Low Temperature Photoluminescence and Photoinduced Current Spectroscopy on CdZnTe Grown by High-Pressure Bridgman Technique

1999 ◽  
Vol 588 ◽  
Author(s):  
A. Zerrai ◽  
K. Cherkaoui ◽  
S. Mergui ◽  
A. Zumbiehl ◽  
M. Hage-Ali ◽  
...  
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Luminescence Band ◽  
Thermoelectric Effect ◽  
Bridgman Technique ◽  
Edge Luminescence ◽  
Broad Luminescence Band ◽  
Resistivity Model ◽  
Low Temperature Photoluminescence

AbstractLow temperature photoluminescence (PL), photoinduced current spectroscopy (PICTS) and thermoelectric effect spectroscopy (TEES) measurements have been carried out on several CdZnTe samples, taken from the same ingot, grown by the High Pressure Bridgman Technique. The PL bandgap edge luminescence allowed us to study the quality of the CdZnTe material. We have also determined the zinc segregation through the ingot. A broad luminescence band at lower energies was observed and correlated with PICTS results. The behavior of the defects through the ingot was studied by PICTS. Finally, these results are used to implement the resistivity model.

The Effect of Ge Segregation on Oxidation of Si

1987 ◽  
Vol 105 ◽  
Author(s):  
E. C. Frey ◽  
N. R. Parikh ◽  
M. L. Swanson ◽  
M. Z. Numan ◽  
W. K. Chu
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Epitaxial Layer ◽  
Atmospheric Pressure ◽  
Oxidation Rate ◽  
Oxidation Temperature ◽  
Pressure Oxidation ◽  
Enhanced Oxidation ◽  
High Pressure Oxidation

AbstractWe have studied oxidation of various Si samples including: Ge implanted Si, CVD and MBE grown Si(0.4–4% Ge) alloys, and MBE grown Si-Si(Ge) superlattices. The samples were oxidized in pyrogenic steam (800–1000°C, atmospheric pressure) and at low temperature and high pressure (740°C, 205 atm of dry O2). The oxidized samples were analyzed with RBS/channeling and ellipsometry.An enhanced oxidation rate was seen for all Ge doped samples, compared with rates for pure Si. The magnitude of the enhancement increased with decreasing oxidation temperature. For steam oxidations the Ge was segregated from the oxide and formed an epitaxial layer at the Si-SiO2 interface; the quality of the epitaxy was highest for the highest oxidation temperatures. For high pressure oxidation the Ge was trapped in the oxide and the greatest enhancement in oxidation rate (>100%) was observed.

OPTICAL PROPERTIES OF ANATASE TiO2 UNDER THE HIGH PRESSURE

2001 ◽  
Vol 15 (28n30) ◽  
pp. 3952-3955 ◽  
Author(s):  
TAKAO SEKIYA ◽  
SHINSUKE OHTA ◽  
SUSUMU KURITA
Keyword(s):  
Phase Transition ◽  
High Pressure ◽  
Optical Properties ◽  
Lower Energy ◽  
Luminescence Band ◽  
High Pressures ◽  
Anatase Tio2 ◽  
Broad Luminescence Band ◽  
Pressure Phase ◽  
Energy Side

Optical absorption, luminescence and Raman spectra were measured for anatase TiO 2 under high pressures. The pressure dependence of Raman frequencies is determined. The absorption edge of anatase shifts to higher energy side with increasing pressure and the edge jumps abruptly to lower energy side on the phase transition. A broad luminescence band of anatase shifts also to higher energy side with increasing pressure. These experimental results reveal that the pressure-induced phase transition from anatase to high-pressure phase arises in the range of 4.0-4.6 GPa.

