◽  
R. Job ◽  
W.R. Fahrner ◽  
...  
Keyword(s):  
Czochralski Silicon ◽  
Thermal Donor ◽  
Donor Formation ◽  
P Type ◽  
Post Implantation

P-N Junction Diodes Fabricated Based on Donor Formation in Plasma Hydrogenated P-Type Czochralski Silicon

2005 ◽  
Vol 864 ◽  
Author(s):  
Y. L. Huang ◽  
E. Simoen ◽  
R. Job ◽  
C. Claeys ◽  
W. Düngen ◽  
...  
Keyword(s):  
Deep Level ◽  
Hydrogen Plasma ◽  
Plasma Exposure ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Current Voltage ◽  
Donor Formation ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
P Type

AbstractA rather large amount of shallow donors is created in p-type Czochralski silicon (Cz Si) wafers after a hydrogen plasma exposure at ∼270 °C (substrate temperature) and a subsequent annealing in the temperature range of 350-450 °C. This two-step process has been used for the fabrication p-n junction diodes at low temperatures. Current-voltage characteristics show that the breakdown voltages of these diodes are higher than 100 V. The diode leakage is found to be improved after slow ramp annealing at temperatures up to 250 °C. Deep level transient spectroscopy measurements reveal that the oxygen related thermal donor is not the dominant doping species as expected before.

A Two-Step Low-Temperature Process For A P-N Junction Formation Due To Hydrogen Enhanced Thermal Donor Formation In P-Type Czochralski Silicon

1998 ◽  
Vol 513 ◽  
Author(s):  
R. Job ◽  
W. R. Fahrner ◽  
N. M. Kazuchits ◽  
A. G. Ulyashin
Keyword(s):  
Hydrogen Diffusion ◽  
Induced Current ◽  
Junction Depth ◽  
Type Region ◽  
Czochralski Silicon ◽  
Thermal Donor ◽  
Junction Formation ◽  
Donor Formation ◽  
P Type ◽  
Low Temperature Process

ABSTRACTThe incorporation of hydrogen into standard p-type Czochralski (Cz) silicon (≥1 Ωcm) by a 110 MHz plasma treatment at 260°C leads to the formation of an n-type region due to hydrogen enhanced thermal donor (TD) formation in hydrogenated regions of the wafer, if a subsequent annealing in air is applied at 450°C. Spreading resistance probe (SRP) and light beam induced current (LBIC) measurements were used for the experimental analysis. The p-n junction depth, i. e. the counter doping by TDs, depends on the initial doping level of the p-type substrate, and therefore on the post-hydrogenation annealing time. The penetration of the n-type region into the wafer bulk is driven by a rapid hydrogen diffusion. The essential process for a TD generation is the creation of metastable hydrogen molecular species around 260°C and their decay at 450°C.

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