Optical Properties of Doped Cd1−xMnxTe

1986 ◽  
Vol 89 ◽  
Author(s):  
Y. Lansari ◽  
N. C. Giles ◽  
J. F. Schetzina ◽  
P. Becia ◽  
D. Kaiser
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Spectral Range ◽  
Room Temperature ◽  
Far Infrared ◽  
Optical Quality ◽  
Structural Quality ◽  
Reflectance Measurements ◽  
Low Temperature Photoluminescence

AbstractThe introduction of phosphorus and arsenic dopants into bulk Cd1−xMnx Te crystals grown by the Bridgman-Stockbarger technique has been studieA-with respect to the resulting optical properties. Samples with a Mn composition in the range 0.10 < x < 0.30, both as-grown and annealed, were investigated. A combination of room temperature transmittance and reflectance measurements over the spectral range from the ultraviolet to the far infrared has been used to gain information concerning the structural quality of the samples. Low temperature photoluminescence measurements (1.6−5 K) were used to determine optical quality and excitonic energies.

Growth of Large Diameter SiC Crystals by Advanced Physical Vapor Transport

2005 ◽  
Vol 483-485 ◽  
pp. 9-12 ◽  
Author(s):  
Thomas Anderson ◽  
Donovan L. Barrett ◽  
J. Chen ◽  
Ejiro Emorhokpor ◽  
A. Gupta ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Low Temperature ◽  
Nitrogen Doping ◽  
Large Diameter ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Insulating Properties ◽  
Low Temperature Photoluminescence

Semi-insulating 6H SiC substrates, 2”, 3” and 100mm in diameter, and n+ 4H SiC substrates, 2” and 3” in diameter, are grown at II-VI using the Advanced Physical Vapor Transport (APVT) technique [1]. The process utilizes high-purity SiC source and employs special measures aimed at the reduction of background contamination. Semi-insulating properties are achieved by precise vanadium compensation, which yields substrates with stable and uniform electrical resistivity reaching ~ 1011 Ω-cm and higher. Conductive n+ 4H SiC crystals with the spatially uniform resistivity of 0.02 W-cm are grown using nitrogen doping. Crystal quality of the substrates, their electrical properties and low temperature photoluminescence are discussed.

Photoluminescence Characterization of Thin Silicon-On-Insulator Films Produced by Oxygen Implantation

1987 ◽  
Vol 107 ◽  
Author(s):  
J. Weber ◽  
H. Baumgart ◽  
J. Petruzzello ◽  
G.K. Celler
Keyword(s):  
Low Temperature ◽  
Single Crystal Silicon ◽  
Silicon On Insulator ◽  
Crystal Silicon ◽  
Czochralski Silicon ◽  
Transmission Electron ◽  
Processing Step ◽  
Low Temperature Photoluminescence

AbstractSingle crystal silicon films on top of a buried SiO2 layer were produced by implanting 1.7x10180+ions/cm2 at 150keV into (100) Czochralski silicon, followed by annealing at higher temperatures. The defect properties of the layers are studied after each processing step by low temperature photoluminescence measurements and transmission electron micrography (TEM). Dislocation-related photoluminescence signals correlate with their TEM observations in the same samples. The photoluminescence method proves to be a very versatile and convenient method for characterizing the quality of silicon-on-insulat or structures.

LOW TEMPERATURE PHOTOLUMINESCENCE AND ABSORPTION OF GaxIn1-xAs/ InP

1982 ◽  
Vol 43 (C5) ◽  
pp. C5-383-C5-392 ◽  
Author(s):  
K. H. Goetz ◽  
A. V. Solomonov ◽  
D. Bimberg ◽  
H. Jürgensen ◽  
M. Razeghi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Low Temperature Photoluminescence

Improving of quality of gate assembly contact surfaces of high-pressure fi ttings by diamond burnishing

2020 ◽  
pp. 99-104
Author(s):  
S.A. Zaydes ◽  
A.N. Mashukov ◽  
T.Ya. Druzhinina
Keyword(s):  
Surface Roughness ◽  
High Pressure ◽  
Main Part ◽  
Conical Surface ◽  
The Real ◽  
Metal Seal ◽  
Diamond Burnishing ◽  
Air Tightness ◽  
Contact Surfaces

The contact belt of the gate assembly is the main part of high pressure fittings. The serviceability of the fittings assembly as whole depends on the air-tightness and quality of the mating surfaces. The technology of diamond burnishing allows to increase the interface of the nodes by red ucing the surface roughness of the metal-to-metal seal. The real experience for improving of the fittings contact belt due to the use of diamond burnishing of the nozzles seats and the conical surface of the rods.

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